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    Wyświetlanie 1-7 z 7
    Tytuł:
    Low frequency noise in Si and Si/SiGe/Si PMOSFETs
    Autorzy:
    Thomas, S. M.
    Prest, M. J.
    Fulgoni, D. J. F.
    Bacon, A. R.
    Grasby, T. J.
    Leadley, D. R.
    Parker, E. H. C.
    Whall, T. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/308779.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    electronic noise
    silicon-germanium heterostructures
    MOSFET
    dynamic threshold mode
    Opis:
    Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 64-68
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures
    Autorzy:
    Macherzynski, W
    Indykiewicz, K
    Paszkiewicz, B
    Powiązania:
    https://bibliotekanauki.pl/articles/174572.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    ohmic contact
    AlGaN/GaN heterostructures
    surface morphology
    Opis:
    Ohmic contacts to AlGaN/GaN heterostructures, which have low contact resistance and a good surface morphology, are required for the development of high temperature, high power and high frequency electronic devices. The paper presents the investigation of a Ti/Al based Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructures. Multilayer metallization of Ti/Al/Ni/Au was evaporated by an electron gun (titanium and nickel layers) and a resistance heater (aluminum and gold layers). The contacts were annealed by rapid thermal annealing (RTA) system in a nitrogen ambient atmosphere over the temperature range from 715 to 865 °C. The time of the annealing process was 60 seconds. The chemical analysis, formation and deterioration mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures were studied as a function of the annealing process conditions by a scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS).
    Źródło:
    Optica Applicata; 2013, 43, 1; 67-72
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porowate heterostruktury ilaste (PCH) na osnowie montmorillonitu jako selektywne katalizatory
    Autorzy:
    Strycharczyk, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/344081.pdf
    Data publikacji:
    2007
    Wydawca:
    nakł. Maciej Pawlikowski
    Tematy:
    porowate heterostruktury ilaste
    katalizatory
    porous clay heterostructures
    catalyst
    Źródło:
    Auxiliary Sciences in Archaeology, Preservation of Relics and Environmental Engineering; 2007, T. 4 spec. ed. [2]; 1-3
    1689-6742
    Pojawia się w:
    Auxiliary Sciences in Archaeology, Preservation of Relics and Environmental Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature
    Autorzy:
    Veleschuk, V
    Vlasenko, A
    Kisselyuk, M
    Vlasenko, Z
    Khmil, D
    Borshch, V
    Powiązania:
    https://bibliotekanauki.pl/articles/174776.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    electroluminescence at reverse bias
    InGaN/GaN heterostructures
    defect
    Opis:
    The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.
    Źródło:
    Optica Applicata; 2015, 45, 4; 535-543
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Evolution and recent advances in RF/microwave transistors
    Autorzy:
    Liou, J.J.
    Schwierz, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/308200.pdf
    Data publikacji:
    2004
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    microwave devices
    RF devices
    heterostructures
    HEMT
    HBT
    frequency limits
    RF CMOS
    Opis:
    Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
    Źródło:
    Journal of Telecommunications and Information Technology; 2004, 1; 99-105
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Elastic Coupling between BaTiO₃ Ferroelectric Film and a Substrate with Finite Thickness on Piezoelectric Coefficients
    Autorzy:
    Zhang, Wei
    Zhang, Hua
    Ouyang, Jun
    Hu, Fangren
    Powiązania:
    https://bibliotekanauki.pl/articles/1030227.pdf
    Data publikacji:
    2017-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    barium titanate
    ferroelectric heterostructures
    constrained films
    longitudinal piezoelectric coefficients
    elastic deformation
    Opis:
    The effective piezoelectric coefficients of BaTiO₃ ferroelectric films epitaxially grown on different single crystal substrates with finite thickness have been theoretically analyzed. The effective longitudinal converse piezoelectric coefficients d₃₃ of film and "film-substrate" heterostructure all monotonously increased with increase of the film thickness fraction k, and the latter is always larger than the former at the range of 0 < k < 1. Meanwhile, we also found that the effective piezoelectric coefficients d₃₃ were affected by the substrates due to different elastic constants. These results show that the elastic deformation and clamping effect of substrate have significant impacts on the piezoelectric behavior of bilayer heterostructure.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 6; 1426-1430
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system
    Autorzy:
    Ciura, Ł.
    Kolek, A.
    Gawron, W.
    Kowalewski, A.
    Stanaszek, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/221094.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    1/f noise
    infrared detectors
    nBn structure
    HgCdTe heterostructures
    noise measurements
    transimpedance detection system
    type II InAs/GaSb superlattice
    Opis:
    The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 461-472
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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