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    Wyświetlanie 1-6 z 6
    Tytuł:
    Large-Signal RF Modeling with the EKV3 MOSFET Model
    Autorzy:
    Chalkiadaki, M. A.
    Buchar, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308061.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    compact model
    EKV3 model
    large-signal
    load-pull
    MOSFET model
    radio frequency
    Opis:
    This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 29-33
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    BSIM3v3 to EKV2.6 Model Parameter Extraction and Optimisation using LM Algorithm on 0.18μ Technology node
    Autorzy:
    Singh, K.
    Jain, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/226194.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    EKV2.6
    BSIM3v3
    specific current IS
    optimisation
    LM algorithm
    Opis:
    The industry standard BSIM3v3 and BSIM4.0 have been replaced by BSIM6.0 compact MOSFET model for deep submicron technology node. The BSIM6.0 is next generation, defacto industry standard model for bulk MOSFET. This model is charge based which is continuous from weak to strong inversion of operation. The core of analytical and physical BSIM6 model[3] is charge, with drain current equation expressed in form of source(qs) and drain charge(qd). This model has all its governing equations continuous and can be used to develop design methodology using IC based approach. But its method of computing qs and qd is complicated which is different from Vittoz traditional charge calculation method. The continuous interpolation equation of drain current as adopted by EKV2.6 although is empirical but its compact expression is preferred by analog designer to get intuitive design guidance. BSIM6 is a combined effort by BSIM and EKV modeling groups based on charge based continuous equations. Although EKV2.6 model is not valid for deep submicron process as it only includes submicron short channel effects like velocity saturation (VS), vertical field mobility reduction (VFMR), Drain induced barrier lowering (DIBL), channel length modulation (CLM) etc. But it still offers some benefits to have first cut design methodology because of its much simplified analytical equations. The inversion coefficient (IC) has found extensive acceptance in designer community as it offers enhanced design elegance in EKV then more complicated BSIM model. This paper discuses first step in analog design process by extracted core EKV2.6 intrinsic model parameters from industry standard BSIM3v3 model on 0.18μ technology node. The 0.18μ technology is chosen as it is still more common technology node in analog circuit design. The model parameters are extracted for different bins and optimisation is done using nonlinear optimisation LM algorithm. The optimised EKV2.6 parameters are validated with current-voltage (I-V), intrinsic voltage gain (Avi) and Early voltage circuit parameter (VA) with BSIM3v3 model.
    Źródło:
    International Journal of Electronics and Telecommunications; 2018, 64, 1; 5-11
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Adaptive EPFL-EKV Long and Short Channel MOS Device Models for Qucs, SPICE and Modelica Circuit Simulation
    Autorzy:
    Brinson, M. E.
    Nabijou, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/398007.pdf
    Data publikacji:
    2012
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    model adaptacyjny MOS
    Qucs
    SPICE
    Modelica
    monitoring parametru
    adaptive MOS models
    equation-defined device modelling
    Verilog-A
    EPFL-EKV MOS-FET model
    parameter and equation monitoring
    EPFL-EKV MOS-FET
    Opis:
    Equation-defined non-linear functional elements are important building blocks in the development of compact semiconductor device models. Current trends in compact device modelling suggest widespread acceptance among the modeling community of Verilog-A, for semiconductor device specification, model exchange and circuit simulation. This paper outlines techniques for the development of adaptive EPFL-EKV long and short channel MOS models which stress user selectable model features and diagnostic capabilities. Adaptive EPFL-EKV nMOS models based on Verilog-A and Modelica are introduced and their performance compared with simulation data obtained using the "Quite universal circuit simulator" (Qucs), SPICE and the Modelica simulation environment.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2012, 3, 1; 1-6
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultra Low Power Design for Digital CMOS Circuits Operating Near Threshold
    Autorzy:
    Kalra, S.
    Bhattacharyya, A. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/226500.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    energy efficiency
    ultra-low power
    EKV
    minimum energy point
    minimum delay point temperature to time generator
    Opis:
    Circuits operating in the subthreshold region are synonymous to low energy operation. However, the penalty in performance is colossal. In this paper, we investigate how designing in moderate inversion region recuperates some of that lost performance, while remaining very near to the minimum energy point. An α power based minimum energy delay modeling that is continuous over the weak, moderate, and strong inversion regions is presented. The value of α is obtained through interpolation following EKV model. The effect of supply voltage and device sizing on the minimum energy and performance is determined. The proposed model is utilized to design a temperature to time generator at 32nm technology node as the application of the proposed model. The abstract goes here.
    Źródło:
    International Journal of Electronics and Telecommunications; 2017, 63, 4; 369-374
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advanced compact modeling of the deep submicron technologies
    Autorzy:
    Grabiński, W.
    Bucher, M.
    Sallese, J.-M.
    Krummenacher, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/309312.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra deep submicron (UDSM) technology
    compact modeling
    EKV MOS transistor model
    MOSFET
    matching
    low power
    RF applications
    Opis:
    The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 žm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model
    Źródło:
    Journal of Telecommunications and Information Technology; 2000, 3-4; 31-42
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An accurate prediction of high-frequency circuit behaviour
    Autorzy:
    Yoshitomi, S.
    Kimijima, H.
    Kojima, K.
    Kokatsu, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/308807.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    electro-magnetic simulation
    SPICE
    circuit test structure
    RF CMOS
    EKV2.6-MOS model
    spiral inductor
    CMOS VCO
    Opis:
    An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 47-62
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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