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Wyszukujesz frazę "higher operating temperature" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
MCT heterostructures for higher operating temperature infrared detectors designed in Poland
Autorzy:
Madejczyk, Paweł
Gawron, Waldemar
Sobieski, Jan
Martyniuk, Piotr
Rutkowski, Jarosław
Powiązania:
https://bibliotekanauki.pl/articles/2204223.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
MCT
HgCdTe
metal organic chemical vapour deposition
infrared detectors
higher operating temperature
Opis:
This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response - Operating Under Zero Bias Conditions
Autorzy:
Martyniuk, P.
Kopytko, M.
Madejczyk, P.
Henig, A.
Grodecki, K.
Gawron, W.
Rutkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/221111.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
response time
unbiased condition
HgCdTe
LWIR
higher operating temperature
Opis:
The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd = 0.19) HgCdTe detector for 300 K was calculated at a level of τs ~ 1 ns for zero bias condition, while the detectivity - at a level of D* ~ 109 cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+ barrier layer play a critical role in order to reach τs ≤ 1 ns. An extra series resistance related to the processing (RS+ in a range 5-10 Ω) increased the response time more than two times (τs ~ 2.3 ns).
Źródło:
Metrology and Measurement Systems; 2017, 24, 4; 729-738
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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