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    Wyświetlanie 1-3 z 3
    Tytuł:
    Fabrication and Characterization of Porous Silicon
    Autorzy:
    Duaa, Jabbar Hussein
    Alzubaidy, Muneer H. Jaduaa
    Abd, Ahmed N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1157178.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Anodization
    Nanocrystalline porous silicon
    XRD
    porous silicon
    Opis:
    In this work, nanocrystalline porous silicon layers were fabricated by photoelectrochemical etching of n type silicon (n-Si) wafer. Different etching time (15, 20, 25 and 30) min and 10 mA/cm2 current density were tested to study their effect on the formation nanosized pore array. Porous silicon is investigation by X-Ray diffractions (XRD) and atomic force microscopy properties (AFM). Crystallites size was estimated by X-Ray diffraction. Atomic Force microscopy confirmed the nonmetric size Chemical Anodization the electrochemical etching was noticed of PS. The atomic force microscopy investigation showed the rough silicon surface which increased with etching time porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
    Źródło:
    World Scientific News; 2018, 94, 2; 321-328
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porous silicon: fabrication, characterization and photoelectronic applications
    Autorzy:
    Shuihab, Aliyah A.
    Khalf, Surour A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177955.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Anodization
    FTIR & AFM
    Nanocrystalline porous silicon
    XRD
    porosity
    porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PS) films are prepared by electrochemical etching of p-type silicon wafer with current density (15 mA/cm2) and etching times on the formation nanosized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nano scale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a -Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 97; 264-273
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
    Autorzy:
    Abd, Ahmad Naji
    Mishjil, Khudheir A.
    Abdulsada, Ali Hamid
    Habubi, N. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177996.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AFM
    FTIR
    TiO2
    X-Ray diffraction
    XRD
    electrochemical etching p-type silicon wafer
    nanocrystalline porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 96; 134-148
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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