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Wyszukujesz frazę "nanowire" wg kryterium: Temat


Wyświetlanie 1-11 z 11
Tytuł:
Effects of PVA Polymer Type and Calcination Temperature on Synthesis of Nanocrystalline Yttria Powder by Polymer Solution Route
Autorzy:
Yang, Y.-K.
Lee, S.-J.
Powiązania:
https://bibliotekanauki.pl/articles/356024.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
yttria
PVA
nanocrystalline
synthesis
nanowire
Opis:
Nano-sized yttria (Y2O3) powders were synthesized by a polymer solution route using polyvinyl alcohol (PVA) as an organic carrier. The PVA polymer affected the dispersion of yttrium ions in precursor sol. In this study, three kinds of PVA polymer (different molecular weight) were applied for synthesis of yttria powder. The PVA type as well as calcination temperature had a strongly influence on the particle morphology. Single crystal nano wire particles were observed at the temperature of polymer burn out range and the size was dependent on the PVA type. The stable, fully crystallized yttria powder was obtained through the calcination at 800°C for 1 h. The yttria powder prepared with the high weight PVA (MW: 153,000) revealed a particle size of 30 nm with a surface area of 18.8 m2/g.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 3; 1473-1476
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Degradation Behavior of Ag Nanowire-Coated Transparent Conductive Film
Autorzy:
Kim, Jae-Yeon
Kim, Hye-Young
Kim, Hyun-Su
Yoo, Ki-Tae
Yang, Won-Jon
Byeon, Jai-Won
Powiązania:
https://bibliotekanauki.pl/articles/354224.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silver nanowire
isothermal degradation
electrical resistance
overcoating
Opis:
For the reliable applications of silver nanowires, AgNW, which is used as a conductive transparent film in electronic devices, the isothermal degradation behaviors of AgNW films with and without overcoating were investigated. Accelerated isothermal degradation was performed as a function of temperature, time, and atmosphere. Electrical resistance and optical transmittance were measured and correlated with the microstructural damages, such as formation of oxide particles and fragmentations of AgNW, which were quantitatively determined from the scanning electron micrographs. The overcoating retarded the formation of oxide particles and subsequent fragmentations as well as resulting degradation in electrical resistance without affecting the optical transmittance.
Źródło:
Archives of Metallurgy and Materials; 2019, 64, 3; 913-916
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Square Ising Nanowire on the Bethe Lattice
Autorzy:
Albayrak, E.
Powiązania:
https://bibliotekanauki.pl/articles/1032327.pdf
Data publikacji:
2017-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
Bethe lattice
nanowire
phase diagrams
magnetization
tricritical
Opis:
The square-type nanowire is simulated on the Bethe lattice by using the core-shell structure consisting of the Ising spins. A nanoparticle is formed by placing a spin to the center and four others to the corners of a square. Then, each nanoparticle is combined with two neighboring ones with a perfect alignment of the squares to form the nanowire. Only nearest-neighbor spin interactions, either ferromagnetic or antiferromagnetic type, are allowed. The phase diagrams are calculated by studying the thermal variations of magnetizations for various values of bilinear interactions. It is found that the model gives both second- and first-order phase transitions in addition to the tricritical points and compensation temperatures.
Źródło:
Acta Physica Polonica A; 2017, 131, 6; 1470-1473
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single-electron transport characteristics in quantum dot arrays due to ionized dopants
Autorzy:
Moraru, D.
Ligowski, M.
Tarido, J. C.
Miki, S.
Nakamura, R.
Yokoi, K.
Mizuno, T.
Tabe, M.
Powiązania:
https://bibliotekanauki.pl/articles/384277.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
single dopant
silicon nanowire
single-electron transport
single-electron transfer
Opis:
Single charge manipulation for useful electronic functionalities has become an exciting and fast-paced direction of research in recent years. In structures with dimensions below about 100 nm, the physics governing the device operation turn out to be strikingly different than in the case of larger devices. The presence of even a single charge may completely suppress current flow due to the basic electronelectron repulsion (so called Coulomb blockade effect) [1]. It is even more exciting to control this effect at the level of single-electron/single-atom interaction. The atomic entity can be one donor present in silicon lattice with a Coulombic potential well. In principle, it can accommodate basically a single electron. We study the electrical behavior of nanoscale-channel silicon-on-insulator field-effect transistors (SOI-FETs) that contain a discrete arrangement of donors. The donors can be utilized as "stepping stones" for the transfer of single charges. This ability opens the doors to a rich world of applications based on the simple interplay of single charges and single atoms, while still utilizing mostly conventional and well established fabrication techniques. In this work, we distinguish the effects of single-electron transport mediated by one or few dopants only. Furthermore, we show how the single-electron/single-donor interaction can be tuned by using the external biases. We demonstrate then by simulation and experiment the feasibility of single-electron/bit transfer operation (single-electron turnstile).
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 52-54
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental investigation of Euler’s elastica: in-situ SEM nanowire post-buckling
Autorzy:
Manecka-Padaż, Aleksandra
Jenczyk, Piotr
Pęcherski, Ryszard B.
Nykiel, Anna
Powiązania:
https://bibliotekanauki.pl/articles/2173698.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
post-buckling
nanowire
nanomechanics
zachowanie po wyboczeniu
nanodrut
nanomechanika
Opis:
An in-situ nanoindenter with a flat tip was employed to conduct buckling tests of a single nanowire with simultaneous SEM imaging. A series of SEM images allowed us to calculate deflection. The deflection was confronted with the mathematical model of elastica. The post-buckling behaviour of nanowires is conducted in the framework of the nonlinear elasticity theory. Results show the significant effect of geometrical parameters on the stability of buckled nanowires.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2022, 70, 6; art. no. e143648
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Black Silicon Obtained in Two-Step Short Wet Etching as a Texture for Silicon Solar Cells - Surface Microstructure and Optical Properties Studies
Autorzy:
Kulesza-Matlak, G.
Gawlińska, K.
Starowicz, Z.
Sypień, A.
Drabczyk, K.
Drabczyk, B.
Lipiński, M.
Zięba, P.
Powiązania:
https://bibliotekanauki.pl/articles/352242.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
black silicon
low temperature texturization
silicon nanowire
solar cells
multicrystalline silicon
Opis:
In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 2; 1009-1017
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of hybrid Ge QDs/Si nanowires solar cell with improvement in cell efficiency
Autorzy:
Olyaee, S.
Farhadipour, F.
Powiązania:
https://bibliotekanauki.pl/articles/173979.pdf
Data publikacji:
2018
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
nanowire
absorption
FDTD
hybrid structure
thin-film
cylindrical quantum dots
Opis:
In this paper, the structure of a high-efficiency solar cell is presented by using a combination of quantum dots of germanium arrays and silicon nanowires on a thin film silicon layer. Due to the low absorption coefficient of silicon, this type of solar cell does not have high efficiency. According to the capability of the quantum structure in absorbing the incident photons and the generation of electron-hole pairs, this structure is proposed. Moreover, nanowires as an appropriate suggestion are applied in our work aiming to improve light scattering and optical photon absorption for the generation of carriers. Both of the electrical and optical characteristics of the solar cell are calculated by using a finite-difference time-domain method. Owing to the change of the nanowire length and increasing the number of quantum dot in our work, maximum power absorption is achieved. The achieved results provide a considerable improvement in efficiency and short-circuit current density. The efficiency is improved up to 17.5% and the short-circuit current density in the active layer of thickness 1170 nm has been provided to be 42.6 mA/cm2. The open circuit voltage for this cell is calculated to be 0.47 V. The achieved results provide a considerable improvement in efficiency and short-circuit current density in comparison with previously published method.
Źródło:
Optica Applicata; 2018, 48, 4; 633-645
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Instability Characteristics of Free-Standing Nanowires Based on the Strain Gradient Theory with the Consideration of Casimir Attraction and Surface Effects
Autorzy:
Sedighi, H. M.
Ouakad, H. M.
Khooran, M.
Powiązania:
https://bibliotekanauki.pl/articles/220374.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
free-standing cylindrical nanowire
Casimir force
proximity force approximation
Dirichlet asymptotic approximation
Opis:
Size-dependent dynamic instability of cylindrical nanowires incorporating the effects of Casimir attraction and surface energy is presented in this research work. To develop the attractive intermolecular force between the nanowire and its substrate, the proximity force approximation (PFA) for small separations, and the Dirichlet asymptotic approximation for large separations with a cylinder-plate geometry are employed. A nonlinear governing equation of motion for free-standing nanowires – based on the Gurtin-Murdoch model – and a strain gradient elasticity theory are derived. To overcome the complexity of the nonlinear problem in hand, a Garlerkin-based projection procedure for construction of a reduced-order model is implemented as a way of discretization of the governing differential equation. The effects of length-scale parameter, surface energy and vacuum fluctuations on the dynamic instability threshold and adhesion of nanowires are examined. It is demonstrated that in the absence of any actuation, a nanowire might behave unstably, due to the Casimir induction force.
Źródło:
Metrology and Measurement Systems; 2017, 24, 3; 489-507
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Symulacja obwodu z kwantowaną przewodnością
Simulation of circuit with quantized conductance
Autorzy:
Michalak, S.
Powiązania:
https://bibliotekanauki.pl/articles/154907.pdf
Data publikacji:
2007
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
kwantowanie przewodności
poziom kwantowy
nanodrut
modelowanie
symulacja
APLAC
quantized conductance
quantum level
nanowire
modeling
simulation
Opis:
W pracy przedstawiono model kwantowanej przewodności zrealizowany w środowisku symulacyjnym APLAC. Model kwantowanej przewodności oparty został na istniejących w programie modelach rezystora oraz przełącznika. Wykorzystano właściwości tych modeli odpowiednio modyfikując wartości ich parametrów tak, aby uzyskać efekt rozwierania styków i powstawania nanodrutów, oraz odwzorować zjawisko skokowej zmiany rezystancji (kwantowa zmiany przewodności). Przedstawiono wyniki symulacji komputerowej obwodu z zamodelowanym elementem zestyku o charakterze nanodrutu. Analizowano warunki zmiany charakteru układu pomiarowego z aperiodycznego w oscylacyjny.
In this paper APLAC user model of quantized conductance was described. This model is based on resistor model and switch model included in APLAC. Proprieties of these models were modified to get an unshort contacts effect and simulate creating nanowire effect to show phenomenon quantum conductance. The simulation results of circuit with model of quantum conductance were described. Used model simulate quantum conductance effect, which can be observed between two metal wires during unclenching. Conditions of creating periodic and non-periodic character of circuit were studied.
Źródło:
Pomiary Automatyka Kontrola; 2007, R. 53, nr 9 bis, 9 bis; 86-88
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badania wybranych właściwości wysokodyspersyjnych napoin wytworzonych techniką laserową przeznaczonych na elementy maszyn o podwyższonej odporności na zużycie w warunkach tarcia
The investigation of chosen properties of high dispersion padding welds produced the laser technique of designed on units machine engines about raised resistance on waste in the conditions of the friction
Autorzy:
Napadłek, W.
Laber, A.
Powiązania:
https://bibliotekanauki.pl/articles/188834.pdf
Data publikacji:
2010
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
stal kwasoodporna
nanodrut proszkowy
napoina laserowa
mikrostruktura
skład chemiczny
mikrotwardość
acid resistant steel
pulveraceous nanowire
laser padd weld
microstructure
chemical composition
microhardness
Opis:
W pracy przedstawiono wybrane wyniki badań laboratoryjnych w zakresie wytwarzania wysokodyspersyjnych napoin z nanodrutu proszkowego Castolin EnDOtec DO390N na stali kwasoodpornej 0H18N9 z wykorzystaniem techniki laserowej. Przedstawiono topografię powierzchni lica napoin dla wybranych parametrów obróbki laserowej. Ze względu na specyficzny skład chemiczny stali kwasoodpornej oraz materiału napoiny, a także duży szok termiczny, jaki powstał w procesie napawania laserowego stwierdzono liczne makro- i mikropęknięcia napoiny. Badania mikrostruktury wykazały wysokodyspersyjną mikro- i nanostrukturę, w której cząstki faz węglików (MC) o dużej objętości, węglików boru M23(BC) oraz borków M2B są rozmieszczone w drobnoziarnistej osnowie żelaza. Ze względu na kilkukrotne przetapianie laserowe warstwy napoiny stwierdzono duże zróżnicowanie składu chemicznego w mikro-obszarach oraz dużą niejednorodność mikrostruktury. Twardość powierzchni ww. napoiny wynosiła 68–72 HRC. Pomiary mikrotwardości w przekroju poprzecznym wykazały bardzo wysokie wartości wynoszące nawet 990–1100 HV0,1. Uzyskane wyniki nie są zadowalające ze względu na liczne mikropęknięcia, dlatego należy prowadzić dalsze badania laboratoryjne nad opracowaniem technologii mikroonapawania laserowego z użyciem nanodrutów proszkowych o małych średnicach (0,6–0,8 mm).
The chosen results of laboratory investigations were introduced in the work in the range productions of high disprsion pad welds from nanowires pulveraceous Castolin EnDOtec DO390 N on acid-resistant steel 0 H18 N9 with utilization of the laser technique. The topographies of the surface of grain napoin for the chosen parameters of the laser processing were introduced. Acid-resistant and the material pad weld lies because of specific chemical type- matter, and also large what thermal shock came into being in the process of filling with of the laser the numerous macro was affirmed- and microhardness pad weld. High dispersion pad weld showed the audits of microstructure- and nanostucture in which particles of phaze of carbides (MC) about large volume, the carbides of the forest M23(BC) and borides M2B are disposed in the fine-grained warp irons. Laser layers pad weld because of kilkukrotne melting were affirmed the large differentiation of the chemical composition in microzones and the large inhomogeneity of microstructure. 68-72 HRC carried out the hardness of the surface pad weld. The measurements of microhardness in the transverse section showed very high values carrying out even 990 – 1100 HV0,1. Got results zadawalające are not because of numerous microbroken, that is why you should lead farther laboratory audits over the study of the technology laser micro pad welding ia with the use of pulveraceous nanowires about small diameters (0,6 – 0,8 mm).
Źródło:
Tribologia; 2010, 5; 21-36
0208-7774
Pojawia się w:
Tribologia
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Challenges for 10 nm MOSFET process integration
Autorzy:
Östling, M.
Malm, B. G.
Haartman, M.
Hallstedt, J.
Zhang, Z.
Hellström, P. E.
Zhang, S.
Powiązania:
https://bibliotekanauki.pl/articles/309004.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
sstrained silicon
silicon-germanium
silicon-on-insulator (SOI)
high-k dielectrics
hafnium oxide
nanowire
low frequency noise
mobility
metal gate
Opis:
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 2; 25-32
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-11 z 11

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