Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "wide gap semiconductors" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-3 z 3
    Tytuł:
    Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments
    Autorzy:
    Procek, M.
    Pustelny, T.
    Stolarczyk, A.
    Maciak, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/201073.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    zinc oxide
    ZnO
    flower-like nanostructures
    gas sensor
    wide gap semiconductors
    electric properties of semiconductors
    tlenek cynku
    kwiatopodobne nanostruktury
    czujnik gazu
    właściwości elektryczne półprzewodników
    Opis:
    The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200◦C.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 4; 635-639
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Kamińska, E.
    Wojciechowski, T.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/220412.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Wide band gap oxide semiconductors
    ZnO
    integrated optics structures
    planar waveguides
    Opis:
    The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 401-412
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics
    Autorzy:
    Kondrath, N.
    Kazimierczuk, M. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/226774.pdf
    Data publikacji:
    2010
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    silicon carbide (SiC)
    SiC properties
    high voltage
    high-temperature
    high-frequency applications
    high-temperature electronics
    wide energy band-gap semiconductors
    Opis:
    Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.
    Źródło:
    International Journal of Electronics and Telecommunications; 2010, 56, 3; 231-236
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies