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Wyszukujesz frazę "optoelectronic properties" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Tuning the Charge Transfer and Optoelectronic Properties of 4,6-Di(Thiophene-2-YL)Pyrimidine via Oligocenothiophene Substitution
Autorzy:
Irfan, A.
Chaudhry, A. R.
Al-Sehemi, A. G.
Muhammad, S.
Jin, R.
Tang, S.
Powiązania:
https://bibliotekanauki.pl/articles/356638.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
organic semiconductors
oligocene
density functional theory
optoelectronic properties
charge transfer properties
Opis:
Five new derivatives of 4,6-di(thiophen-2-yl)pyrimidine (DTP) were designed by structural modification with the aim to tune the electro-optical and charge transfer properties. The effect of oligocene and oligocenothiophene incorporation/substitution was investigated on various properties of interests. The smaller hole reorganization energy revealed that compounds 1-5 might be good hole transfer contenders. The smaller hole reorganization energy of newly designed five DTP derivatives than the pentacene showed that prior compounds might be good/comparable hole transfer materials than/to that of pentacene. The computed electron reorganization energy of DTP derivatives 1-5 are 124, 185, 93, 95 and 189 meV smaller than the meridional-tris (8-hydroxyquinoline) aluminum (mer-Alq3) illuminating that electron mobility of these derivatives might be better/comparable than/to referenced compound.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 4; 1629-1636
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, Electrical, and Optical Properties of ZnO Films Grown by Atomic Layer Deposition at Low Temperature
Autorzy:
Park, Ji-Young
Weon, Ye Bin
Jung, Myeong Jun
Choi, Byung Joon
Powiązania:
https://bibliotekanauki.pl/articles/2174578.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
zinc oxide
ZnO
atomic layer deposition
low temperature growth
optoelectronic properties
Opis:
Zinc oxide (ZnO) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of ZnO thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. However, the optical and electrical properties of ZnO films grown at low temperatures may be inferior owing to their low crystallinity and impurities. In this study, ZnO thin films were prepared by atomic layer deposition on SiO2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 1019 cm-3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin ZnO film reached approximately 90% under visible light irradiation. Additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of ZnO films grown at high temperature.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 4; 1503--1506
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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