Temat: thin films’ bismuth oxide - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Structural and optical properties of nanostructured bismuth oxide
Autorzy:: Ali, R. S.
Powiązania:: https://bibliotekanauki.pl/articles/412556.pdf
Data publikacji:: 2014
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: thin films’ bismuth oxide
optical properties
structural properties
Opis:: Thin films of bismuth oxide have been prepared utilizing vacuum evaporation. XRD anyalysis reveal that all the films were tetragonal polycrystalline structure with a preferred orientation along (002) plane. SEM images indicate that the grain size fall in the category of nanosize. AFM results assure that the nanonstructure behavior of thin films. Optical studies show that these films have a direct transition with optical energy gap equal to 2.5 eV.
Źródło:: International Letters of Chemistry, Physics and Astronomy; 2014, 15; 64-72
2299-3843
Pojawia się w:: International Letters of Chemistry, Physics and Astronomy
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Morphology and Structure of the Erbium Stabilized Bismuth Oxide Thin Films Deposited by PLD Technique
Autorzy:: Kąc, S.
Szwachta, G.
Cieniek, Ł.
Moskalewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/356362.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: Pulsed Laser Deposition
thin films
bismuth oxide
surface topography
Opis:: The aim of the work was to obtain thin bismuth oxide films containing, at room temperature, the Bi_1,5Er_0,5O₃ phase. This phase corresponds to the structure of the high-temperature δ-Bi₂O₃ phase, in pure bismuth oxide, characterized by the highest ionic conductivity of all known solid state ionic conductors. The high-temperature δ-Bi₂O₃ phase with the face centered cubic structure, in pure bismuth oxide, occurs only at temperature above 730°C. Stabilization of the δ-Bi₂O₃ phase at room temperature was achieved by an addition of the erbium together with the employ-ment of the Pulsed Laser Deposition (PLD) technique. The influence of an amount of Er alloying and the film thickness on surface morphology, microstructure, phase composition of thin films were investigated. The velocity of deposition of thin layers of bismuth stabilized with erbium in the PLD process using the Nd: YAG laser was about 0.5 nm/s.The investigation results of erbium doped bismuth oxide thin films deposited onto (0001) oriented Al₂O₃ monocrystalline substrate are presented. Thin films of uniform thickness, without cracks, and porosity were obtained. All deposited thin films (regardless of the film thickness or erbia (Er₂O₃) content) exhibited a columnar structure. In films stabilized with erbium, up to approx. 250 nm thickness, the columns have a diameter at the base from 25 to 75 nm. The columns densely and tightly fill the entire volume of the films. With increasing of the film thickness increases, porosity also significantly increases. In thin layers containing from 20 to 30 mole % Er₂O₃ the main identified phase at room temperature is Bi_1,5Er_0,5O₃. It is similar to the defective fluorite-type structure, and belongs to the Fm-3m space group. This phase corresponds to the structure of the high-temperature δ-Bi₂O₃ phase in pure bismuth oxide.
Źródło:: Archives of Metallurgy and Materials; 2019, 64, 3; 969-974
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "thin films’ bismuth oxide" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język