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Wyszukujesz frazę "quantum tunnelling" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Tunnelling effects of a Gaussian wave packet impinging on a barrier
Autorzy:
Papadopoulos, George J.
Powiązania:
https://bibliotekanauki.pl/articles/1954608.pdf
Data publikacji:
2020
Wydawca:
Politechnika Gdańska
Tematy:
quantum tunnelling
Gaussiam wave packet
potential barrier
tunelowanie kwantowe
fale Gaussama
potencjalna bariera
Opis:
A general procedure based on momentum-like quantity provides the reflection and transmission amplitudes for a given barrier sandwiched by semiconductor reservoirs is presented. Furthermore, the evolution of the wave function stemming from an initial Gaussian wave packet located on the left hand side of the barrier with ignorable barrier overlap is obtained. The evolving wave function enables obtaining the associated probability and current densities space and time-wise. As application, the case of smooth double barrier is considered. The numerical results exhibit similar picture as obtained via propagator in the limited case of square barrier, e.g. repeated current density reversal at the barrier entrance, while being unidirectional at the exit. Presently, the treatment takes account of any barrier, inclusive of applied voltage. The basic quantity required is the value of the momentum-like quantity at the barrier entrance, which is obtained solving a Riccati equation governing the quantity, in question, whose value is known at the barrier exit in terms of the carrier energy and applied bias.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2020, 24, 1; 83-91
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum simulations of band-to-band tunnelling in a type-II broken-gap superlattice diode
Autorzy:
Makowiec, Marcin
Kolek, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/2204215.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type-II superlattice
broken-gap superlattice diode
band-to-band tunnelling
quantum transport
nonequilibrium Green’s function
twoband Hamiltonian
Opis:
In recent years, type-II superlattice-based devices have completed the offer of the electronic industry in many areas of applications. Photodetection is one of them, especially in the midinfrared wavelength range. It is due to the unique feature of a superlattice material, which is a tuneable bandgap. It is also believed that the dark current of superlattice-based photodetectors is strongly suppressed due to the suppression of the band-to-band tunnelling current in a superlattice material. This argument relies, however, on a semi-classical approach that treats superlattice as a bulk material with effective parameters extracted from the k·p analysis. In the paper, a superlattice device is analysed on a quantum level: the nonequilibrium Green’s function method is applied to the two-band Hamiltonian of the InAs/GaSb superlattice p-i-n diode. The analysis concentrates on the band-to-band tunnelling with the aim to validate the correctness of a semi-classical description of the phenomenon. The results of calculations reveal that in a superlattice diode, the inter-band tunnelling occurs only for certain values of energy and in-plane momentum, for which electronic and hole sub-bands cross. The transitions occurring for vanishing in-plane momentum produce resonances in the current-voltage characteristics - the feature which was reported in a few experimental observations. This scenario is quite different from that occurring in bulk materials, where there is a range of energy-momentum pairs for which the band-to-band tunnelling takes place, and so current-voltage characteristics are free from any resonances. However, simulations show that, while not justified for a detailed analysis, the semi-classical description can be applied to superlattice-based devices for an ‘order of magnitude’ estimation of the band-to-band tunnelling current.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144558
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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