- Tytuł:
- Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region
- Autorzy:
-
Durlin, Quentin
Aliane, Abdelkader
André, Luc
Kaya, Hacile
Cocq le, Mélanie
Goudon, Valérie
Vialle, Claire
Veillerot, Marc
Hartmann, Jean-Michel - Powiązania:
- https://bibliotekanauki.pl/articles/2204221.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
germanium (Ge)
photodiode
shortwave infrared detector - Opis:
- Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 10⁷ cmˉ² are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at -0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 μm diameter photodiodes is in the 5-20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 μm, respectively, is demonstrated with a 1.8 μm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 μm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
- Źródło:
-
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144550
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł