- Tytuł:
- Reduced stress and fluctuation for the integrated α-Si TFT gate driver on the LCD
- Autorzy:
-
Huang, N. X.
Shiau, M. S.
Wu, H.-C.
Sun, R. C.
Liu, D.-G. - Powiązania:
- https://bibliotekanauki.pl/articles/397883.pdf
- Data publikacji:
- 2010
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
sterownik bramy
fluktuacja hałasu
wpływ naprężenia
system w panelu
gate driver
fluctuation noise
stress effect
system on panel (SoP) - Opis:
- In this paper, an integrated TFT gate driver was designed on the glass substrate not only to decrease the fluctuation at the output, but also to reduce the stress effect on the pull-down branches. The fluctuation in the voltage at the output transistor was attributed to the coupled clocks through the parasitic capacitors in the TFTs. In this study, the voltage gating the pull-down braches was reduced for longer operational lifetime. This scheme was investigated by simulation by Smart-SPICE with an α-Si TFT model from Wintek Inc. at level 35.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2010, 1, 3; 311-315
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł