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Wyszukujesz frazę "61.72.Dd" wg kryterium: Temat


Tytuł:
Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure
Autorzy:
Leszczyński, M.
Grzegory, I.
Bockowski, M.
Jun, J.
Porowski, S.
Jasiński, J.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1933847.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
61.50.Cj
Opis:
Gallium nitride bulk crystals grown at about 15 kbar and 1500 K have been examined by using the high resolution X-ray diffractometry. An analysis of a set of the rocking curves of various Bragg reflections enabled us to estimate a dislocation density. For the crystals of dimensions lower than about 1 mm it is lower than 10$\text{}^{-5}$ cm$\text{}^{-2}$. For bigger samples the crystallographic quality worsens. With an application of the reciprocal lattice mapping we could distinguish between internal strains and mosaicity which are both present in these crystals The results for the bulk crystals are compared with those for epitaxial layers.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 799-802
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Perfection Study of Crystals Containing Micro- and Macrodistortions by X-Ray Acoustic Method
Autorzy:
Khrupa, V. I.
Grigoryev, D. O.
Dzyublik, A. Ya.
Powiązania:
https://bibliotekanauki.pl/articles/1931662.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
61.72.Dd
Opis:
The X-ray acoustic method for determination the structure perfection integral characteristics is suggested for slightly imperfect dislocation-free crystals. The method is suitable for investigation of a crystal disturbed both by localized (microdefects) and by distributed (macrostrains) structure defects. It is based on the analysis of dependence of the distance Δx between two minima, arising in the spatial intensity profile I(x) of the X-ray beam diffracted by acoustically excited crystal, upon ultrasound frequency vs. Using the data Δx(v$\text{}_{s}$) for two selected reflections, we calculated the values of the extinction lengths Λ which enabled us to identify the predominate type of structure disturbances as well as to estimate the static Debye-Waller factors e$\text{}^{-L}$ and the period of the main macrodeformation λ$\text{}_{M}$ for a sample containing simultaneously microdefects and periodic long range deformations. Such approach was used for studying the structure perfection of Czochralski-grown (Cz) and float-zone (FZ) silicon crystals.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 597-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystalline microstructure of corundum fillers determined from powder X-ray diffraction patterns
Autorzy:
Kojdecki, M.
Bastida, J.
De la Torre, F.
Pardo, P.
Ibáńez, R.
Urquiola, M.
Powiązania:
https://bibliotekanauki.pl/articles/1112654.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Je
61.72.Dd
Opis:
X-ray-diffraction microstructural analysis was performed for corundum powders produced from Bayer aluminium hydroxides in different ways and for high purity corundum powders produced from other raw materials. Crystalline microstructure characterised by prevalent crystallite shape, volume-weighted crystallite size distribution and second-order crystalline lattice strain distribution was determined through modelling crystallite shapes as hexagonal prisms, with the resulting mean volume-weighted standardised crystallite size in the range 406-1941 Å, height-to-base-diagonal ratio in the range 0.68-0.94 and the mean-absolute second-order strain in the range 0.028-0.087%. Crystallite size distributions were found to be well approximated as bimodal logarithmic-normal ones and consequently four types of microstructure were recognized as depending on precursors and methods of production.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1000-1003
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray diffraction microstructural analysis of swelling by ethylene glycol in two reference clay minerals
Autorzy:
García Tomás, F.
Kojdecki, M.
Pardo, P.
Ibańez, R.
Álvarez Larena, A.
Bastida, J.
Powiązania:
https://bibliotekanauki.pl/articles/1152823.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Vj
61.72.Dd
Opis:
Kaolinite and montmorillonite are two clay minerals with different structures: dioctahedral 1:1 without layer charge and dioctahedral 2:1 with low layer charge. X-ray-diffraction microstructural analysis of two fractions of two reference clays (with kaolinite or montmorillonite) from the Clay Minerals Society Source Clay Repository were performed by the Voigt function method to provide microstructural data not available in the baseline studies of this Repository. A rough agreement was found between crystallite sizes determined from X-ray diffraction patterns and from images by field-emission scanning electron microscopy. In addition, the influence of swelling by ethylene-glycol on crystallite size was studied by the mentioned method. Two factors were found to affect the crystallite size variation in ethylene-glycol-treated clay minerals: (i) the increase of the unit cell in [001] direction due to the interlayer absorption of ethylene glycol molecules in the case of swelling minerals and (ii) the physisorption at the surfaces of the crystallites. Both effects operate in the case of montmorillonite, whereas just the latter one is expected in kaolinite.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 876-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources
Autorzy:
Paszkowicz, W.
Górecka, J.
Domagała, J.
Dmitruk, N.
Varshava, S. S.
Härtwig, J.
Ohler, M.
Pietraszko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1964165.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
68.70.+w
Opis:
GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 997-1002
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Analysis of the TE Mode Cerenkov Type Second Harmonic Generation in Ion-Implanted X-Cut Lithium Niobate Planar Waveguides
Autorzy:
Du, G.
Li, G.
Zhao, S.
Qiao, W.
Yang, K.
An, J.
Li, M.
Wang, J.
Wang, W.
Powiązania:
https://bibliotekanauki.pl/articles/1808109.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
42.82.Et
Opis:
We present a study of the Cerenkov configuration second harmonic generation in X-cut ion-implanted lithium niobate waveguides. An approximate solution of conversion efficiency is given and plotted which shows that it is very sensitive to the waveguide depth and pump wavelength. The results can be used in the design of waveguides for the efficient second harmonic generation in the Cerenkov configuration.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 685-689
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays
Autorzy:
Janavičius, A. J.
Storasta, J.
Purlys, R.
Mekys, A.
Balakauskas, S.
Norgėla, Ž.
Powiązania:
https://bibliotekanauki.pl/articles/2047360.pdf
Data publikacji:
2007-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.Dd
05.50.+q
Opis:
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.
Źródło:
Acta Physica Polonica A; 2007, 112, 1; 55-68
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays
Autorzy:
Janavičius, A. J.
Purlys, R
Norgėla, Ž
Powiązania:
https://bibliotekanauki.pl/articles/2044634.pdf
Data publikacji:
2006-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
61.72.Dd
05.50.+q
Opis:
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
Źródło:
Acta Physica Polonica A; 2006, 109, 2; 159-170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Perfection Diagnostics of Single Crystals by Means of Diffractometry Measurements Using X-Ray Continuous Spectrum
Autorzy:
Datsenko, L. I.
Khrupa, V. I.
Powiązania:
https://bibliotekanauki.pl/articles/1931659.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Bi
81.40.-z
61.72.Dd
Opis:
Determination of the integral characteristics of structural perfection of a real crystal (i.e. Debye-Waller's static factor e$\text{}^{-L}$ and coefficient of absorption lids due to diffuse scattering) is especially expedient using the suitably selected wavelengths of the X-ray continuous spectrum by investigation of the thickness I(t), coordinate I(x) as well as amplitude I(W) dependencies of intensities at Lane or Bragg diffraction. Here W is an amplitude of weak ultrasound vibrations excited in a sample for suppression of the Bragg component of reflectivity.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 579-584
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
Autorzy:
Tokarczyk, M.
Kowalski, G.
Grodecki, K.
Urban, J.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399073.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.Gh
61.72.Dd
63.22.Rc
Opis:
Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as $d_{002}$ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 768-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment
Autorzy:
Tokarczyk, M.
Kowalski, G.
Witowski, A.
Koziński, R.
Librant, K.
Aksienionek, M.
Lipińska, L
Ciepielewski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1195411.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.Gh
61.72.Dd
63.22.Rc
Opis:
"Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1190-1194
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique
Autorzy:
Kowalski, G.
Gronkowski, J.
Borowski, J.
Hruban, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812250.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
07.85.Jy
81.10.Fq
Opis:
New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 391-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microstructure Analysis of Nanocrystalline Powders by X-ray Diffraction
Autorzy:
Louër, D.
Audebrand, N.
Powiązania:
https://bibliotekanauki.pl/articles/2035450.pdf
Data publikacji:
2002-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Dp
61.10.Nz
61.46.+w
61.72.Dd
61.72.Lk
61.72.Mm
Opis:
The use of X-ray diffraction line profile analysis for the study of nanocrystalline powders is described. The fundamentals of the theory are presented in terms of crystallite/domain size, size distribution, lattice distortion, dislocation density and stacking faults. Line profile parameters and the methods of pattern fitting introduced to overcome the diffraction-line overlap problem are described. The approaches based of the integral breadth of the measured line profiles and the Fourier method are discussed. In addition, simplified approaches are also commented. Representative examples are selected to illustrate various cases of microstructure, such as nanomaterials with strain-free spherical nanocrystallites, strain-free crystallites with anisotropic crystallite shape, anisotropic crystallites with microstrains and spherical crystallites with dislocation densities and crystallite size distributions.
Źródło:
Acta Physica Polonica A; 2002, 102, 1; 45-56
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Barcz, A.
Bak-Misiuk, J.
Chow, L.
Vanfleet, R.
Prujszczyk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504150.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
61.72.uf
64.75.Qr
66.30.Xj
81.40.Xj
Opis:
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 196-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Superconductivity in Highly Cr-Doped GaP Single Crystals
Autorzy:
Gosk, J. B.
Strzelecka, G.
Kowalski, G.
Hruban, A.
Kamińska, M.
Twardowski, A.
Gronkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046913.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.10.+v
75.50.Pp
61.72.Vv
61.72.Dd
81.10.Dn
Opis:
Studying bulk GaP, highly doped with Cr, and searching for possible ferromagnetic semiconductor in view of spintronic applications, we found superconducting behavior of this material unexpectedly. Magnetization techniques and X-ray diffraction were applied to study these crystals. Magnetization revealed superconducting features up to about 6 K and X-ray studies showed that superconductivity might be related to small size Cr precipitates.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 189-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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