Temat: silicon source - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Research on Distribution and Morphology of Primary Si Under the Effect of Direct Current
Autorzy:: Li, Jiayan
Njuguna, Benson Kihono
Ni, Ping
Wang, Liang
Tan, Yi
Powiązania:: https://bibliotekanauki.pl/articles/2049663.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: silicon source
direct current
Joule heating
Si morphology
Fe impurity
Opis:: A source of pure silicon was added into an alloy refining system during a refining process with the application of a direct electric current. The effect of the temperature difference between the graphite electrodes and the alloy was decreased. The temperature increase value (ΔT) of the Al-28.51wt.%Si alloy sample caused by Joule heating was calculated by weighing the mass of primary silicon. When the current density was 5.0×105A/m2, the overall temperature increase in the alloy was about 90°C regardless of the alloy composition. Adequate silicon atoms recorded the footprint of the electric current in the alloy melt. The flow convection generated by the electric current in the melt during the solidification process resulted in the refinement of primary silicon. The Fe impurity content in alloy refining without the electric current density was 2.16 ppm. However, it decreased to 1.27 ppmw with the application of an electric current density of 5.0×105A/m2.
Źródło:: Archives of Metallurgy and Materials; 2021, 66, 2; 367-372
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: A current-source concept for fast and efficient driving of silicon carbide transistors
Autorzy:: Rąbkowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/141047.pdf
Data publikacji:: 2013
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: silicon carbide transistors
gate drivers
current-source
switching process
Opis:: The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.
Źródło:: Archives of Electrical Engineering; 2013, 62, 2; 333-343
1427-4221
2300-2506
Pojawia się w:: Archives of Electrical Engineering
Dostawca treści:: Biblioteka Nauki

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