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Tytuł:
Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
Autorzy:
Morath, Christian P.
Casias, Lilian K.
Umana-Membreno, Gilberto A.
Webster, Preston T.
Grant, Perry C.
Maestas, Diana
Cowan, Vincent M.
Faraone, Lorenzo
Krishna, Sanjay
Balakrishnan, Ganesh
Powiązania:
https://bibliotekanauki.pl/articles/2204224.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
III-V infrared detectors
Bulk InAsSb
InAsSb/InAs superlattice
mobility
carrier concentration
Opis:
The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144554
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation
Autorzy:
Bataillon, Clara
Perez, Jean-Phillipe
Alchaar, Rodolphe
Michez, Alain
Gilard, Olivier
Saint-Pé, Olivier
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/2204227.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
displacement damage dose
proton radiation
total ionizing dose
type-II superlattice photodetector
Opis:
In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff wavelength from 11 μm to 13 μm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙10¹¹ H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144552
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure
Autorzy:
Lee, Hyun-Jin
Eom, Jun Ho
Jung, Hyun Chul
Kang, Ko-Ku
Ryu, Seong Min
Jang, Ahreum
Kim, Jong Gi
Kim, Young Ho
Jung, Han
Kim, Sun Ho
Choi, Jong Hwa
Powiązania:
https://bibliotekanauki.pl/articles/2204217.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
InAs/GaSb type-II superlattice
dualband detector
dark current
spectral quantum efficiency
noise equivalent temperature difference
Opis:
Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by biasselectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dualband detectors was also improved. Finally, a 20 µm pitch 640 x 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144560
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure
Autorzy:
Bouschet, Maxime
Arounassalame, Vignesh
Ramiandrasoa, Anthony
Perez, Jean-Philippe
Péré-Laperne, Nicolas
Ribet-Mohamed, Isabelle
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/2204222.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared photodetector
type-II superlattice
barrier structure
Ga-free
transport
anisotropy
Opis:
In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 μm at 90 K to 7.44 μm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144549
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
Autorzy:
Lubyshev, Dmitri
Fastenau, Joel M.
Kattner, Michael
Frey, Philip
Nelson, Scott A.
Flick, Ryan
Wu, Ying
Liu, Amy W. K.
Szymanski, Dennis E.
Martinez, Becky
Furlong, Mark J.
Dennis, Richard
Bundas, Jason
Sundaram, Mani
Powiązania:
https://bibliotekanauki.pl/articles/2204213.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
focal plane arrays
InAs/InAsSb
photodetectors
long wavelength infrared type-II superlattice
metamorphic buffers
superlattice period reduction
Opis:
Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
Autorzy:
Delmas, Marie
Ramos, David
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Rihtnesberg, David
Almqvist, Susanne
Becanovic, Smilja
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204225.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detectors
short-wavelength infrared
InAs/GaSb superlattice
type-II superlattice
Opis:
This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InAs/InAsSb superlattice infrared detectors
Autorzy:
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Rafol, Sir B.
Fisher, Anita M.
Hill, Cory J.
Pepper, Brian J.
Maruyama, Yuki
Gunapala, Sarath D.
Powiązania:
https://bibliotekanauki.pl/articles/2204211.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
type-II superlattice
InAs/InAsSb
complementary barrier infrared detectors
strained layer superlattice
Opis:
Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long wavelength type-II superlattice barrier infrared detector for CubeSat hyperspectral thermal imager
Autorzy:
Rafol, Sir B.
Gunapala, Sarath D.
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Pepper, Brian J.
Hill, Cory J.
Maruyama, Yuki
Fisher, Anita M.
Sood, Ashok
Zeller, John
Wright, Robert
Lucey, Paul
Nunes, Miguel
Flynn, Luke
Babu, Sachidananda
Ghuman, Parminder
Powiązania:
https://bibliotekanauki.pl/articles/2204204.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type-II superlattice
focal plane array
infrared detector
quantum efficiency
noise equivalent difference temperature
dark current density
anti-reflective coating
Opis:
The hyperspectral thermal imaging instrument for technology demonstration funded by NASA’s Earth Science Technology Office under the In-Space Validation of Earth Science Technologies program requires focal plane array with reasonably good performance at a low cost. The instrument is designed to fit in a 6U CubeSat platform for a low-Earth orbit. It will collect data on hydrological parameters and Earth surface temperature for agricultural remote sensing. The long wavelength infrared type-II strain layer superlattices barrier infrared detector focal plane array is chosen for this mission. With the driving requirement dictated by the power consumption of the cryocooler and signal-noise-ratio, cut-off wavelengths and dark current are utilized to model instrument operating temperature. Many focal plane arrays are fabricated and characterised, and the best performing focal plane array that fulfils the requirements is selected. The spectral band, dark current and 8-9.4 μm pass band quantum efficiency of the candidate focal plane array are: 8-10.7 μm, 2.1∙10ˉ⁵ A/cm², and 47%, respectively. The corresponding noise equivalent difference temperature and operability are 30 mK and 99.7%, respectively. Anti-reflective coating is deposited on the focal plane array surface to enhance the quantum efficiency and to reduce the interference pattern due to an absorption layer parallel surfaces cladding material.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144569
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
Autorzy:
Martyniuk, Piotr
Benyahia, Djalal
Powiązania:
https://bibliotekanauki.pl/articles/2204216.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
molecular beam epitaxy
superlattice
X-ray diffraction
III-V semiconductor
Opis:
Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode
Autorzy:
Makowiec, Marcin
Kolek, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/2204215.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type-II superlattice
broken-gap superlattice diode
band-to-band tunnelling
quantum transport
nonequilibrium Green’s function
twoband Hamiltonian
Opis:
In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the midinfrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the k·p analysis. In the paper, a superlattice device is analysed on a quantum level: the nonequilibrium Green’s function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics - the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an ‘order of magnitude’ estimation of the band-to-band tunnelling current.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144558
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layer
Autorzy:
Fokt, Maciej
Jasik, Agata
Sankowska, Iwona
Mączko, Herbert S.
Paradowska, Karolina M.
Czuba, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/27315692.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type I AlSb/GaSb superlattice
8-band k·p perturbation theory
nextnano simulations
AlSb layer degradation
Opis:
This paper presents results of the characterisation of type I GaSb/AlSb superlattices (SLs) with a thin GaSb layer and varying thicknesses of an AlSb layer. Nextnano software was utilized to obtain spectral dependence of absorption and energy band structure. A superlattice (SL) with an energy bandgap of ~ 1.0 eV and reduced mismatch value was selected for experimental investigation. SLs with single (sample A) and double (sample B) AlSb barriers and a single AlSb layer (sample C) were fabricated using molecular beam epitaxy (MBE). Optical microscopy, high-resolution X-ray diffractometry, and photoluminescence were utilized for structural and optical characterisation. The presence of satellite and interference peaks in diffraction curves confirms the high crystal quality of superlattices. Photoluminescence signal associated with the superlattice was observed only for sample B and contained three low-intensity peaks: 1.03, 1.18, and 1.25 eV. The first peak was identified as the value of the energy bandgap of the SL. Other two peaks are related to optical transitions between defect states located at the interface between the SL and the top AlSb barrier. The time-dependent changes observed in the spectral characteristics are due to a modification of the SL/AlSb interface caused by the oxidation and hydroxylation of the AlSb layer.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e147912
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
Autorzy:
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204214.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p
Opis:
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818207.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818204.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Korelacyjny pomiar gęstości widmowej mocy szumów detektorów fotonowych do spektroskopii absorpcyjnej
Cross-correlation method for noise measurements of photodetectors used for laser absorption spectroscopy
Autorzy:
Achtenberg, Krzysztof
Mikołajczyk, Janusz
Bielecki, Zbigniew
Wojtas, Jacek
Powiązania:
https://bibliotekanauki.pl/articles/1857073.pdf
Data publikacji:
2020
Wydawca:
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Tematy:
szumy
detektory IR
spektroskopia absorpcyjna w podczerwieni
detektor supersieciowy
noise
infrared detectors
infrared absorption spectroscopy
superlattice detector
Opis:
W pracy przedstawiono wyniki pomiarów gęstości widmowej napięcia szumów detektorów fotonowych o małych rezystancjach przy użyciu specjalnie opracowanego stanowiska pomiarowego. Badania tych detektorów mają duże znaczenie dla wielu aplikacji. Są one szczególnie istotne dla układów laserowej spektroskopii absorpcyjnej do wykrywania śladowych ilości gazów. Uzyskiwana w nich granica wykrywalności jest bezpośrednio związana nie tylko z szumami źródeł promieniowania i szumem tła, lecz także z szumami detektora oraz kolejnych stopni fotoodbiornika. Zastosowanie w opracowanym systemie specjalnie zaprojektowanych ultramałoszumowych torów pomiarowych (wzmacniacze o napięciu szumów 3,6 × 10⁻¹⁹ V² /Hz dla f > 1 kHz) oraz operacji korelacji sygnałów w czasie 10 minut umożliwiło uzyskanie szumu tła poniżej 10⁻¹⁸ V² /Hz dla f > 10 Hz oraz poniżej 10⁻¹⁹ V² /Hz dla f > 1 kHz. Efektywność systemu zweryfikowano poprzez pomiary referencyjnych rezystorów, a następnie detektora z supersieci drugiego rodzaju (T2SL) wykonanego z InAs/InAsSb.
The paper presents noise measurements of low-resistance photon detectors with a specially developed system. These measurements are significant for many applications. This issue is particularly critical for laser absorption spectroscopy systems to detect trace amounts of gases. In these systems, the detection limit is determined by noise origins, e.g., light source, background, and detector noise and its readout electronics. The use of some specially designed components of the system (low-noise - 3.6 × 10⁻¹⁹ V² /Hz for f >1 kHz) cross-correlation signal processing provides to obtain a measuring floor noise below 10⁻¹⁸ V² /Hz for f > 10 Hz and below 10⁻¹⁹ V² /Hz for f > 1 kHz after ten minutes’ analysis. Measurements of some reference resistors have verified the system’s performance. Finally, the system was also applied to determine the spectral noise density of the II-Type SuperLattice photodetector made of InAs/InAsSb.
Źródło:
Biuletyn Wojskowej Akademii Technicznej; 2020, 69, 4; 73-83
1234-5865
Pojawia się w:
Biuletyn Wojskowej Akademii Technicznej
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 22

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