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Wyświetlanie 1-6 z 6
Tytuł:
Advances in type-II superlattice research at Fraunhofer IAF
Autorzy:
Müller, Raphael
Daumer, Volker
Hugger, Tsvetelina
Kirste, Lutz
Luppold, Wolfgang
Niemasz, Jasmin
Rehm, Robert
Stadelmann, Tim
Wobrock, Mark
Yang, Quankui
Powiązania:
https://bibliotekanauki.pl/articles/2204206.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
metastructures for QE enhancement
MWIR Ga-free T2SL nBn detectors
MWIR/LWIR dual-band technology
Opis:
Current advances in type-II superlattice (T2SL) research at Fraunhofer IAF are elaborated on in this paper. First, the use of metastructures for quantum efficiency (QE) enhancement in the longwave infrared (LWIR) is presented. Finite element modelling results are reported on that suggest a potential for doubling of the QE at certain wavelengths with the investigated device structure. Next, characterisation results of midwave infrared (MIWR) InAs/InAsSb T2SL nBn detectors are shown. The low, diffusion-limited dark current above 120 K and a QE of 60% are comparable to the state-of-the-art. Finally, groundwork for InAs/GaSb T2SL MWIR/LWIR dual-band detector arrays based on a back-to-back heterojunction diode device concept is presented. The dry etching technology allows for steep etch trenches and full pixel reticulation with a fill factor of about 70% at 12 μm pitch. The detector characterisation at 77 K and ±250 mV bias demonstrates the bias-switchable operation mode with dark current densities of 6.1·10ˉ⁹ A/cm² in the MWIR and 5.3·10ˉ⁴ A/cm² in the LWIR.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144553
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system
Autorzy:
Ciura, Ł.
Kolek, A.
Gawron, W.
Kowalewski, A.
Stanaszek, D.
Powiązania:
https://bibliotekanauki.pl/articles/221094.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
1/f noise
infrared detectors
nBn structure
HgCdTe heterostructures
noise measurements
transimpedance detection system
type II InAs/GaSb superlattice
Opis:
The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 461-472
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
Autorzy:
Gomółka, E.
Markowska, O.
Kopytko, M.
Kowalewski, A.
Martyniuk, P.
Rogalski, A.
Rutkowski, J.
Motyka, M.
Krishna, S.
Powiązania:
https://bibliotekanauki.pl/articles/201992.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
InAs/GaSb type-II superlattices
infrared detectors
barrier detectors
nBn detector
p-i-n detector
InAs
GaSb
detektory podczerwieni
detektor bariery
detektor nBn
detektory p-i-n
Opis:
We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 3; 317-323
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Study of the Influence of Architecture on Effectiveness of Deep Neural Networks Training
Badania wpływu architektury na skuteczność uczenia głębokich sieci neuronowych
Autorzy:
Kolbusz, Janusz
Różycki, Paweł
Bartczak, Tomasz
Powiązania:
https://bibliotekanauki.pl/articles/509270.pdf
Data publikacji:
2018
Wydawca:
Akademia Finansów i Biznesu Vistula
Tematy:
deep learning
ANN architectures
Bridged MLP
NBN
uczenie głębokie
architektury sztucznych sieci neuronowych
Opis:
Paper presents impact of the neural network architecture on the training effectiveness and training time. Selected network architectures and training algorithm are described. Presented experimental results of research confirming the significant influence of architecture on the success of network training.
W artykule przedstawiono wpływ architektury sieci neuronowej na skuteczność i czas uczenia sieci. Opisano wybrane architektury sieci, algorytm uczenia oraz zaprezentowano wyniki badań potwierdzających znaczący wpływ architektury na sukces uczenia sieci.
Źródło:
Zeszyty Naukowe Uczelni Vistula; 2018, 59(2) Informatyka; 60-71
2353-2688
Pojawia się w:
Zeszyty Naukowe Uczelni Vistula
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Calculations for Elastic and Thermodynamic Properties of NbN₂ under High Pressure
Autorzy:
Hou, Bao-Sen
Liu, Ke
Mao, Xiao-Chun
Tan, Jiao
Zhou, Xiao-Lin
Powiązania:
https://bibliotekanauki.pl/articles/1032591.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
high temperature and high pressure
elastic constants
anisotropy
Debye temperature
NbN₂
Opis:
The structural and elastic properties of NbN₂ at high pressures were investigated through the first-principles calculation. Results indicate that NbN₂ is a potential hard material. NbN₂ meets mechanical stability criteria and possesses ductility within the pressure of 100 GPa. The elastic anisotropy under high pressure was achieved by the elastic anisotropy factors, which reduce with increasing pressure. Using the quasi-harmonic Debye model, we also investigated the thermodynamic properties of NbN₂.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1363-1370
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
Autorzy:
Martyniuk, P.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/201922.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
barrier detectors
unipolar barrier
nBn
HgCdTe
photodetectors
Opis:
The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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