Temat: molecular beam epitaxy - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
Autorzy:: Nowakowski-Szkudlarek, Krzesimir
Muziol, Grzegorz
Żak, Mikolaj
Hajdel, Mateusz
Siekacz, Marcin
Feduniewicz-Żmuda, Anna
Skierbiszewski, Czesław
Powiązania:: https://bibliotekanauki.pl/articles/173471.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: gallium nitride
molecular beam epitaxy
contacts
Opis:: We investigated the influence of the In_0.17Ga_0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In_0.17Ga_0.83N:Mg contact layer with Mg doping levelas high as 2 × 10²⁰ cm^–3.
Źródło:: Optica Applicata; 2020, 50, 2; 323-330
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors
Autorzy:: Martyniuk, Piotr
Benyahia, Djalal
Powiązania:: https://bibliotekanauki.pl/articles/2204216.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: molecular beam epitaxy
superlattice
X-ray diffraction
III-V semiconductor
Opis:: Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 μm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.
Źródło:: Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144557
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

Artykuł

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