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    Wyświetlanie 1-6 z 6
    Tytuł:
    Performance evaluation of ZVS/ZCS high efficiency AC/DC converter for high power applications
    Autorzy:
    Ali, A.
    Chuanwen, J.
    Khan, M. M.
    Habib, S.
    Ali, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/200472.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    switching losses
    zero current switching
    zero voltage switching
    power quality
    reverse recovery loss
    Opis:
    The increased power density, reduced switching losses with minimum electromagnetic interference (EMI), and high efficiency are essential requirements of power converters. To achieve these characteristics, soft power converters employing soft switching techniques are indispensable. In this paper, a ZCS/ZVS PWM AC/DC converter topology has been emphasized, which finds applications in high power systems such as automobile battery charging and renewable energy systems. This converter scheme maintains zero current and zero voltage switching conditions at turn on and turn off moments of semiconductor switches, respectively and soft operation of rectifier diodes that lead to negligible switching and diode reverse recovery losses. Moreover, it improves power quality and presents high input power factor, low total harmonic distortion of the input current (THDI ) and improved efficiency. The validity of theoretical analysis of the proposed converter has been carried out experimentally on a 10 kW laboratory prototype. Experimental results prove that the soft switching operation of the semiconductor switches and diodes is maintained at 98.6% rated load efficiency. In addition, the performance evaluation has been performed by comparative analysis of the proposed converter with some prior art high power AC/DC converters. Efficiencies of the proposed and prior art high power topologies have been determined for different load conditions. The highest efficiency, power factor and lower THDI of the proposed converter topology complies with international standards.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 793-807
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The desctiption of turn-off process and evaluation of switching power losses in the ultra fast power MOSFET
    Autorzy:
    Grzejszczak, P.
    Barlik, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193214.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    power MOSFET
    turn-off transient
    parasitic capacitance
    switching losses
    thermovision measurement
    Opis:
    The article presents an analytical description of the turn-off process of the power MOSFET suitable for use in high-frequency converters. The purpose of this description is to explain the dynamic phenomena occurring inside the transistor and contributing to the switching power losses. The detailed description uses the results of simulation studies carried out using a very precise model of the CoolMOS transistor manufactured by Infineon (IPW60R070C6). The theoretical analysis has been verified in experimental measurements of power dissipated during turn-off transient of MOSFET operating in a full bridge converter with switching frequency of 100 kHz. To estimate these switching losses an original thermovision method based on the measurement of heat dissipated in the power semiconductor switches has been used. The obtained results confirm the correctness of the conclusions drawn from the theoretical analysis presented in this paper.
    Źródło:
    Power Electronics and Drives; 2016, 1, 36/1; 55-67
    2451-0262
    2543-4292
    Pojawia się w:
    Power Electronics and Drives
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A method of reducing switching losses in three-level NPC inverter
    Autorzy:
    Beniak, R.
    Rogowski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193262.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    reduction of switching losses
    three-level NPC inverter
    space vector modulation
    Opis:
    The aim of the paper is to present a concept of implementation of a space vector modulation (SVM) algorithm, which is used to create alternating current waveforms of changing amplitude and frequency in power inverters. The main goal of the method is to decrease the number of state changes in power transistors. It is realized by utilizing a prediction algorithm and sequences of transistors, which are not common in use. The method requires measurement of inverter output current flow. The prediction algorithm analyzes possible sequences of transistors’ states and choose those which offers smaller switch count. A decrease of about 20% was obtained for the cases tested. This paper presents simulation result for selected driving scenario. The described method decreases the number of state changes in power transistors and therefore it is a potentially good method to considerably decrease energy losses of multilevel inverter-powered drive.
    Źródło:
    Power Electronics and Drives; 2016, 1, 36/2; 55-63
    2451-0262
    2543-4292
    Pojawia się w:
    Power Electronics and Drives
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules
    Autorzy:
    Zięba, Dawid
    Rąbkowski, Jacek
    Powiązania:
    https://bibliotekanauki.pl/articles/2173649.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    SiC MOSFET
    power modules
    channel current
    switching losses
    time alignment
    moduł mocy
    prąd kanału
    straty przełączania
    wyrównanie czasu
    Opis:
    High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities. As the switching processes get increasingly rapid, the parasitic capacitances and inductances appearing in SiC MOSFET power modules affect switching transients more and more significantly. Even relatively small parasitic capacitances can cause a significant capacitive current flow through the SiC MOSFET power module. As the capacitive current component in the drain current during the turn-off process is significant, a commonly used metod of determining the switching power losses based on the product of instantaneous values of drain-source voltage and drain current may lead to a severe error. Another problem is that charged parasitic capacitances discharge through the MOSFET resistive channel during the turn-on process. As this happens in the internal structure, that current is not visible on the MOSFET terminals. Fast switching processes are challenging to measure accurately due to the imperfections of measurement probes, like their output signals delay mismatch. This paper describes various problems connected with the correct determination of switching power losses in high-speed SiC MOSFET power modules and proposes solutions to these problems. A method of achieving a correct time alignment of waveforms collected by voltage and current probes has been shown and verified experimentally. In order to estimate SiC MOSFET channel current during the fast turn-off process, a method based on the estimation of nonlinear parasitic capacitances current has also been proposed and verified experimentally.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2022, 70, 2; art. no. e140695
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Wybrane sposoby minimalizacji łączeniowych strat energii w wysokonapięciowych tranzystorach MOSFET pracujących z twardą komutacją
    Selected methods to reduce hard-switching losses in high voltage power MOSFETS
    Autorzy:
    Grzejszczak, P
    Barlik, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/160197.pdf
    Data publikacji:
    2015
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
    Tematy:
    tranzystory MOSFET
    łączeniowe straty energii
    twarde załączanie
    ładunek wsteczny diod
    MOSFET
    switching losses
    hard commutation
    body diode reverse recovery charge
    Opis:
    W artykule przedstawiono wybrane sposoby ograniczania łączeniowych strat energii w tranzystorach MOSFET pracujących z twardą komutacją. Głównym źródłem strat energii w tym procesie jest ładunek wsteczny diod zwrotnych komplementarnych łączników w gałęzi. W badaniach właściwości dynamicznych strukturalnych diod zwrotnych wysokonapięciowych tranzystorów MOSFET wykazano ścisłą zależność ładunku wstecznego od długości czasu martwego w gałęzi przekształtnika. W związku z powyższym zaproponowano sposób minimalizacji dynamicznych strat energii przez dostosowanie czasu martwego w gałęziach przekształtnika do wartości prądu przełączanego przez tranzystory. Wyniki badań zaprezentowano dla tranzystorów MOSFET wykonanych w różnych technologiach
    In this paper, selected methods to reduce switching losses in Power MOSFETs under hard switching operation were presented. The main part of these switching losses in two switches branch is body diode reverse recovery charge. Studies have demonstrated the dependence of the reverse recovery charge on the dead time length. Accordingly, the proposed methods of minimizing switching losses by adjusting the dead time length to switching current value. Simulation studies have shown a significant reduction in switching losses in the dual active bridge after applying the control algorithm with a variable dead time.
    Źródło:
    Prace Instytutu Elektrotechniki; 2015, 270; 5-13
    0032-6216
    Pojawia się w:
    Prace Instytutu Elektrotechniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Generation of two identical ns laser pulses at single μs spacing by switching output mirror transmission
    Autorzy:
    Skórczakowski, Marek
    Żendzian, Waldemar
    Jankiewicz, Zdzisław
    Powiązania:
    https://bibliotekanauki.pl/articles/220917.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    double pulse Q-switched laser
    pulsed holographic interferometry
    transmission losses switching
    diode pumped Q-switched laser
    Opis:
    Generation of two identical ns laser pulses spaced by a single μs time interval by means of sequential switching of the output mirror transmittance in a diode-pumped Nd:YAG laser is reported, to our knowledge, for the first time. The theoretical study of the process of transmission losses switching is developed. This analysis confirms the possibility of generation of two identical Q-switched laser pulses with 100% efficiency with respect to the referenced single pulse energy. The detailed characterization of the laser in free-running, single and double Q-switching regimes is presented. The laser can be applied in different branches of metrology as PIV, LIBS or holographic interferometry.
    Źródło:
    Metrology and Measurement Systems; 2020, 27, 3; 513-530
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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