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Wyświetlanie 1-15 z 37
Tytuł:
Active Damping in Series Connected Power Modules with Continuous Output Voltage
Autorzy:
Ulmer, Sabrina
Schullerus, Gernot
Sönmez, Ertugrul
Powiązania:
https://bibliotekanauki.pl/articles/1955969.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
power electronics
modularity
scalability
GaN
gallium nitride
active filter damping
Opis:
This paper presents a modular and scalable power electronics concept for motor control with continuous output voltage. In contrast to multilevel concepts, modules with continuous output voltage are connected in series. The continuous output voltage of each module is obtained by using gallium nitride (GaN) high electron motility transistor (HEMT)s as switches inside the modules with a switching frequency in the range between 500 kHz and 1 MHz. Due to this high switching frequency a LC filter is integrated into the module resulting in a continuous output voltage. A main topic of the paper is the active damping of this LC output filter for each module and the analysis of the series connection of the damping behaviour. The results are illustrated with simulations and measurements.
Źródło:
Power Electronics and Drives; 2021, 6, 41; 314-335
2451-0262
2543-4292
Pojawia się w:
Power Electronics and Drives
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of GaN transistors to increase efficiency of switched-mode power supplies
Zastosowanie tranzystorów GaN do zwiększenia sprawności przetwornic impulsowych
Autorzy:
Aksamit, W.
Rzeszutko, J.
Powiązania:
https://bibliotekanauki.pl/articles/267239.pdf
Data publikacji:
2016
Wydawca:
Politechnika Gdańska. Wydział Elektrotechniki i Automatyki
Tematy:
gallium nitride
GaN transistors
power conversion
efficiency
azotek galu
tranzystory GaN
straty mocy w tranzystorach GaN
Opis:
During the last few years Gallium Nitride became a rapidly growing technology in the power conversion market. GaN HEMT transistors are now offered by several manufacturers and it is expected that in the nearest future they will replace conventional Si transistors in many applications. The aim of this article is to present the actual benefits of GaN transistors over Si by comparing both technologies from the point of view of power losses. It is shown that thanks to lower internal capacitances and lower reverse recovery charge GaN transistors offer significant improvements in power conversion efficiency, especially at higher frequencies. Calculations of power losses are performed on the example of a buck converter. Different types of GaN transistors with different voltage ratings are analyzed.
W ciągu ostatnich lat na rynku elektroniki mocy nastąpił dynamiczny rozwój technologii GaN. Tranzystory GaN HEMT są obecnie oferowane przez kilku producentów i przewiduje się że w najbliższym czasie w wielu zastosowaniach zastąpią one tradycyjne tranzystory Si. Celem tej publikacji jest przestawienie rzeczywistych zalet tranzystorów GaN w odniesieniu do Si poprzez porównanie obu technologii pod kątem strat mocy. W artykule pokazano że dzięki niższym pojemnościom wewnętrznym i niższemu ładunkowi QRR tranzystory GaN pozwalają na znaczącą poprawę sprawności, szczególnie przy wyższych częstotliwościach przełączania. Obliczenia strat mocy zostały przeprowadzone na przykładzie przetwornicy typu buck. Przeanalizowane zostały różne typy tranzystorów GaN o różnych napięciach znamionowych.
Źródło:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej; 2016, 49; 11-16
1425-5766
2353-1290
Pojawia się w:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells
Autorzy:
Węgierek, Paweł
Pietraszek, Justyna
Powiązania:
https://bibliotekanauki.pl/articles/141449.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
energy levels
gallium arsenide
intermediate band solar cells
ion implantation
thermal admittance spectroscopy
Opis:
: The aim of this article is to present the results of research aimed at confirmation whether it is possible to form an intermediate band in GaAs implantation with H+ ions. The obtained results were discussed with particular emphasis on possible applications in the photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of the next generation of semiconductors solar cells. In progress of the research, a series of GaAs samples were subjected to poly-energy implantation of H+ ions, followed by high-temperature annealing. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency in order to localize deep energy levels, introduced by ion implantation. Activation energy ∆E was determined for additional energy levels resulting from the implantation of H+ ions. The method of determining the activation energy value is shown in Fig. 2 and the values read from it are σ0 = 10−9 (Ω·cm)−1 for 1000/T0 = 3.75 K−1 and σ1 = 1.34 × 10−4 (Ω·cm)−1 for 1000/T1 = 2.0 K−1 . As a result, we obtain ∆E ≈ 0.58 eV. It was possible to identify a single deep level in the sample of GaAs implanted with H+ ions. Subsequently, its location in the band gap was determined by estimating the value of ∆E. However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in [13]. Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.
Źródło:
Archives of Electrical Engineering; 2019, 68, 4; 925-931
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badania ewaluacyjne tranzystora 650 V E-HEMT GaN do zastosowań w wysokosprawnych przekształtnikach DC/DC
Evaluation of a 650 V E-HEMT GaN transistor for high-efficiency DC/DC converters
Autorzy:
Czyż, P.
Cichowski, A.
Śleszyński, W.
Powiązania:
https://bibliotekanauki.pl/articles/269112.pdf
Data publikacji:
2015
Wydawca:
Politechnika Gdańska. Wydział Elektrotechniki i Automatyki
Tematy:
azotek galu
GaN
E-HEMT
przekształtnik obniżający
napięcie
straty mocy
gallium nitride
enhancement mode
high electron mobility transistor E-HEMT
DC/DC converters
power losses
Opis:
Tematem artykułu są badania wysokonapięciowego tranzystora z azotku galu typu E-HEMT w aplikacji przekształtnika obniżającego napięcie typu buck. W pracy przedstawiono krótką charakterystykę i zalety półprzewodników szerokoprzerwowych, a także opis tranzystora GS66508P-E03 w obudowie do montażu powierzchniowego (SMD). Następnie poruszono problem chłodzenia łącznika mocy SMD i przeprowadzono badanie porównawcze dwóch układów chłodzenia. Wykazano, że zaproponowany układ jest ponad dwa razy bardziej wydajny niż zalecany przez producenta. W głównej części opracowania zaprezentowano wyniki pomiarów sprawności przekształtnika. Osiągnięto sprawność > 92 % dla układu twardo przełączającego o częstotliwości pracy 200 kHz. Tym samym potwierdzono możliwość budowania wysokosprawnych przekształtników z tranzystorami GaN.
In this paper a brief description of wide-bandgap semiconductors is given. Particularly, advantages of a 650 V GaN EHEMT transistor GS66508P-E03 are shown. This power switch is experimentally evaluated in a synchronous buck with two transistors in a half bridge configuration. The experimental results show that GaN transistors have very low total losses even when operating at high frequencies. The efficiency over 92% is achieved at the frequency of 200 kHz with 5 A output current and output power at a rate of 310 W. Additionally, in this work two different cooling systems for surface mounted transistor are compared. In a prototype for thermal evaluation one transistor has the cooling system with thermal vias through the PCB and alternatively the second one has the cooling system with the copper stud. The proposed cooling system with the copper stud is proven to have the twice smaller thermal resistance than the system with thermal vias. Another advantage is that in the same conditions the transistor is cooler and has lower on-resistance, what decreases the power losses.
Źródło:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej; 2015, 47; 31-34
1425-5766
2353-1290
Pojawia się w:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Behavior of gallium and germanium associated with zinc sulfide concentrate in oxygen pressure leaching
Autorzy:
Liu, F.
Liu, Z.
Li, Y.
Wilson, B. P.
Lundstrom, M.
Powiązania:
https://bibliotekanauki.pl/articles/110812.pdf
Data publikacji:
2017
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
zinc sulfide concentrate
gallium
germanium
pyrite
oxygen pressure leaching
Opis:
The Fankou zinc concentrate (Guangdong province, China) was mineralogically characterized and results showed that the main germanium-bearing minerals in the sample comprised of zinc sulfide and galena, whereas gallium-bearing minerals were pyrite, sphalerite and silicate. Oxygen pressure leaching of zinc sulfide concentrate was carried out in order to investigate the effect of pressure, leaching time, sulfuric acid and copper concentrations on the leaching behavior of gallium and germanium. Under optimum conditions, leaching of Zn, Fe, Ge and Ga reached 98.21, 90.45, 97.45 and 96.65%, respectively. In the leach residues, it was determined that some new precipitates, such as PbSO4, CaSO4 and SiO2, were formed, which co-precipitated a certain amount of Ga and Ge from the leach solution. The results clearly indicated that Ga and Ge were much more difficult to leach than Zn, and provided answers to why the leaching efficiency of Ga is 10% lower when compared to Ge.
Źródło:
Physicochemical Problems of Mineral Processing; 2017, 53, 2; 1047-1060
1643-1049
2084-4735
Pojawia się w:
Physicochemical Problems of Mineral Processing
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Beneficiation of Ga from alunite concentrates by selective acid leaching and alkaline precipitation
Autorzy:
Zhu, Mao-Lan
Chen, Hang
Zhong, Shui-Ping
Huang, Zhong-Sheng
Chen, Xi
Hu, Zhi-Biao
Powiązania:
https://bibliotekanauki.pl/articles/110733.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
gallium
selective leaching
precipitation
alunite concentrate
Opis:
In this study beneficiation of Ga from alunite ore was investigated. The effects of the calcination temperature, H2SO4 concentration, leaching temperature and liquid-solid ratio on the dissolution characteristic of Ga, K and Al were studied. The results showed that increasing the calcination temperature, H2SO4 concentration and leaching temperature can improve the solubility of K and Al. However, higher H2SO4 concentration and lower leaching temperature can improve the dissolution of Ga, which was beneficial to recovery of Ga. On the basis of the solubility difference in H2SO4, a two-stage process of selective acid leaching and alkali precipitation of Ga was proposed. The concentration of Ga was increased significantly from 54 g/t in alunite ore to 4100 g/t in alkali precipitation product. The major elements of Al and K in alunite were recovered as the alum crystal with a purity of 99.62%.
Źródło:
Physicochemical Problems of Mineral Processing; 2019, 55, 4; 1028-1038
1643-1049
2084-4735
Pojawia się w:
Physicochemical Problems of Mineral Processing
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Biosorption Performance of Biodegradable Polymer Powders for the Removal of Gallium(III) ions from Aqueous Solution
Autorzy:
Lee, Ching-Hwa
Lin, Hang-Yi
Cadogan, Elon I.
Popuri, Srinivasa R.
Chang, Chia-Yuan
Powiązania:
https://bibliotekanauki.pl/articles/778539.pdf
Data publikacji:
2015
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
chitosan
crab shell powder
gallium
Langmuir-Freundlich
kinetics
Opis:
Gallium (Ga) is considered an important element in the semiconducting industry and as the lifespan of electronic products decrease annually Ga-containing effluent has been increasing. The present study investigated the use of biodegradable polymer powders, crab shell and chitosan, in the removal of Ga(III) ions from aqueous solution. Ga(III) biosorption was modeled to Lagergren-first, pseudo-second order and the Weber-Morris models. Equilibrium data was modeled to the Langmuir, Freundlich and Langmuir-Freundlich adsorption isotherms to determine the probable biosorption behavior of Ga(III) with the biosorbents. The biosorbents were investigated by Fourier Transform Infrared Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy/Energy Dispersive Spectra analysis.
Źródło:
Polish Journal of Chemical Technology; 2015, 17, 3; 124-132
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calorimetric Measurements of Ga-Li System by Direct Reaction Method
Autorzy:
Dębski, A.
Powiązania:
https://bibliotekanauki.pl/articles/350810.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
gallium-lithium system
Ga-Li
calorimetry
thermochemistry
Opis:
The direct reaction calorimetric method was used for the determination of the formation enthalpy of alloys which concentrations correspond to the: Ga7Li2, Ga9Li5, GaLi, Ga4Li5, Ga2Li3, and GaLi2 intermetallic phases. The obtained experimental values of the formation enthalpy were: –18.1 ±0.8 kJ/mol at., –26.5 ±0.3 kJ/mol at., –34.7 ±0.3 kJ/mol at., –33.5 ±0.5 kJ/mol at., –32.8 ±0.3 kJ/mol at. and –24.6 ±1.4 kJ/mol at., respectively. After the calorimetric measurements, all the samples were checked by way of X-ray diffraction investigations to confirm the structure of the measured alloys. All the measured values of the formation enthalpy of the Ga-Li alloys were compared with literature data and the data calculated with use of the Miedema model.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2A; 919-926
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems
Autorzy:
Piwowarski, Karol
Powiązania:
https://bibliotekanauki.pl/articles/1818252.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
electronic devices
electric switch
photoconductive semiconductor switches
gallium phosphide
Opis:
Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 74--81
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems
Autorzy:
Piwowarski, K.
Powiązania:
https://bibliotekanauki.pl/articles/1818254.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
electronic devices
electric switch
photoconductive semiconductor switches
gallium phosphide
Opis:
Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 74--81
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides
Autorzy:
Sarwar, Mahwish
Ratajczak, Renata
Ivanov, Vitalii
Mishra, Sushma
Turek, Marcin
Wierzbicka, Aleksandra
Woźniak, Wojciech
Guziewicz, Elżbieta
Powiązania:
https://bibliotekanauki.pl/articles/2204945.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
wide bandgap oxides
zinc oxide
gallium oxide
rare earth
ion implantation
Rutherford backscattering spectrometry
low temperature photoluminescence
Opis:
Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.
Źródło:
Advances in Science and Technology. Research Journal; 2022, 16, 5; 147--154
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cyclotron production of 68Ga via proton-induced reaction on 68Zn target
Autorzy:
Sadeghi, M.
Kakavand, T.
Rajabifar, S.
Mokhtari, L.
Rahimi-Nezhad, A.
Powiązania:
https://bibliotekanauki.pl/articles/146448.pdf
Data publikacji:
2009
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
production
gallium-68
zinc-68
PET
cyclotron
Opis:
68Ga is an important positron-emitting radionuclide for positron emission tomography. In this work 68Ga was produced via the 68Zn(p,n)68Ga nuclear reaction. 68Zn electrodeposition on a copper substrate was carried out by alkaline cyanide baths. 68Zn target was irradiated with a 15 MeV proton beam and a 150 mi A current. The production yield achieved was 136 mCi/ mi Aźh (5.032 GBq/mi Aźh). 68Ga was separated from zinc and copper by a combination of cation exchange chromatography and liquid-liquid extraction methods.
Źródło:
Nukleonika; 2009, 54, 1; 25-28
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions
Autorzy:
Didyk, A. Y.
Komarov, F. F.
Vlasukova, L. A.
Gracheva, E. A.
Hofman, A.
Yuvchenko, V. N.
Wiśniewski, R.
Wilczyńska, T.
Powiązania:
https://bibliotekanauki.pl/articles/146738.pdf
Data publikacji:
2008
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
semiconductors
gallium arsenide
swift heavy ions
inelastic energy loss
atomic force microscopy (AFM)
Opis:
We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.
Źródło:
Nukleonika; 2008, 53, 2; 77-82
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Development of [66Ga]oxine complex; a possible PET tracer
Autorzy:
Jalilian, A.
Rowshanfarzad, P.
Sabet, M.
Rahiminejad-Kisomi, A.
Rajamand, A.
Powiązania:
https://bibliotekanauki.pl/articles/146276.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
gallium-66
oxine
positron emission tomography
blood cell labeling
stability
Opis:
The aim of this work is development of a possible blood cell labeling agent for ultimate use in PET. Gallium-66 (T1/2 = 9.49 h) is an interesting radionuclide that has a potential for positron emission tomography (PET) imaging of biological processes with intermediate to slow target tissue uptake. Oxine has been labeled with this radionuclide in the form of [66Ga]gallium chloride for its possible diagnostic properties. In this study, 66Ga was produced at a 30 MeV cyclotron (IBA-Cyclone 30) via the 66Zn(p,n)66Ga reaction. The production yield was 445.5 MBq/mAh. The [66Ga]oxine complex was obtained at pH = 5 in phosphate buffer medium at 37°C in 10 min. Radio-TLC showed a radiochemical purity of more than 98 š 2%. The chemical stability of the complex was checked in vitro with a specific activity of 1113 GBq/mmol. The serum stability and log P of the complex were calculated. The produced [66Ga]oxine can be used for diagnostic studies, due to its desirable physico-chemical properties both in vitro and in vivo according to internationally accepted limits.
Źródło:
Nukleonika; 2006, 51, 3; 155-159
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First vertical-cavity surface-emitting laser made entirely in Poland
Autorzy:
Gębski, Marcin
Śpiewak, Patrycja
Kołkowski, Walery
Pasternak, Iwona
Głowadzka, Weronika
Nakwaski, Włodzimierz
Sarzała, Robert P.
Wasiak, Michał
Czyszanowski, Tomasz
Strupiński, Włodzimierz
Powiązania:
https://bibliotekanauki.pl/articles/2173617.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor laser
GaAs
gallium arsenide
optical communication
VCSEL
laser półprzewodnikowy
arsenek galu
komunikacja optyczna
Opis:
The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (<2 km) optical data communication across multiple-mode optical fiber. Our devices present state-of-the-art electrical and optical parameters, e.g. high room-temperature maximum optical powers of over 5 mW, laser emission at heat-sink temperatures up to at least 95°C, low threshold current densities (<10 kA/cm2) and wall-plug efficiencies exceeding 30% VCSELs can also be easily adjusted to reach emission wavelengths of around 780 to 1090 nm.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137272
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
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