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Tytuł:
Design of a measurement stand with DAQ card and semiconductor laser for recording acoustic signals
Autorzy:
Krawiecki, Z.
Gloger, D.
Powiązania:
https://bibliotekanauki.pl/articles/97505.pdf
Data publikacji:
2014
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
acoustic signal
recording
photodetector
semiconductor laser
Opis:
This article describes the stage of work associated with the implementation of a program- controlled measuring stand for recording the acoustic signals. An attempt has been made for practical implementation of the stand that uses light from a semiconductor laser, modulated by acoustic wave to obtain the information transmitted by this wave. The authors decided to build the hardware construction of the stand with the use of: a PC which serves as the controller, a DAQ card, the light emitter set with a semiconductor laser and the light receiving set capable of processing the received signal into a form suitable for a DAQ card. Moreover, additional equipment used during the examination tests is also described. The software part of the stand includes: device drivers and an application written in LabVIEW environment. The functions of signal processing and analysis, graphical and numerical presentation of the data, recording to file and reading the stored data from a file are all implemented in the application. The achieved stage of a work has been confirmed by sample measurements.
Źródło:
Computer Applications in Electrical Engineering; 2014, 12; 541-550
1508-4248
Pojawia się w:
Computer Applications in Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The use of the computer system of detection of the laser beam in the measurements of geometry of mine shafts
Autorzy:
Jaśkowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/225514.pdf
Data publikacji:
2011
Wydawca:
Politechnika Warszawska. Wydział Geodezji i Kartografii
Tematy:
laser półprzewodnikowy
instalacje kanalizacyjne
semiconductor laser
sewer systems
Opis:
A huge progress in the laser technology, in particular the creation of the semiconductor laser, allows to see the method of laser plumbing as a method of the future which can replace mechanical plumbing. Therefore, the issues connected with the method of plumbing become more and more popular. The most important ones are: - directing the laser beam, - determining the center of the laser beam at the point of target (detection of the laser beam). The issue of the focus of the laser beam, thanks to the researches made in 1970 and 1980 and aimed to the use of the laser light in the measurements of the shafts, is practically resolved (Jóźwik 1994). The construction of many types of laser plummets (based on different operating principles), as well as the possibility of adapting the optical plummets to cooperate with the laser diode, enables to focus the laser beam with high precision. The second issue concerning the detection of the laser bean, limited so far the possibilities of applicability of this method. Currently, the most common method of detection is a visual method (used by PMG Katowice, ZG Rudna, ZG Polkowice) aimed to specify the center of the laser beam on the observation wheel with an accuracy of 3mm. There is also applied the photogrammetric method based on the digital photography used by DARTECH company from Ruda Śląska. These methods are either not very accurate (the visual method) or allowing to perform measurements only at selected levels of measurement (the photogrammetric method).
Źródło:
Reports on Geodesy; 2011, z. 1/90; 165-172
0867-3179
Pojawia się w:
Reports on Geodesy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical MIDO : Multiple Inputs-Digital Output : device
Autorzy:
Alaiz-Gudin, Antonio M.
González-Marcos, Ana P.
Powiązania:
https://bibliotekanauki.pl/articles/2063884.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
distributed feedback laser
multi quantum well
optical bistability
semiconductor laser
Opis:
Advances in photonic technologies, with new processes and scopes of photonic integrated circuits, have generated a lot of interest as the field allows to obtain sensors with reduced size and cost and build systems with high interconnectivity and information density. In this work, answering the needs of photonic sensors that must be portable, more energy- efficient, and more accurate than their electrical counterparts, also with a view to the emerging field of neuromorphic photonics, a versatile device is presented. The proposed device makes use of the well-known advantages provided by optical bistability. By combining two distributed feedback-multi quantum well semiconductor laser structures, this new optical multiple inputs - digital output device offers various essential purposes (such as logic gates, wavelength detector and monitoring) with no need for specific manufacturing for each of them. Through a commercial computer-aided design tool, VPIphotonics™, the necessary characterization of proposed device is also described.
Źródło:
Opto-Electronics Review; 2021, 29, 4; 106--116
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First vertical-cavity surface-emitting laser made entirely in Poland
Autorzy:
Gębski, Marcin
Śpiewak, Patrycja
Kołkowski, Walery
Pasternak, Iwona
Głowadzka, Weronika
Nakwaski, Włodzimierz
Sarzała, Robert P.
Wasiak, Michał
Czyszanowski, Tomasz
Strupiński, Włodzimierz
Powiązania:
https://bibliotekanauki.pl/articles/2173617.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor laser
GaAs
gallium arsenide
optical communication
VCSEL
laser półprzewodnikowy
arsenek galu
komunikacja optyczna
Opis:
The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137272
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First vertical-cavity surface-emitting laser made entirely in Poland
Autorzy:
Gębski, Marcin
Śpiewak, Patrycja
Kołkowski, Walery
Pasternak, Iwona
Głowadzka, Weronika
Nakwaski, Włodzimierz
Sarzała, Robert P.
Wasiak, Michał
Czyszanowski, Tomasz
Strupiński, Włodzimierz
Powiązania:
https://bibliotekanauki.pl/articles/2090716.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor laser
GaAs
gallium arsenide
optical communication
VCSEL
laser półprzewodnikowy
arsenek galu
komunikacja optyczna
Opis:
The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; e137272, 1--6
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Irreversible blocking of polar excitations on frog sciatic nerve using semiconductor pulse laser irradiation
Autorzy:
Hirayama, Y.
Ishizuka, S.
Yamakawa, T.
Powiązania:
https://bibliotekanauki.pl/articles/385078.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
irreversible blocking
semiconductor pulse Laser Irradiation
frog sciatic nerve
Opis:
The final purpose of our research is to cripple the epileptogenic focus by laser irradiation. However, the effect of laser irradiation on brain nerves is not well known. In this paper, we observed laser irradiation to the transmission of action potential of a bullfrog sciatic nerve in the experiment. In addition the marginal amplitude of laser energy is obtained. The bullfrog nerve preparations were stimulated supramaximal intensity pulse. The pulse width and the pulse interval are 1 msec and 1 sec, respectively. A semiconductor pulse laser irradiation (the wavelength, the pulse width and the frequency are 808 nm, 990 µsec and 50 Hz, respectively) was employed until when the amplitude of the action potential decreases to 10 %. The laser light was irradiated to the portion between two electrode pairs for recording. The energy of the laser is variable between 13.9- 202.5 mJ/cm2. The laser irradiator is connected to an optical fiber whose diameter is 1 mm. The action potential of the sciatic nerve is observed at 1 day after in order to confirm irreversibility. The experiment was delivered by the laser pulse, the energy of which over 32.9 mJ/cm2. The peak of action potential was decreased gradually by laser irradiation with depending on the time of irradiation. The time to blocking is reciprocally proportional to laser energy. At a day after the experiment, the action potential was not recovered. This result shows the laser irradiation give irreversible blocking to polar excitations. We observed the frog sciatic nerve is damaged by laser irradiation. The results show a possibility that the epileptogenic focus can be crippled by laser irradiation. We are going to have more experiments and obtain important laser parameters. In the future, the experiment and the result are expanded using rat brain and applied human surgery.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 210-212
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Pumping Beam Width on VECSEL Output Power
Autorzy:
Sokół, A. K.
Sarzała, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/226018.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
VECSEL
SDL
semiconductor disk laser
simulation
numerical modeling
power scaling
Opis:
The paper is devoted to a numerical analysis of an influence of a pumping beam diameter on output power of optically pumped vertical-external-cavity surface-emitting lasers. Simulations have been carried out for a structure with a GaInNAs/GaAs active region operating at 1.32 μm. Various assembly configurations have been considered. Results obtained show that laser power scaling is strongly affected by thermal properties of the device.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 3; 239-245
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal problems in arsenide VECSELs
Zagadnienia cieplne w arsenkowych laserach typu VECSEL
Autorzy:
Sokół, A.
Sarzała, R.
Powiązania:
https://bibliotekanauki.pl/articles/296424.pdf
Data publikacji:
2011
Wydawca:
Politechnika Łódzka. Wydawnictwo Politechniki Łódzkiej
Tematy:
VECSEL
laser półprzewodnikowy
gospodarka cieplna
GaInNAs
semiconductor disk laser
heat management
thermal management
Opis:
Different aspects of thermal management of GaAs-based vertical-external-cavity surface-emitting lasers (VECSELs) are described and analyzed by example of typical configurations of GaInNAs/GaAs multiple-quantum-well (MQW) VECSEL. Simulations of two-dimensional heat-flux spreading within investigated structures have been carried out with the aid of the self-consistent thermal finite-element method. Influence of pumping-beam and heat spreader properties on maximal temperature increase have been studied and different heat management techniques have been compared.
W pracy zostały opisane i przeanalizowane wybrane aspekty dotyczące własności cieplnych optycznie pompowanych laserów półprzewodnikowych o emisji powierzchniowej z zewnętrzną pionową wnęką rezonansową (VECSELs, ang. vertical-external-cavity surface-emitting lasers) na podłożu z GaAs. Obliczenia wykonano dla typowych konfiguracji montażowych lasera typu VECSEL z obszarem czynnym w postaci wielokrotnej studni kwantowej wykonanej w systemie materiałowym GaInNAs/GaAs. Do symulacji dwuwymiarowego rozpływu ciepła wykorzystano samouzgodniony model cieplny oparty na metodzie elementów skończonych (MES) , przy pomocy którego porównano własności cieplne poszczególnych struktur oraz określono wpływ parametrów wiązki pompującej (moc, średnica) i heat spreadera (przewodność cieplna, grubość) na maksymalny przyrost temperatury w ich wnętrzach.
Źródło:
Scientific Bulletin. Physics / Technical University of Łódź; 2011, 32; 53-63
1505-1013
2449-982X
Pojawia się w:
Scientific Bulletin. Physics / Technical University of Łódź
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Numerical model of a semiconductor disk laser
Autorzy:
Sokół, A. K.
Sarzała, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/174528.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
semiconductor disk laser
SDL
vertical-external-cavity surface-emitting laser
VECSEL
computer simulation
numerical modelling
Opis:
In this paper we describe the numerical model of a semiconductor disk laser, developed and implemented in the Photonics Group, Institute of Physics, Lodz University of Technology, Poland. It consists of four strongly interrelated components for: carrier transport, heat flow, material gain and optical phenomena calculations. Combination of these components gives the steady-state self-consistent model which enables a simulation of various aspects of a semiconductor disk laser operation. A numerical analysis of carrier and power losses within the active region of 1.3-μm GaInNAs/GaAs semiconductor disk laser has been carried out using this model.
Źródło:
Optica Applicata; 2016, 46, 2; 199-211
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stabilny sterownik półprzewodnikowych laserowych diod impulsowych dla dalmierza laserowego
Stable pulsed laser diode driver for rangefinder
Autorzy:
Jakubaszek, M.
Zygmunt, M.
Muzal, M.
Młodzianko, A.
Powiązania:
https://bibliotekanauki.pl/articles/208834.pdf
Data publikacji:
2014
Wydawca:
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Tematy:
półprzewodnikowe diody laserowe
sterowniki impulsowych diod laserowych
dalmierze laserowe
pulse laser driver
pulse laser rangefinders
semiconductor pulse laser driver
Opis:
W artykule przedstawiono podstawowe metody sterowania impulsowymi diodami laserowymi stosowanymi w układach nadajników dalmierzy laserowych wraz ze wskazaniem ich wad i zalet. Na podstawie tej analizy zaproponowano układ sterownika oraz przedstawiono teoretyczne podstawy jego działania. Układ testowy został wykonany i przebadany w Instytucie Optoelektroniki Wojskowej Akademii Technicznej.
This article presents comparison of methods of driving pulse laser diodes. Based on the results of shown analyses, the new design of pulse laser diode driver, using MOSFET transistor, was developed. The driver allows stable pulse laser pumping that is required for stable pulse laser emission in high accuracy lasers’ rangefinders. Design and theory of operation of the driver is shown, as well as working parameters acquired by testing of the prototype module.
Źródło:
Biuletyn Wojskowej Akademii Technicznej; 2014, 63, 1; 43-61
1234-5865
Pojawia się w:
Biuletyn Wojskowej Akademii Technicznej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Laser Technology and Applications 2012
Autorzy:
Romaniuk, R. S.
Gajda, J.
Powiązania:
https://bibliotekanauki.pl/articles/226404.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
lasers
laser technology
lasing materials
optoelectronics
laser theory
laser design
laser components
kinds of lasers
semiconductor laser
VCSEL
laser applications
photonics
nonlinear photonics
active optical fibers
optical fiber lasers
high power lasers
high intensity lasers
laser atomic clocks
Opis:
The research and technical achievements in the area of lasers are summarized every three years by the National Symposium on Laser Technology held in the Baltic See Resort Świnoujście near Szczecin, Poland. The paper presents a review of the main symposium subjects tracks debated during this key national lase event in September 2012. There are shown developement tendencies of laser materials and technologies and laser asociated branches of optoelectronics in this country, including the efforts of academia, governmental institutes, research businesses and industry. The symposium work are divided to two branches: development of lasers and laser applications, where the laser systems operators and laser users present their achievements. Topical tracks of the meeting are presented, as well as the keynote and invited subjects delivered by key representatives of the laser industry. The STL 2012 was a jubilee meeting held for the Xth time.
Źródło:
International Journal of Electronics and Telecommunications; 2013, 59, 2; 195-202
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
How to enhance a room-temperature operation of diode lasers and their arrays
Autorzy:
Sarzała, R. P.
Sokół, A. K.
Kuc, M.
Nakwaski, W.
Powiązania:
https://bibliotekanauki.pl/articles/174004.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
diode laser
thermal management
thermal crosstalk
semiconductor arrays
Opis:
A key problem to be solved during designing productive diode lasers and their lasing arrays is their proper thermal management enabling efficient high-power operation. Strictly speaking, the above demand leads to optimization of their structures to enhance lasing performance for high operation currents. It is well-known that deterioration of laser performance is mostly induced by excessive temperature increases within their volumes. In diode-laser arrays, additionally thermal crosstalk between array emitters should be taken into account. In the present paper, physics of heat-flux generation within the laser-diode volume and its extraction from it is analysed and described with the aid of our self-consistent simulation procedure. Then their thermal optimization is discussed including a proper design of a heat-flux generation within the laser volume, enhancement of its transport towards a laser heat-sink and, additionally in laser arrays, reduction of a thermal crosstalk between individual array emitters. The analysis is carried out using modern nitride edge-emitting ridge-waveguide lasers and their one-dimensional arrays as well as arsenide semiconductor disk lasers as typical examples of modern diode-laser designs. Physical processes responsible for heat-flux generation within these devices and heat-flux extraction from their volumes are analysed and an impact of some construction details on these processes is explained.
Źródło:
Optica Applicata; 2016, 46, 2; 213-226
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of technology of diode laser mirror processing to maximize the threshold of catastrophic optical degradation
Autorzy:
Dąbrowska, Elżbieta
Teodorczyk, Marian
Szymański, Michał
Maląg, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/1835816.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
laser diode
catastrophic optical damage
COD
laser mirror
semiconductor surface passivation
optical coating
electroluminescence
Opis:
In this paper, optimization works on the technology of passivation and optical coatings of laser diode facets are described. The main goal is to increase the optical power at which the catastrophic optical mirror damage occurs. The coatings and passivation processes have been done in an ion source-aided electron-beam evaporator. The essence of passivation was to remove native oxides and produce a native thin nitride layer with simultaneous saturation of the dangling atomic bonds. The procedure has been realized with the help of nitrogen or forming gas (N2 + H2) beam. As a result, we present sets of technological parameters allowing to increase the catastrophic optical mirror damage threshold of diode lasers.
Źródło:
Optica Applicata; 2020, 50, 4; 593-607
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3
Autorzy:
Vorobets, G. I.
Strebezhev, V. V.
Tkach, V. M.
Vorobets, O. I.
Strebezhev, V. M.
Powiązania:
https://bibliotekanauki.pl/articles/134893.pdf
Data publikacji:
2015
Wydawca:
Tomasz Mariusz Majka
Tematy:
semiconductor thin film
epitaxial layer
laser treatment
indium selenide
indium telluride
Opis:
The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.
Źródło:
Journal of Education and Technical Sciences; 2015, 2, 1; 5-8
2300-7419
2392-036X
Pojawia się w:
Journal of Education and Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A diode-pumped high-repetition-frequency passively Q-switched Nd:LaMgAl11O19 laser
Autorzy:
Xu, Yan
Gao, Ziye
Xia, Guangqiong
Wu, Zhengmao
Powiązania:
https://bibliotekanauki.pl/articles/1835801.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
Nd:LaMgAl11O19 disordered crystal
Q-switched laser
high pulse repetition frequency
PRF
semiconductor saturable absorber mirror
SESAM
laser diode
LD
Opis:
High-repetition-frequency Q-switched laser is realized through adopting a Nd:LaMgAl11O19 (Nd:LMA) disordered crystal as the gain material, a laser diode lasing at 796 nm as the pumped source, and a semiconductor saturable absorber mirror (SESAM) as the Q-switched device. The out-put characteristics are analyzed under using different transmittance T plane mirrors as an output coupler. Without adopting SESAM, the laser is operating at a CW state, and a relatively high transmittance is helpful for achieving high output power, slope efficiency and light-to-light efficiency. ForT = 7.5% and an absorbed power of 6.17 W, the output power arrives at its maximum of 1160 mW,and the corresponding slope efficiency and light-to-light efficiency are 20.71% and 18.78%, respectively. After introducing SESAM into the cavity, the laser operates at a passively Q-switched state, and the largest slope efficiency is 13.14% under T = 5.0%. Adopting five different output couplers, with the increase of the absorbed power, the pulse repetition frequencies, the pulse energies and the peak powers will ascend while the pulse widths will decline. The observed narrowest pulse width, the maximum pulse repetition frequency, the highest pulse energy and peak power are 1.745 μs, 175.88 kHz, 3.21 μJ and 1.84 W, respectively.
Źródło:
Optica Applicata; 2020, 50, 3; 415-423
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
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