Temat: microwave devices - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs
Autorzy:: Goffioul, M.
Vanhoenacker, D.
Raskin, J.P.
Powiązania:: https://bibliotekanauki.pl/articles/309316.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microelectronics
microwave devices
SOI MOSFET
Opis:: Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 59-66
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs
Autorzy:: Goffioul, M.
Dambrine, G.
Vanhoenacker, D.
Raskin, J.P.
Powiązania:: https://bibliotekanauki.pl/articles/309323.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microelectronics
microwave devices
SOI MOSFET
Opis:: The high frequency performances including microwave noise parameters for sub-quarter micron fully- (FD and partially-depleted (PD) silicon-on-insulator (SOI) n-MOSFETs are described and compared. Direct extraction techniques based on the physical meaning of each small-signal and noise model element are used to extract the microwave characteristics of various FD and PD SOI n-MOSFETs with different channel lenghts and widths. TiSi2 silicidation process has been demonstrated very efficient to reduce the sheet and contact resistances of gate, source and drain transistor regions. 0.25 žm FD SOI n-MOSFETs with a total gate width of 100 žm present a state-of-the-art minimum noise figure of 0.8 dB and high associated gain of 13 dB at 6 GHz for V(ds) = 0.75 V and P(dc) < 3 mW. A maximum extrapolated oscillation frequency of about 70 GHz has been obtained at V(ds) = 1 V and J(ds) = 100 mA/mm. This new generation of MOSFETs presents very good analogical and digital high speed performances with a low power consumption which make them extremely attractive for high frequency portable applications such as the wireless communications.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 72-80
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Evolution and recent advances in RF/microwave transistors
Autorzy:: Liou, J.J.
Schwierz, F.
Powiązania:: https://bibliotekanauki.pl/articles/308200.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microwave devices
RF devices
heterostructures
HEMT
HBT
frequency limits
RF CMOS
Opis:: Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 99-105
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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