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    Tytuł:
    Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis
    Autorzy:
    Lee, Yong-Kwan
    Sim, Jae-Jin
    Byeon, Jong-Soo
    Lee, Yong-Tak
    Cho, Yeong-Woo
    Kim, Hyun-Chul
    Heo, Sung-Gue
    Lee, Kee-Ahn
    Seo, Seok-Jun
    Park, Kyoung-Tae
    Powiązania:
    https://bibliotekanauki.pl/articles/2049150.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    tantalum
    self-propagating high-temperature synthesis
    tantalum oxide
    magnesium
    capacitor
    Opis:
    In this study, high-purity tantalum metal powder was manufactured via self-propagating high-temperature synthesis. During the process, Ta2O5 and Mg were used as the raw material powder and the reducing agent, respectively, and given that combustion rate and reaction temperature are important factors that influence the success of this process, these factors were controlled by adding an excessive mass of the reducing agent (Mg) i.e., above the chemical equivalent, rather than by using a separate diluent. It was confirmed that Ta metal powder manufactured after the process was ultimately manufactured 99.98% high purity Ta metal powder with 0.5 μm particle size. Thus, it was observed that adding the reducing reagent in excess favored the manufacture of high-purity Ta powder that can be applied in capacitors.
    Źródło:
    Archives of Metallurgy and Materials; 2021, 66, 4; 935-939
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors
    Autorzy:
    Kuparowitz, M.
    Sedlakova, V.
    Grmela, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/221515.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    niobium oxide capacitors
    tantalum capacitors
    leakage current
    ion diffusion
    ion drift
    Opis:
    High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL) variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5. Here, the equilibrium between the ion drift and diffusion is achieved. The process of leakage current degradation is therefore partially reversible. When the external electric field is lowered, or the samples are shortened, the leakage current for a given voltage decreases with time and the DCL vs. time characteristics are described by the exponential stretched law with an exponent n = 0.5, thus the ion redistribution by diffusion becomes dominant.
    Źródło:
    Metrology and Measurement Systems; 2017, 24, 2; 255-264
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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