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Tytuł:
FET input voltage amplifier for low frequency noise measurements
Autorzy:
Achtenberg, Krzysztof
Mikołajczyk, Janusz
Bielecki, Zbigniew
Powiązania:
https://bibliotekanauki.pl/articles/221854.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low noise amplifier
low frequency noise measurements
field effect transistors
FET voltage noise
FET input amplifier
Opis:
The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp trans impedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√Hz, 3 nV/√Hz, 0.95 nV/√Hz and 0.6 nV/√Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A -3dB frequency response is from ~20 mHz to ~600 kHz.
Źródło:
Metrology and Measurement Systems; 2020, 27, 3; 531-540
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise spectroscopy of resistive components at elevated temperature
Autorzy:
Stadler, A.W.
Zawiślak, Z.
Dziedzic, A.
Nowak, D.
Powiązania:
https://bibliotekanauki.pl/articles/221348.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
noise spectroscopy
low-frequency noise
resistance noise
low-frequency noise measurements
thick-film resistors
Opis:
Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
Źródło:
Metrology and Measurement Systems; 2014, 21, 1; 15-26
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zastosowanie tzw. cichych nawierzchni drogowych jako sposób na obniżenie poziomu hałasu w uzdrowiskach
Autorzy:
Czarnecki, Sławomir
Powiązania:
https://bibliotekanauki.pl/articles/1399464.pdf
Data publikacji:
2017-12-29
Wydawca:
Stowarzyszenie Gmin Uzdrowiskowych RP
Tematy:
uzdrowisko, hałas,
cicha nawierzchnia drogowa
health resort, noise,
low-noise pavement
Opis:
Problem nadmiernego poziomu hałasu w uzdrowiskach jest od dawna podnoszony w piśmiennictwie. Ostatnio zwróciła na niego uwagę Najwyższa Izba Kontroli. W opracowaniu autor podejmuje próbę udzielenia odpowiedzi na pytanie, czy do rozwiązania tego problemu może się przyczynić zastosowanie tzw. cichych nawierzchni drogowych.
The problem of excessive noise levels in health resorts has long been raised in the literature. Recently, the Supreme Chamber of Control has paid attention to it. In the paper, the author attempts to answer the question whether the application of the so-called low-noise pavements is a good way to solve this problem.
Źródło:
Biuletyn Uzdrowiskowy; 2017, 4; 27-34
2543-9766
Pojawia się w:
Biuletyn Uzdrowiskowy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design and Noise Analysis of a Novel Auto-Zeroing Structure for Continuous-Time Instrumentation Amplifiers
Autorzy:
Maréchal, S.
Nys, O.
Krummenacher, F.
Chevroulet, M.
Kayal, M.
Powiązania:
https://bibliotekanauki.pl/articles/226106.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
front-end
instrumentation amplifier
low-noise
low power
chopper
auto-zero
Opis:
This paper introduces a low-noise, low-power amplifier for high-impedance sensors. An innovative circuit using an auto-zeroed architecture combined with frequency modulation to reject offset and low-frequency noise is proposed and analysed. Special care was given to avoid broadband noise aliasing and chopping in the signal path, and to minimize both the resulting equivalent input offset voltage and equivalent input biasing current. The theoretical noise analysis of the proposed topology covers most of the noise sources of the circuit. Simulations show that the input-referred noise level of the circuit is 13.4nV/√Hz for a power consumption of 85µA with a power supply from 1.8V to 3.6V.
Źródło:
International Journal of Electronics and Telecommunications; 2013, 59, 4; 397-404
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
64 Channel ASIC for Neurobiology Experiments
Autorzy:
Gryboś, P.
Kmon, P.
Szczygieł, R.
Żołądź, M.
Powiązania:
https://bibliotekanauki.pl/articles/226849.pdf
Data publikacji:
2010
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low noise amplifier
neural recording
ASIC
multichannel systems
neurobiology experiments
Opis:
This paper presents the design and measurements of 64 channel Application Specific Integrated Circuits (ASIC) for recording signals in neurobiology experiments. The ASIC is designed in 180 nm technology and operates with ± 0.9 V supply voltage. Single readout channel is built of AC coupling circuit at the input and two amplifier stages. In order to reduce the number of output lines, the 64 analogue signals from readout channels are multiplexed to a single output by an analogue multiplexer. The gain of the single channel can be set either to 350 V/V or 700 V/V. The low and the high cut-off frequencies can be tuned in 9 ÷ 90 Hz and in the 1.6 ÷ 24 kHz range respectively. The input referred noise is 7 µV rms in the bandwidth 90 Hz - 1.6 kHz and 9 µ V rms in the bandwidth 9 Hz - 24 kHz. The single channel consumes 200 µW of power and this together with other parameters make the chip suitable for recording neurobiology signals.
Źródło:
International Journal of Electronics and Telecommunications; 2010, 56, 4; 375-380
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Study of Annoyance Caused by Low-Frequency Noise During Mental Work
Autorzy:
Kaczmarska, A.
Łuczak, A.
Powiązania:
https://bibliotekanauki.pl/articles/89879.pdf
Data publikacji:
2007
Wydawca:
Centralny Instytut Ochrony Pracy
Tematy:
low-frequency noise
annoyance
working environments
Opis:
This article presents the results of an analysis of annoyance caused by low-frequency noise (including infrasonic noise) that occurs at work stations located in offices. The tests covered measurements of acoustic parameters specific for this type of noise and a survey conducted in the working environment and in laboratory conditions at a model of a work station.
Źródło:
International Journal of Occupational Safety and Ergonomics; 2007, 13, 2; 117-125
1080-3548
Pojawia się w:
International Journal of Occupational Safety and Ergonomics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of current noise in MOSFET-based charge-transfer device
Autorzy:
Inokawa, H.
Singh, V.
Satoh, H.
Powiązania:
https://bibliotekanauki.pl/articles/385224.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
low-frequency noise
MOSFET
charge-transfer device
Opis:
Low-frequency current noise in the MOSFET-based charge-transfer devices was evaluated at room and cryogenic temperatures. Excessive noise, whose power was 25-50 times larger than that of room temperature, was observed at 20 K, and this hindered the accurate transfer of charge. Interestingly, the noise power was proportional to the square of the pulse frequency that drove the gates in these devices, and an expression for the noise was proposed to correlate it with the frequency, gate capacitance and fluctuation of the threshold voltage at the gate.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 72-75
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Four-point probe resistivity noise measurements of GaSb layers
Autorzy:
Ciura, L.
Kolek, A.
Smoczyński, D.
Jasik, A.
Powiązania:
https://bibliotekanauki.pl/articles/201503.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low frequency noise
GaSb noise
noise measurements
resistance noise calculation
Opis:
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described. The gain calculations for local resistance noise are performed to evaluate the contribution to total noise from different areas of the layer. It was shown, through numerical calculations and noise measurements, that in four-point probe specimens, with separated current and voltage terminals, the non-resistance noise of the contact and the resistance noise of the layer can be identified. The four-point probe method is used to find the low frequency resistance noise of the GaSb layer with a different doping type. For n-type and p-type GaSb layers with low carrier concentrations, the measured noise is dominated by the non-resistance noise contributions from contacts. Low frequency resistance noise was identified in high-doped GaSb layers (both types). At room temperature, such resistance noise in an n-type GaSb layer is significantly larger than for p-type GaSb with comparable doping concentration.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 135-140
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reduction of random telegraph signal (RTS) noise in CMOS image sensors using histogram analysis
Autorzy:
bin Mustafa, M. A.
Itoh, S.
Kawahito, S.
Powiązania:
https://bibliotekanauki.pl/articles/385238.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
histogram analyses
random telegraph signal (RTS) noise
CMOS image sensor
low-noise
estimated amplitude
Opis:
The paper presents column parallel signal processing techniques for reducing Random Telegraph Signal (RTS) noise of in-pixel source follower by using histogram analysis for the development of a very low-noise CMOS image sensor. In this method, a histogram with multiple samples for reset level is used to estimate the amplitude of the RTS noise. With the median of the histogram and the estimated amplitude, the RTS noise components are removed and the average is calculated with the histogram due to thermal noise only, to further reduce the noise level. Result of the application of the histogram-based noise suppres-sion to an implemented CMOS image sensor prototype for a large sampling numbers is demonstrated.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 202-203
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
64 channel neural recording amplifier with tunable bandwidth in 180 nm CMOS technology
Autorzy:
Gryboś, P.
Kmon, P.
Żołądź, M.
Szczygieł, R.
Kachel, M.
Lewandowski, M.
Błasiak, T.
Powiązania:
https://bibliotekanauki.pl/articles/220527.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
neurobiological measurements
low noise amplifier
neural recording
band-pass filter
multichannel ASIC
Opis:
This paper presents the design and measurements of low-noise multichannel front-end electronics for recording extra-cellular neuronal signals using microelectrode arrays. The integrated circuit contains 64 readout channels and is fabricated in CMOS 180 nm technology. A single readout channel is built of an AC coupling circuit at the input, a low-noise preamplifier, a band-pass filter and a second amplifier. In order to reduce the number of output lines, the 64 analog signals from readout channels are multiplexed to a single output by an analog multiplexer. The chip is optimized for low noise and good matching performance and has the possibility of passband tuning. The low cut-off frequency can be tuned in the 1 Hz - 60 Hz range while the high cut-off frequency can be tuned in the 3.5 kHz - 15 kHz range. For the nominal gain setting at 44 dB and power dissipation per single channel of 220 žW, the equivalent input noise is in the range from 6 žV - 11 žV rms depending on the band-pass filter settings. The chip has good uniformity concerning the spread of its electrical parameters from channel to channel. The spread of the gain calculated as standard deviation to mean value is about 4.4% and the spread of the low cut-off frequency set at 1.6 Hz is only 0.07 Hz. The chip occupies 5×2.3 mm⊃2 of silicon area. To our knowledge, our solution is the first reported multichannel recording system which allows to set in each recording channel the low cut-off frequency within a single Hz with a small spread of this parameter from channel to channel. The first recordings of action potentials from the thalamus of the rat under urethane anesthesia are presented.
Źródło:
Metrology and Measurement Systems; 2011, 18, 4; 631-643
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Katalog przemysłowych zabezpieczeń przed hałasem infradźwiękowym i niskoczęstotliwościowym
Catalogue of noise control measures in low frequency range
Autorzy:
Kaczmarska, A.
Augustyńska, D.
Engel, Z.
Powiązania:
https://bibliotekanauki.pl/articles/181243.pdf
Data publikacji:
2002
Wydawca:
Centralny Instytut Ochrony Pracy
Tematy:
hałas
hałas infradźwiękowy
hałas niskoczęstotliwościowy
noise
infrasound noise
low frequency noise
Opis:
Artykuł przedstawia katalog wybranych przemysłowych zabezpieczeń przed hałasem infradźwiękowym i niskoczęstotliwościowym. Przedstawiono parametry akustyczne materiałów, wyrobów i elementów stosowanych do ochrony przed hałasem niskoczęstotliwościowym.
This paper shall be presented catalogue of industrial noise control measures in low frequency range. Acoustic properties of the materials, goods and structures designed to protect from low frequency noise have bean determined in this paper.
Źródło:
Bezpieczeństwo Pracy : nauka i praktyka; 2002, 6; 24-25
0137-7043
Pojawia się w:
Bezpieczeństwo Pracy : nauka i praktyka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acoustic Study of REpower MM92 Wind Turbines During Exploitation
Autorzy:
Kłaczyński, M.
Wszołek, T.
Powiązania:
https://bibliotekanauki.pl/articles/177881.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
wind turbine noise
low frequency noise
airfoil self noise
measurements assessment
Opis:
The paper presents the current state of knowledge concerning the sources of noise generated by wind turbines, force measurement methodology, and assessment of noise onerousness in this type of installation, on the basis of a study concerning a wind farm with five REpower MM92 wind turbines and the electric power of 2 MW and the sound power level of 104.2 dB(A) each. Particular attention was focused on the often discussed problem of presence of infrasound generated by turbines and on the requirements of the applicable reference methodologies for the measurement of wind speed to 5 m/s, while the turbine reaches its full power at speeds above 10 m/s.
Źródło:
Archives of Acoustics; 2014, 39, 1; 3-10
0137-5075
Pojawia się w:
Archives of Acoustics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low frequency noise in advanced Si bulk and SOI MOSFETs
Autorzy:
Jomaah, J.
Balestra, F.
Ghibaudo, G.
Powiązania:
https://bibliotekanauki.pl/articles/308980.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
CMOS
SOI
low frequency noise
kink-related excess noise
DTMOS
Opis:
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental data obtained on advanced CMOS SOI and Si bulk generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown. The main physical characteristics of random telegraph signals (RTS) observed in small area MOS transistors are reviewed. Experimental results obtained on 0.35-0.12 žm CMOS technologies are used to predict the trends for the noise in future CMOS technologies, e.g., 0.1 žm and beyond. For SOI MOSFETS, the main types of layout will be considered, that is floating body, DTMOS, and body-contact. Particular attention will be paid to the floating body effect that induces a kink-related excess noise, which superimposes a Lorentzian spectrum on the flicker noise.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 24-33
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise Properties of Graphene-Polymer Thick-Film Resistors
Autorzy:
Mleczko, K.
Ptak, P.
Zawiślak, Z.
Słoma, M.
Jakubowska, M.
Kolek, A.
Powiązania:
https://bibliotekanauki.pl/articles/220754.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
graphene
polymer thick-film resistor
low-frequency noise
noise measurements
Opis:
Graphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.
Źródło:
Metrology and Measurement Systems; 2017, 24, 4; 589-594
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Sound Radiation From a Circular Hatchway
Autorzy:
Arenas, J. P.
Powiązania:
https://bibliotekanauki.pl/articles/89797.pdf
Data publikacji:
2009
Wydawca:
Centralny Instytut Ochrony Pracy
Tematy:
low-frequency noise
sound radiation
circular plate
hatchway
Opis:
Low-frequency sound radiation from vibrating plates is a practical problem often found in engineering applications. In this article, the sound radiation from a circular hatchway is examined using a discrete approach based in the acoustic resistance matrix. Since this matrix can be combined with the volume velocity vector on the discretized vibrating circular surface, the sound radiation efficiency can be estimated through matrix approaches. The limitation of the approach is discussed by using benchmark results presented in previous works. The method produces acceptable results in low frequencies when the response of the plate is dominated by one low structural mode. When the response of more than one mode is significant, the method gives good estimation of the total sound power just for frequencies up to the first resonance. However, the method can be applied to complex and irregular vibrating plane surfaces.
Źródło:
International Journal of Occupational Safety and Ergonomics; 2009, 15, 4; 401-407
1080-3548
Pojawia się w:
International Journal of Occupational Safety and Ergonomics
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 64

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