- Tytuł:
- Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
- Autorzy:
-
Martyniuk, Piotr
Benyahia, Djalal - Powiązania:
- https://bibliotekanauki.pl/articles/2204216.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
molecular beam epitaxy
superlattice
X-ray diffraction
III-V semiconductor - Opis:
- Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
- Źródło:
-
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł