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    Wyświetlanie 1-3 z 3
    Tytuł:
    Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
    Autorzy:
    Alchaar, Rodolphe
    Rodriguez, Jean-Baptiste
    Höglund, L.
    Naureen, Shagufta
    Costard, Eric
    Christol, Philippe
    Powiązania:
    https://bibliotekanauki.pl/articles/1818240.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    barrier photodetector
    InAs/GaSb type-2 superlattice
    long wavelength infrared
    performance analysis
    Opis:
    In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 164--170
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
    Autorzy:
    Alchaar, R.
    Rodriguez, J.-B.
    Höglund, L.
    Naureen, S.
    Costard, E.
    Christol, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1818247.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    barrier photodetector
    InAs/GaSb type-2 superlattice
    long wavelength infrared
    performance analysis
    Opis:
    In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 164--170
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
    Autorzy:
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Kattner, Michael
    Frey, Philip
    Nelson, Scott A.
    Flick, Ryan
    Wu, Ying
    Liu, Amy W. K.
    Szymanski, Dennis E.
    Martinez, Becky
    Furlong, Mark J.
    Dennis, Richard
    Bundas, Jason
    Sundaram, Mani
    Powiązania:
    https://bibliotekanauki.pl/articles/2204213.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    focal plane arrays
    InAs/InAsSb
    photodetectors
    long wavelength infrared type-II superlattice
    metamorphic buffers
    superlattice period reduction
    Opis:
    Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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