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    Wyświetlanie 1-6 z 6
    Tytuł:
    Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
    Autorzy:
    Martyniuk, P.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/201922.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    barrier detectors
    unipolar barrier
    nBn
    HgCdTe
    photodetectors
    Opis:
    The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system
    Autorzy:
    Ciura, Ł.
    Kolek, A.
    Gawron, W.
    Kowalewski, A.
    Stanaszek, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/221094.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    1/f noise
    infrared detectors
    nBn structure
    HgCdTe heterostructures
    noise measurements
    transimpedance detection system
    type II InAs/GaSb superlattice
    Opis:
    The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 461-472
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical Calculations for Elastic and Thermodynamic Properties of NbN₂ under High Pressure
    Autorzy:
    Hou, Bao-Sen
    Liu, Ke
    Mao, Xiao-Chun
    Tan, Jiao
    Zhou, Xiao-Lin
    Powiązania:
    https://bibliotekanauki.pl/articles/1032591.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    high temperature and high pressure
    elastic constants
    anisotropy
    Debye temperature
    NbN₂
    Opis:
    The structural and elastic properties of NbN₂ at high pressures were investigated through the first-principles calculation. Results indicate that NbN₂ is a potential hard material. NbN₂ meets mechanical stability criteria and possesses ductility within the pressure of 100 GPa. The elastic anisotropy under high pressure was achieved by the elastic anisotropy factors, which reduce with increasing pressure. Using the quasi-harmonic Debye model, we also investigated the thermodynamic properties of NbN₂.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1363-1370
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
    Autorzy:
    Gomółka, E.
    Markowska, O.
    Kopytko, M.
    Kowalewski, A.
    Martyniuk, P.
    Rogalski, A.
    Rutkowski, J.
    Motyka, M.
    Krishna, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/201992.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    InAs/GaSb type-II superlattices
    infrared detectors
    barrier detectors
    nBn detector
    p-i-n detector
    InAs
    GaSb
    detektory podczerwieni
    detektor bariery
    detektor nBn
    detektory p-i-n
    Opis:
    We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 3; 317-323
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Study of the Influence of Architecture on Effectiveness of Deep Neural Networks Training
    Badania wpływu architektury na skuteczność uczenia głębokich sieci neuronowych
    Autorzy:
    Kolbusz, Janusz
    Różycki, Paweł
    Bartczak, Tomasz
    Powiązania:
    https://bibliotekanauki.pl/articles/509270.pdf
    Data publikacji:
    2018
    Wydawca:
    Akademia Finansów i Biznesu Vistula
    Tematy:
    deep learning
    ANN architectures
    Bridged MLP
    NBN
    uczenie głębokie
    architektury sztucznych sieci neuronowych
    Opis:
    Paper presents impact of the neural network architecture on the training effectiveness and training time. Selected network architectures and training algorithm are described. Presented experimental results of research confirming the significant influence of architecture on the success of network training.
    W artykule przedstawiono wpływ architektury sieci neuronowej na skuteczność i czas uczenia sieci. Opisano wybrane architektury sieci, algorytm uczenia oraz zaprezentowano wyniki badań potwierdzających znaczący wpływ architektury na sukces uczenia sieci.
    Źródło:
    Zeszyty Naukowe Uczelni Vistula; 2018, 59(2) Informatyka; 60-71
    2353-2688
    Pojawia się w:
    Zeszyty Naukowe Uczelni Vistula
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advances in type-II superlattice research at Fraunhofer IAF
    Autorzy:
    Müller, Raphael
    Daumer, Volker
    Hugger, Tsvetelina
    Kirste, Lutz
    Luppold, Wolfgang
    Niemasz, Jasmin
    Rehm, Robert
    Stadelmann, Tim
    Wobrock, Mark
    Yang, Quankui
    Powiązania:
    https://bibliotekanauki.pl/articles/2204206.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    metastructures for QE enhancement
    MWIR Ga-free T2SL nBn detectors
    MWIR/LWIR dual-band technology
    Opis:
    Current advances in type-II superlattice (T2SL) research at Fraunhofer IAF are elaborated on in this paper. First, the use of metastructures for quantum efficiency (QE) enhancement in the longwave infrared (LWIR) is presented. Finite element modelling results are reported on that suggest a potential for doubling of the QE at certain wavelengths with the investigated device structure. Next, characterisation results of midwave infrared (MIWR) InAs/InAsSb T2SL nBn detectors are shown. The low, diffusion-limited dark current above 120 K and a QE of 60% are comparable to the state-of-the-art. Finally, groundwork for InAs/GaSb T2SL MWIR/LWIR dual-band detector arrays based on a back-to-back heterojunction diode device concept is presented. The dry etching technology allows for steep etch trenches and full pixel reticulation with a fill factor of about 70% at 12 μm pitch. The detector characterisation at 77 K and ±250 mV bias demonstrates the bias-switchable operation mode with dark current densities of 6.1·10ˉ⁹ A/cm² in the MWIR and 5.3·10ˉ⁴ A/cm² in the LWIR.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144553
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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