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Tytuł:
Fabrication and Characterization of Porous Silicon
Autorzy:
Duaa, Jabbar Hussein
Alzubaidy, Muneer H. Jaduaa
Abd, Ahmed N.
Powiązania:
https://bibliotekanauki.pl/articles/1157178.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Anodization
Nanocrystalline porous silicon
XRD
porous silicon
Opis:
In this work, nanocrystalline porous silicon layers were fabricated by photoelectrochemical etching of n type silicon (n-Si) wafer. Different etching time (15, 20, 25 and 30) min and 10 mA/cm2 current density were tested to study their effect on the formation nanosized pore array. Porous silicon is investigation by X-Ray diffractions (XRD) and atomic force microscopy properties (AFM). Crystallites size was estimated by X-Ray diffraction. Atomic Force microscopy confirmed the nonmetric size Chemical Anodization the electrochemical etching was noticed of PS. The atomic force microscopy investigation showed the rough silicon surface which increased with etching time porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
Źródło:
World Scientific News; 2018, 94, 2; 321-328
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Porous silicon: fabrication, characterization and photoelectronic applications
Autorzy:
Shuihab, Aliyah A.
Khalf, Surour A.
Powiązania:
https://bibliotekanauki.pl/articles/1177955.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Anodization
FTIR & AFM
Nanocrystalline porous silicon
XRD
porosity
porous silicon
Opis:
In this paper, the nanocrystalline porous silicon (PS) films are prepared by electrochemical etching of p-type silicon wafer with current density (15 mA/cm2) and etching times on the formation nanosized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nano scale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a -Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
Źródło:
World Scientific News; 2018, 97; 264-273
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photocurrent and Photovoltaic of Photodetector based on Porous Silicon
Autorzy:
Hadi, Hasan A.
Powiązania:
https://bibliotekanauki.pl/articles/1178373.pdf
Data publikacji:
2017
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
ECE
PC
PDH
Photovoltaic
Porous Silicon
Opis:
We have studied the dependence of photodetector photocurrent on incident power density of light with anodization current and time. The fabrication of Al/PS/p-Si photodetector heterojunction PDH by electrochemical etching method ECE and semi-transparent Al films in thickness range of 80 nm are deposited by thermal evaporation on porous silicon layers to investigate the photocurrent -voltage characteristics of the PDH. When the anodization current varied from 20 to 60 mA, the photocurrent PC was increase according to the anodization parameters at 1.2 mw/cm2 power density. The results also show that the short current Isc and open circuit voltage Voc saturate at high power density. The difference in the value of Voc and Isc at different etching current density is related to the Si nano crystallites layer thickness and the porosity which itself is greatly affected by the etching current density.
Źródło:
World Scientific News; 2017, 77, 2; 314-325
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Adsorption properties of porous silicon
Autorzy:
Domański, K.
Grabiec, P.
Gotszalk, T.
Beck, R.B.
Dębski, T.
Rangelow, I.W.
Powiązania:
https://bibliotekanauki.pl/articles/308412.pdf
Data publikacji:
2001
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
porous silicon
cantilever beam
gas sensor
Opis:
Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive device is given by micromechanical structure. In this paper we report on the piezoresistive cantilever beam structure with porous silicon adsorbing spot as a gas sensor.
Źródło:
Journal of Telecommunications and Information Technology; 2001, 1; 53-56
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Effect Etching Time on Structure Properties of Nano-Crystalline p-type Silicon
Autorzy:
Hadi, H. A.
Powiązania:
https://bibliotekanauki.pl/articles/412165.pdf
Data publikacji:
2014
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Porous Silicon
Electrochemical Etching
ECE
XRD
AFM
Opis:
This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 327-333
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon
Autorzy:
Hadi, Hasan A.
Abood, Tareq H.
Mohi, Ali T.
Karim, Mahmood S.
Powiązania:
https://bibliotekanauki.pl/articles/1178661.pdf
Data publikacji:
2017
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
electrochemical etching
heterojunction
porous silicon
thin films
Opis:
In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
Źródło:
World Scientific News; 2017, 67, 2; 149-160
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier modification of Al/PS/c-Si Schottky contact based on porous silicon interfacial layer
Autorzy:
Hadi, Hasan A.
Powiązania:
https://bibliotekanauki.pl/articles/1178052.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Norde method
Porous silicon
Schottky barrier height
electrochemical etching
Opis:
This paper presents the fabrication and characterization of the different types of porous silicon PS (n-type and p-type) were used as a semiconductor to modifying Schottky contacts (Al/p-PS, Al/n-PS) and ohmic contact (Al/p-Si, Al/n-Si) respectively. Porous layer formed by electrochemical and photo-electrochemical etching. Barrier height, ideal factor, series resistance, are carefully figured out and compared with (I-V, C-V) measurements, H(I) and F(V) equations. The ideally factor was very high and the value of the Schottky barrier height of p-type sample was larger than that of n-type for all methods were use in this study. Also, higher series resistance for Al/PS/p-Si Schottky diode as compared to Al/PS/n-Si Schottky diode while the junction exhibits strong rectifying characteristics for n-type as compared of p-type.
Źródło:
World Scientific News; 2018, 95; 89-99
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution
Autorzy:
Hadi, H.A.
Ismail, R.A.
Habubi, N.F.
Powiązania:
https://bibliotekanauki.pl/articles/412262.pdf
Data publikacji:
2013
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
porous silicon
photo-electrochemical etching (PECE)
porosity
thickness
XRD
AFM
Opis:
Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer's formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77 %. The thickness of the layer formed during an anodization in constant current was 3.54nm in gravimetric method, while its value was 1.77nm by using the theoretical relation.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2013, 3; 29-36
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metoda otrzymywania monokrystalicznych folii krzemowych z wykorzystaniem krzemu porowatego
A method of obtaining monocrystalline silicon foils using porous silicon
Autorzy:
Sarnecki, J.
Brzozowski, A.
Lipiński, D.
Powiązania:
https://bibliotekanauki.pl/articles/192437.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
warstwa epitaksjalna
krzem porowaty
CVD
folia krzemowa
epitaxial layer
porous silicon
silicon foil
Opis:
Określono warunki i opracowano metodę otrzymywania folii krzemowych o grubości do ~ 100 μm i wymiarach 50 x 50 mm. Metoda ta polega na odrywaniu warstw epitaksjalnych osadzanych na porowatej powierzchni płytki krzemowej typu p+. Opracowano oryginalną metodę odrywania warstwy epitaksjalnej łączącą działanie obniżonego ciśnienia i kąpieli w gorącej wodzie.
A method of obtaining silicon foil with the thickness of up to 100 μm and dimensions 50 x 50 mm was worked out and experimental conditions were determined. This technique consists in the separation of epitaxial layers deposited on the porous surface of the p+ silicon wafer. Such an original method of epitaxial layer separation, combining the effect of low pressure and a bath in hot water, was developed.
Źródło:
Materiały Elektroniczne; 2014, T. 42, nr 1, 1; 24-31
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical model to determine the Porosity and refractive index of porous silicon type-n by using Atomic force microscope
Autorzy:
Abdulridha, Wasna'a M.
Abd, Ahmed N.
Dawood, Mohammed O.
Powiązania:
https://bibliotekanauki.pl/articles/1193012.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Atomic Force Microscope
Porous silicon
n-PS
porosity
refractive index
thickness
Opis:
Porous silicon (PS) layer was produced by photochemical etching process at (5, 7, 10, 12 and 15) etching time and 7 mA/cm2 current density then after investigation by Atomic Force Microscope (AFM) the thickness of PS layer from about 3.4 µm to 15.8 µm was determined. The surface of porous silicon is formed from small pyramids with porous structure, where the porosity of n-PS is from ≈ (32-72%). Porous silicon layer formed on the silicon substrates by photochemical etching contains also the nanopores with diameter about (16.41-42) nm in current density (7mA/cm2). The porosity and thickness was determined from AFM results and compared with the result from the usually measured porosity and thickness through a gravimetric method we found that the values of porosity and thickness calculated from two methods are approximately similar to each other with few difference, the influence of structure changes on optical properties such as refractive index, which decreases exponentially with porosity.
Źródło:
World Scientific News; 2016, 28; 29-40
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Desorption/ionization on silicon for small molecules: a promising alternative to MALDI TOF.
Autorzy:
Kraj, Agnieszka
Dylag, Tomasz
Gorecka-Drzazga, Anna
Bargiel, Sylwester
Dziuban, Jan
Silberring, Jerzy
Powiązania:
https://bibliotekanauki.pl/articles/1043452.pdf
Data publikacji:
2003
Wydawca:
Polskie Towarzystwo Biochemiczne
Tematy:
proteomics
porous silicon
catecholamines
peptides
DIOS
mass spectrometry
desorption/ionization
MALDI TOF
Opis:
A method has been developed for laser desorption/ionization of catecholamines from porous silicon. This methodology is particularly attractive for analysis of small molecules. MALDI TOF mass spectrometry, although a very sensitive technique, utilizes matrices that need to be mixed with the sample prior to their analysis. Each matrix produces its own background, particularly in the low-molecular mass region. Therefore, detection and identification of molecules below 400 Da can be difficult. Desorption/ionization of samples deposited on porous silicon does not require addition of a matrix, thus, spectra in the low-molecular mass region can be clearly readable. Here, we describe a method for the analysis of catecholamines. While MALDI TOF is superior for proteomics/peptidomics, desorption/ionization from porous silicon can extend the operating range of a mass spectrometer for studies on metabolomics (small organic molecules and their metabolites, such as chemical neurotransmitters, prostaglandins, steroids, etc.).
Źródło:
Acta Biochimica Polonica; 2003, 50, 3; 783-787
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Krzemowe warstwy epitaksjalne do zastosowań fotowoltaicznych osadzane na krzemie porowatym
Silicon epitaxial layers deposited on porous silicon for photovoltaic applications
Autorzy:
Lipiński, D.
Sarnecki, J.
Brzozowski, A.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/192080.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
warstwa epitaksjalna
CVD
krzem porowaty
ogniwo słoneczne
epitaxial layer
porous silicon
solar cell
Opis:
Ustalono warunki wytwarzania warstw o odpowiedniej porowatości zapewniającej osadzanie w procesie epitaksji z fazy gazowej warstw krzemowych o grubości powyżej 50 μm. W zależności od rezystywności płytek krzemowych typu p+ o orientacji <111> oraz <100> określono związek między gęstością prądu trawienia elektrochemicznego, a porowatością wytworzonych warstw porowatych. Otrzymano warstwy porowate z porowatością w zakresie 5 % - 70 %. Ustalono parametry procesu epitaksji i osadzono krzemowe warstwy epitaksjalne o wysokiej perfekcji strukturalnej i zakładanych parametrach elektrycznych.
The conditions for producing layers with proper porosity that allows epitaxial growth of Si layers with the thickness of about 50 μm have been established. The relationship between the layer porosity, current density and substrate resistivity has been determined. The layers with porosity in the range between 5 % and 70 % have been obtained. The parameters of the CVD process have been established. Epitaxial silicon layers of high structural perfection and required electrical parameters have been obtained, which has been confirmed by the XRD and SR measurements as well as SEM observations.
Źródło:
Materiały Elektroniczne; 2012, T. 40, nr 3, 3; 28-37
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
Autorzy:
Abd, Ahmad Naji
Mishjil, Khudheir A.
Abdulsada, Ali Hamid
Habubi, N. F.
Powiązania:
https://bibliotekanauki.pl/articles/1177996.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
AFM
FTIR
TiO2
X-Ray diffraction
XRD
electrochemical etching p-type silicon wafer
nanocrystalline porous silicon
Opis:
In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
Źródło:
World Scientific News; 2018, 96; 134-148
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction
Autorzy:
Hadi, H. A.
Powiązania:
https://bibliotekanauki.pl/articles/411926.pdf
Data publikacji:
2014
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
porous silicon
electrochemical etching
spray pyrolysis
fluoride-doped tin oxide film
nanostructures
SEM
AFM
photodetector
Opis:
In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2 : F for film was deduced. From (I-V) and (C-V) measurements, the barrier ØB height for FTO/PS diode was of 0.77, and the built in voltage Vbi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 2; 142-152
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cancer therapeutics strategy using nano-carrier mediated natural drugs
Autorzy:
Shaw, S.
Singh, P.
Mishra, R.
Singh, R.
Nayak, R.
Bose, S.
Powiązania:
https://bibliotekanauki.pl/articles/2201053.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
Tematy:
breast cancer
porous silicon nanocarrier
quercetin
nucleolin
targeted therapy
rak piersi
krzem porowaty
nanonośniki
kwercetyna
terapia celowana
Opis:
Purpose Nucleolin is a multifactorial protein, having a significant role in chromatin remodelling, mRNA stability, ribosome biogenesis, stemness, angiogenesis, etc., thus, it is potential therapeutic target in cancer. The purpose of this paper is to study porous silicon (pSi) nanocarrier-based natural drug delivery system targeting dysregulated nucleolin expression for cancer therapeutics. Design/methodology/approach Quercetin was loaded in pre-synthesized and characterized pSi nanoparticles, and release kinetics was studied. The study compared the inhibitory concentration (IC50) of quercetin, synthetic drug doxorubicin, and quercetin-loaded pSi nanoparticles. Further, mRNA expression of a target gene, nucleolin, was tested with a quercetin treated breast cancer cell line (MCF-7). Findings Quercetin-loaded pSi nanoparticles followed first-order release kinetics. IC50 was determined at concentrations of 312 nM, 160 µM, and 50 µM against doxorubicin, quercetin, and quercetin-loaded pSi nanoparticles, respectively. The results further indicated 16-fold downregulation of nucleolin mRNA expression after 48h of quercetin treatment of exponentially growing MCF-7 cells. Research limitations/implications Whether pSi nanoparticle loaded quercetin can significantly downregulate nucleolin protein expression and its impact on apoptosis, cell proliferation, and angiogenic pathways need further investigation. Practical implications The practical application of the proposed nanocarrier-based drug delivery system potentially lays out a path for developing targeted therapy against nucleolin-dysregulated cancer using natural products to minimize the side effects of conventional chemotherapeutic drugs. Originality/value Inhibition of nucleolin and nucleolin regulated pathways using natural compounds and its targeted delivery with nanocarrier is not yet done.
Źródło:
Journal of Achievements in Materials and Manufacturing Engineering; 2022, 114, 1; 32--41
1734-8412
Pojawia się w:
Journal of Achievements in Materials and Manufacturing Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
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