Temat: threshold current - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers
Autorzy:: Pruszyńska-Karbownik, Emilia
Gębski, Marcin
Marciniak, Magdalena
Lott, James A.
Czyszanowski, Tomasz
Powiązania:: https://bibliotekanauki.pl/articles/174774.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: VCSEL
vertical-cavity surface-emitting laser
threshold current
spontaneous emission
Opis:: In this paper, we present experimental results of spontaneous emission clamping in the threshold for vertical-cavity surface-emitting lasers (VCSELs) with oxide current confinement. We show that the spontaneous emission not wholly clamps in the threshold. We propose a new method for determining the threshold current value using the study of the clamping phenomena. This method has an advantage over the commonly used methods in the accuracy because the current of the spontaneous emission clamping is betted defined than the current of the slope change of the stimulated emission light-current curve. The estimated uncertainty of the method is no more than 20 μA.
Źródło:: Optica Applicata; 2020, 50, 2; 281-288
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime
Autorzy:: Osthaug, J.
Fjeldly, T.A.
Iniguez, B.
Powiązania:: https://bibliotekanauki.pl/articles/308041.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: sub-100 nm MOSFET
two-dimensional device modeling
conformal mapping
threshold voltage
subthreshold regime
leakage current
Opis:: Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 70-79
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: A 65 nm CMOS Resistorless Current Reference Source with Low Sensitivity to PVT Variations
Autorzy:: Łukaszewicz, M.
Borejko, T.
Pleskacz, W. A.
Powiązania:: https://bibliotekanauki.pl/articles/397920.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: efekt objętościowy
obwody zasilające
napięcie progowe
current reference
65 nm CMOS
body effect
power supply circuits
threshold voltage
Opis:: This paper describes a resistorless current reference source, e.g. for fast communication interfaces. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 59 ppm/°C temperature coefficient over range of -40°C to 125°C. Reference current susceptibility to process parameters variation is ± 2.88%. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -142 dB and -131 dB, respectively.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 4; 119-124
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: Evaluation of current density on the surface of the left atrium during TAS
Autorzy:: Prochaczek, F.
Galecka, J.
Sikora, M.
Glasek, J.
Powiązania:: https://bibliotekanauki.pl/articles/333257.pdf
Data publikacji:: 2013
Wydawca:: Uniwersytet Śląski. Wydział Informatyki i Nauki o Materiałach. Instytut Informatyki. Zakład Systemów Komputerowych
Tematy:: transesophageal atrial stimulation
TAS
current density
atrial pacing threshold
selective electrodes
omnidirectional electrodes
przezprzełykowa stymulacja przedsionków
wartość progowa stymulacji przedsionkowej
elektrody selektywne
elektrody dookólne
Opis:: Conditions for the indirect transesophageal atrial stimulation (TAS), useful for cardiac diagnosis and treatment, are optimized both by way of clinical experiment and a computer modelling. The paper demonstrates the results of comparison of electric current density, obtained on the surface of the left atrium during computer modelling, with the results of our own experiments. An evaluation was made with the use of spiral CT scanning of the distance between the esophagus and the posterior wall of the left atrium. The average distance in the tested group of 27 subjects was 4.7 ±σ = 1.1 mm. During transesophageal stimulation, we have determined the average excitation threshold of the left atrium, obtaining the value 5.5 ±σ = 1.8 mA in the examined group of 27 patients. The calculated average current density on the surface of left atrium for the selective electrode with point poles used in the experiment amounted to 39.6 μA/mm2. Electric current densities obtained by other researchers by means of computer modelling for omnidirectional and selective ring electrodes turned out to be much lower after adjustment to similar conditions, which was the result of electrically active larger sizes surfaces of the poles of electrodes used in the modelling.
Źródło:: Journal of Medical Informatics & Technologies; 2013, 22; 243-249
1642-6037
Pojawia się w:: Journal of Medical Informatics & Technologies
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "threshold current" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język