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Wyszukujesz frazę "hafnium oxide" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Hafnium Oxide as Efficient Material for a New Generation Dielectric
Autorzy:
Mukhachov, A.
Kharitonova, O.
Terentieva, O.
Powiązania:
https://bibliotekanauki.pl/articles/1029657.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
Hafnium oxide
extraction
phase
dielectric
centrifugal extractors
extractant
Opis:
In the early 2000-ies, world leaders in the field of computer engineering, such companies as IBM, Intel and Samsung Electronics announced the development of a new technology for the production of boards based on multilayer films HfO₂-Al₂O₃ on a silicon pad using the method of atomic layer deposition. The board has a high dielectric constant value thus making it possible to produce smaller transistors with increased operational speed, to reduce leakage current and electric energy consumption. It has been known that hafnium oxide is used in the production of optical devices, resistors, electronic ceramics, neutron absorption compositions, and catalysts. High purity of material is one of key conditions for its application. As source material, hafnium concentrate was used that was enriched to 10% in the form of K₂(ZrHf)F₆ salt - the product of fractional crystallization of zirconium and hafnium fluorides in the production of zirconium for nuclear applications. Another source material is a HFO₂ commercial-grade hafnium oxide produced at Vilnogorsk Mining and Smelting Works. Key process stages are fusion with alkali at a temperature of 800°C, dissolution in nitric acid and extraction. The impurities content of resultant hafnium re-extract is 10-5% (mass). The prime objective of the process technology is the preservation of hafnium purity in its oxide production, which is attained by the application of materials and equipment items having a high corrosion resistance, such as stainless steel, crucibles made of high-purity silicon, reaction vessels made of zirconium and fluoroplastic. Centrifugal extractors allow the key critical process of hafnium extraction purification to be sufficiently effective, resulting in obtaining the product of a required 99.99% purity. Physical properties of hafnium oxide are presented in sufficient detail in. Hafnium oxide can by produced using various methods to be selected based on the requirements to product quality, process efficiency and cost considerations.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 778-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Challenges for 10 nm MOSFET process integration
Autorzy:
Östling, M.
Malm, B. G.
Haartman, M.
Hallstedt, J.
Zhang, Z.
Hellström, P. E.
Zhang, S.
Powiązania:
https://bibliotekanauki.pl/articles/309004.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
sstrained silicon
silicon-germanium
silicon-on-insulator (SOI)
high-k dielectrics
hafnium oxide
nanowire
low frequency noise
mobility
metal gate
Opis:
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 2; 25-32
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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