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    Wyświetlanie 1-5 z 5
    Tytuł:
    Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Głuszko, G.
    Konarski, P.
    Ćwil, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308685.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    dual gate oxide
    gate stack
    oxynitride
    plasma implantation
    Opis:
    The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 3-8
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Konarski, P.
    Ćwil, M.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308689.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    gate stack
    oxynitride
    plasma implantation
    Opis:
    Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 9-15
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Kudła, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/308830.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOS technology
    plasma processing
    shallow implantation
    radiation damage
    Opis:
    The radiation damage caused by low energy r.f. plasmas has not been, to our knowledge, studied so far in the case of symmetric planar plasma reactors that are usually used for PECVD processes. The reason is that, unlike nonsymmetrical RIE reactors, such geometry prevents, basically, high-energy ion bombardment of the substrate. In this work, we present the results of experiments in which we have studied the influence of plasma processing on the state of silicon surface. Very low temperature plasma oxidation has been used as a test of silicon surface condition. The obtained layers were then carefully measured by spectroscopic ellipsometry, allowing not only the thickness to be determined accurately, but also the layer composition to be evaluated. Different plasma types, namely N2, NH3 and Ar, were used in the first stage of the experiment, allowing oxidation behaviour caused by the exposure to those plasma types to be compared in terms of relative differences. It has been clearly proved that even though the PECVD system is believed to be relatively safe in terms of radiation damage, in the case of very thin layer processing (e.g., ultra-thin oxynitride layers) the effects of radiation damage may considerably affect the kinetics of the process and the properties of the formed layers.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 70-75
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Post-acceleration of ions from the laser-generated plasma
    Autorzy:
    Giuffrida, L.
    Torrisi, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/146664.pdf
    Data publikacji:
    2011
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    laser ablation
    laser-plasma
    post-acceleration
    ion implantation
    Rutherford backscattering spectrometry (RBS) analysis
    Opis:
    An application of the laser-generated plasma for multi-energetic ion implantation is reported. In an experiment performed at Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud (INFN-LNS) of Catania, Italy the Nd:YAG laser was used, operating at the 1064 nm wavelength with the intensity of 1010 W/cm2. A laser pulse of 9 ns duration and 300 mJ energy was employed to ablate a solid target placed in a high vacuum. The free ion expansion occurred in a constant potential chamber placed at 30 kV positive voltage with respect to the ground, which allowed to extract ions with energy proportional to the charge state. In an another experiment, performed at the PALS Prague laser facility (1315 nm, 400 ps pulse width and the laser pulse energy delivered on target equal to about 35 J) Ti ions were obtained through the ablation of solid targets in vacuum by means of 1015 W/cm2 laser pulses. In both cases ion energy analyzers were used to measure the energy-to-charge ratio of the ions. The ion energy distribution was determined from the time-of-flight measurements. The depth profiles measured through Rutherford backscattering spectrometry (RBS) analysis are in good agreement with the ion energy analyzer spectroscopy measurements.
    Źródło:
    Nukleonika; 2011, 56, 2; 161-163
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Post acceleration of ions emitted from laser and spark - generated plasmas
    Autorzy:
    Torrisi, L.
    Cavallaro, S.
    Rosiński, M.
    Nassisi, V.
    Paperny, V.
    Romanov, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/146658.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    post ion acceleration
    laser plasma
    ion beam
    ion implantation
    Opis:
    Pulsed lasers at intensities of the order of 1010 W/cm2 interacting with solid matter in vacuum, produce hot plasmas at high temperatures and densities. The charge state distributions of the plasma generate a high electric field, which induces high ion acceleration along the normal to the target surface. The high yield of the emitted ions can generate a near constant current by using repetitive pulses irradiating thick targets. In order to increase ion energy, a post-acceleration system can be employed by using acceleration voltages above 10 kV. Special ion extraction methods can be employed to generate the final ion beam, which is multi-ionic and multi-energetic, due to the presence of different ion species and of different charge states. In this article four different methods of post ion acceleration, employed at the INFN-LNS of Catania, at the IPPLM of Warsaw, at the INFN of Lecce and at the LPI of Moscow, are presented, discussed and compared. All methods are able to implant ions in different substrates at different depth and at different dose-rates.
    Źródło:
    Nukleonika; 2012, 57, 3; 323-332
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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