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Wyszukujesz frazę "free electron lasers" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Development of Free Electron Lasers in Europe Local and Global Implications : 2016
Autorzy:
Romaniuk, R. S.
Powiązania:
https://bibliotekanauki.pl/articles/227040.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
laser technology
laser development
lasers
free electron lasers
photonics
EUV radiation
RTG radiation
research infrastructures
Opis:
Free electron laser FELs are built in Europe mainly as nondependent infrastructures, or as a development of synchrotron ones. They are constructed mainly in centres which have considerable experience with synchrotron light sources of the third generation like DESY, Trieste, INFN, etc. Advances in very energetically efficient superconducting linear accelerators for electron beams, like TESLA type, caused an abrupt development of FEL machines all over Europe. New generation of FELs emits light beam of extreme intensity, good parameters, in IR, VIS, UV, EUV and X-ray spectral regions. The machine construction teams comprise also of young active researchers from Poland. In particular, these is a considerable participation of M.Sc. and Ph.D. students from Warsaw University of Technology at building of FLASH I, FLASH II, and EXFEL machines. Unique experiences gathered at work with these large experiments result in development of these young teams, and their further engagement in new initiatives: laser, laser - accelerator, inertial, plasma, plasma - energy, etc. This is what we observe with satisfaction. However, due to the lack of large research infrastructures in Poland, we are not members of the infrastructure owner clubs. Our young researchers may take part in the initiatives only indirectly as members of cooperative teams from the leading countries. As a further consequence, there is also a confined access of Polish laser and accelerator researchers to some kinds of European infrastructure development projects now under realization within the H2020.
Źródło:
International Journal of Electronics and Telecommunications; 2016, 62, 2; 203-211
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LCLS - Large Laser Infrastructure Development and Local Implications
Autorzy:
Romaniuk, R. S.
Powiązania:
https://bibliotekanauki.pl/articles/227327.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
USA laser programs
X-ray lasers
free electron lasers
FEL
electron linac
accelerators
electron beams
high energy photon beams
DESY laboratory
large research mega projects
LCLS
LCLS II
Opis:
The most powerful now in the world, American X-ray laser LCLS (Linac Coherent Light Source), has been working as a research and user facility since 2009. It is further developed to LCLS II machine at the Stanford National Accelerator Laboratory SLAC in Menlo Park CA. In a certain sense, LCLS II is a response to the EXFEL machine and a logical extension of LCLS. All these machines are light sources of the fifth generation. EXFEL is expected to open user facility in 2016, at a cost of over 1 mld Euro. LCLS II, which design started in 2010, will be operational in 2017. The lasers LCLS, LCLS II and EXFEL use SASE and SEED methods to generate light and are powered by electron linacs, LCLS by a warm one, and EXFEL by a cold one. The linacs have energies approaching 20 GeV, and are around 2 - 3 km in length. EXFEL linac uses SRF TESLA microwave cavity technology at 1,3 GHz. A prototype of EXFEL was FLASH laser. SLAC Laboratory uses effectively over 50 years experience in research, building and exploitation of linear electron accelerators. In 2009, a part of the largest 3 km SLAC linac was used to build the LCLS machine. For the LCLS II machine a new infrastructure is build for two new laser beams and a number of experimental stations. A number of experts and young researchers from Poland participate in the design, construction and research of the biggest world linear and elliptical accelerators and FEL lasers like LCLS (Stanford), EXFEL (DESY) and CEBAF (JLab), and a few more. The paper concentrates on the development state-of-the-art of large laser infrastructure and its global and local impact, in the competitive world of R&D. LCLS infrastructure implications in Poland are considered.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 2; 187-192
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High power amplifiers chain nonlinearity influence on the acelerating beam stability in free electron laser (FLASH)
Autorzy:
Cichalewski, W.
Jałmużna, W.
Powiązania:
https://bibliotekanauki.pl/articles/397957.pdf
Data publikacji:
2010
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
wzmacniacz wysokiej mocy
klistron
AMAM
AMPM
linearyzacja
lasery na swobodnych elektronach
high power amplifiers
linearization
digital predistortion
free electron lasers
Opis:
The high power amplifiers transfer characteristics nonlinearities can have a negative influence on the overall system performance. This is also true for the TESLA superconducting cavities accelerating field parameters control systems. This Low Level Radio Frequency control systems uses microwave high power amplifiers (like 10 MW klystrons) as actuators in the mentioned feedback loops. The amplitude compression and phase deviations phenomena introduced to the control signals can reduce the feedback performance and cause electron beam energy instabilities. The transfer characteristics deviations in the Free Electron Laser in Hamburg experiment have been investigated. The outcome of this study together with the description of the developed linearization method based on the digital predistortion approach have been described in this paper. Additionally, the results from the linearization tool performance tests in the FLASH's RF systems have been placed.
Źródło:
International Journal of Microelectronics and Computer Science; 2010, 1, 1; 77-80
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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