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    Tytuł:
    Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays
    Autorzy:
    James, Jonathan Ch.
    Haran, Terence L.
    Lane, Sarah E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2204205.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared focal plane arrays
    III-V semiconductor infrared detector technologies
    infrared sensor performance modelling
    infrared sensor design
    mid-wave and longwave infrared sensors
    Opis:
    Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144570
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
    Autorzy:
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Kattner, Michael
    Frey, Philip
    Nelson, Scott A.
    Flick, Ryan
    Wu, Ying
    Liu, Amy W. K.
    Szymanski, Dennis E.
    Martinez, Becky
    Furlong, Mark J.
    Dennis, Richard
    Bundas, Jason
    Sundaram, Mani
    Powiązania:
    https://bibliotekanauki.pl/articles/2204213.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    focal plane arrays
    InAs/InAsSb
    photodetectors
    long wavelength infrared type-II superlattice
    metamorphic buffers
    superlattice period reduction
    Opis:
    Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

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