Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "superlattice" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 22
Tytuł:
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
Autorzy:
Delmas, Marie
Ramos, David
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Rihtnesberg, David
Almqvist, Susanne
Becanovic, Smilja
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204225.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detectors
short-wavelength infrared
InAs/GaSb superlattice
type-II superlattice
Opis:
This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InAs/InAsSb superlattice infrared detectors
Autorzy:
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Keo, Sam A.
Rafol, Sir B.
Fisher, Anita M.
Hill, Cory J.
Pepper, Brian J.
Maruyama, Yuki
Gunapala, Sarath D.
Powiązania:
https://bibliotekanauki.pl/articles/2204211.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
type-II superlattice
InAs/InAsSb
complementary barrier infrared detectors
strained layer superlattice
Opis:
Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144565
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
Autorzy:
Lubyshev, Dmitri
Fastenau, Joel M.
Kattner, Michael
Frey, Philip
Nelson, Scott A.
Flick, Ryan
Wu, Ying
Liu, Amy W. K.
Szymanski, Dennis E.
Martinez, Becky
Furlong, Mark J.
Dennis, Richard
Bundas, Jason
Sundaram, Mani
Powiązania:
https://bibliotekanauki.pl/articles/2204213.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
focal plane arrays
InAs/InAsSb
photodetectors
long wavelength infrared type-II superlattice
metamorphic buffers
superlattice period reduction
Opis:
Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The pecularities of structure and diffraction by mis fit mixed-layer nanotubes
Autorzy:
Figovsky, O.
Pashin, D.
Khalitov, Z.
Valeeva, D.
Chkanov, A.
Powiązania:
https://bibliotekanauki.pl/articles/411579.pdf
Data publikacji:
2012
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
nanorurki
karbowanie nanorurek
nanotube
goffered nanotube
superlattice
Opis:
The analysis of diffraction by separate mixed-layer goffered nanotube's lattice is offered. Two extreme cases of the large and small size of coherent scattering regions (CSR) in a radial direction are considered. The qualitative explanation of observed diffraction effects is given.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2012, 2; 7-14
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode
Autorzy:
Makowiec, Marcin
Kolek, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/2204215.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type-II superlattice
broken-gap superlattice diode
band-to-band tunnelling
quantum transport
nonequilibrium Green’s function
twoband Hamiltonian
Opis:
In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the midinfrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the k·p analysis. In the paper, a superlattice device is analysed on a quantum level: the nonequilibrium Green’s function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics - the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an ‘order of magnitude’ estimation of the band-to-band tunnelling current.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144558
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical gain in one-dimensional photonic band gap structures with n-i-p-i crystal layers
Autorzy:
Nefedov, I.S.
Gusyatnikov, V.N.
Marciniak, M.
Kononenko, V.K.
Ushakov, D.V.
Powiązania:
https://bibliotekanauki.pl/articles/308163.pdf
Data publikacji:
2002
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
photonic crystals
doping superlattice
optical gain
tunable source
Opis:
The gain enhancement in a layered periodic photonic band gap structure containing active medium based on GaAs n-i-p-i superlattices separated by A1GaAs layers is analyzed. The dependences of extinction coefficient and refractive index on excitation level and wavelength are presented. Transmission characteristics of a probe light versus excitation level are calculated. It is shown that the threshold of generation can be essentially reduced if the wavelength of probe light falls to the band gap edge.
Źródło:
Journal of Telecommunications and Information Technology; 2002, 1; 60-64
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wpływ typu przekładki na transmisję złożenia dwóch struktur binarnych
The influence of the type of separator material in the combination of two binary structures
Autorzy:
Szota, M.
Powiązania:
https://bibliotekanauki.pl/articles/407762.pdf
Data publikacji:
2014
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
propagacja
supersieci
metamateriały
filtry optyczne
propagation
superlattice
metamaterials
optical filters
Opis:
W pracy przedstawiono metody symulacji transmisji układów wielowarstwowych oraz zbadano wpływ zmiany typu oraz grubości warstwy materiału rozdzielającego dwie struktury wielowarstwowe. Do analizy wykorzystano metodę macierzową. Wykazano znaczący wpływ niejednorodności wykonania warstwy rozdzielającej (przekładki) na transmisję oraz znacznie mniejszy niedokładności wykonania grubości warstwy.
The paper presents a simulation method of multilayers transmission and examines the impact of changes in the type and thickness of the material separating the two multilayer structures. For the analysis, the matrix method were used. It has been shown significantly influence the implementation of the separation layer inhomogeneities on the transmission and significantly smaller of thickness inaccuracies implementation.
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2014, 3; 23-26
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
Autorzy:
Martyniuk, Piotr
Benyahia, Djalal
Powiązania:
https://bibliotekanauki.pl/articles/2204216.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
molecular beam epitaxy
superlattice
X-ray diffraction
III-V semiconductor
Opis:
Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure
Autorzy:
Bouschet, Maxime
Arounassalame, Vignesh
Ramiandrasoa, Anthony
Perez, Jean-Philippe
Péré-Laperne, Nicolas
Ribet-Mohamed, Isabelle
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/2204222.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared photodetector
type-II superlattice
barrier structure
Ga-free
transport
anisotropy
Opis:
In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 μm at 90 K to 7.44 μm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144549
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
Autorzy:
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204214.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p
Opis:
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818204.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
Autorzy:
Alchaar, Rodolphe
Rodriguez, Jean-Baptiste
Höglund, L.
Naureen, Shagufta
Costard, Eric
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/1818240.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
barrier photodetector
InAs/GaSb type-2 superlattice
long wavelength infrared
performance analysis
Opis:
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 164--170
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
Autorzy:
Alchaar, R.
Rodriguez, J.-B.
Höglund, L.
Naureen, S.
Costard, E.
Christol, P.
Powiązania:
https://bibliotekanauki.pl/articles/1818247.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
barrier photodetector
InAs/GaSb type-2 superlattice
long wavelength infrared
performance analysis
Opis:
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 164--170
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation
Autorzy:
Bataillon, Clara
Perez, Jean-Phillipe
Alchaar, Rodolphe
Michez, Alain
Gilard, Olivier
Saint-Pé, Olivier
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/2204227.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
displacement damage dose
proton radiation
total ionizing dose
type-II superlattice photodetector
Opis:
In this work, the authors investigated the influence of proton-irradiation on the dark current of XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff wavelength from 11 μm to 13 μm at 80 K. The proton irradiations were performed with 63 MeV protons and fluences up to 8∙10¹¹ H+/cm² on a type-II superlattice detector kept at cryogenic (100 K) or room temperature (300 K). The irradiation temperature of the detector is a key parameter influencing the effects of proton irradiation. The dark current density increases due to displacement damage dose effects and this increase is more important when the detector is proton-irradiated at room temperature rather than at cryogenic temperature.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144552
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818207.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 22

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies