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    Wyświetlanie 1-6 z 6
    Tytuł:
    Verilog-A Compact Semiconductor Device Modelling and Circuit Macromodelling with the QucsStudio-ADMS "Turn-Key" Modelling System
    Autorzy:
    Brinson, M. E.
    Margraf, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/398029.pdf
    Data publikacji:
    2012
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    QucsStudio
    ADMS
    Verilog-A
    modelowanie turn-key
    compact device modelling
    turn-key component modeling
    Opis:
    The Verilog-A "Analogue Device Model Synthesizer" (ADMS) has in recent years become an established modelling tool for GNU General Public License circuit simulator development. Qucs and ngspice are two examples of open source circuit simulators that employ ADMS for compact semiconductor model construction. This paper presents a "turn- key" compact device modelling and circuit macromodelling system based on ADMS and implemented in the QucsStudio circuit design, simulation and manufacturing environment. A core feature of the new system is a modelling procedure which does not require users to manually patch, by hand, circuit simulator C++ code. At the start of QucsStudio simulation the software automatically detects any changes in Verilog-A model code, re-compiling and dynamically linking the modified code to the body of the QucsStudio cod e. The inherent flexibility of the "turn-key" system encourage s rapid experimentation with analogue and RF compact device models and circuit macromodels. In this paper QucsStudio "turn-key" modelling is illustrated by the design of a single stage RF amplifier circuit and the Harmonic Balance large signal AC simulation of a 50 Ω RF diode switch.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2012, 3, 1; 32-40
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A
    Autorzy:
    Angelov, G. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/397997.pdf
    Data publikacji:
    2012
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    modelowanie elementów elektronicznych
    model kompaktowy
    PSP
    symulacja obwodu
    dielektryk bramkowy o wysokiej przenikalności elektrycznej
    Verilog-A
    Spectre
    device modeling
    compact models
    circuit simulation
    high-k gate dielectric
    Opis:
    A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2012, 3, 3; 111-118
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Realization of logic integrated circuits in VeSTIC process - design, fabrication, and characterization
    Autorzy:
    Domański, Krzysztof
    Głuszko, Grzegorz
    Sierakowski, Andrzej
    Tomaszewski, Daniel
    Szmigiel, Dariusz
    Powiązania:
    https://bibliotekanauki.pl/articles/397763.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    VeSTIC
    VeSFET
    logic cell
    logic integrated circuit
    ring oscillator
    parasitic element
    oscillation frequency
    compact modeling
    komórka logiczna
    logiczny układ scalony
    generator pierścieniowy
    częstotliwość oscylacji
    kompaktowe modelowanie
    Opis:
    A design and manufacturing of test structures for characterization of logic integrated circuits in a VeSTIC process developed in ITE, are described. Two variants of the VeSTIC processs have been described. A role and sources of the process variability have been discussed. The VeSFET I-V characteristics, the logic cell static characteristics, and waveforms of the 53-stage ring oscillator are presented. Basic parameters of the VeSFETs have been determined. The role of the process variability and of the parasitic elements introduced by the conservative circuit design, e.g. wide conductive lines connecting the devices in the circuits, have been discussed. Based on the inverter layout and on the process specification, the parasitic elements of the inverter equivalent circuit have been extracted. The inverter propagation times, the ring oscillator frequency, and their dependence on the supply bias have been determined.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2018, 9, 3; 123-132
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A
    Autorzy:
    Angelov, G. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/398142.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    modelowanie elementów elektronicznych
    model kompaktowy
    symulacja obwodu
    dielektryk bramkowy o wysokiej przenikalności elektrycznej
    Verilog-A
    Spectre
    device modeling
    compact models
    circuit simulation
    high-k gate dielectric
    Opis:
    A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2011, 2, 3; 105-112
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Area equivalent WKB Compact modeling approach for tunneling probability in Hetero-Junction TFETs including ambipolar behaviour
    Autorzy:
    Horst, Fabian
    Farokhnejad, Atieh
    Darbandy, Ghader
    Iñíguez, Benjamín
    Kloes, Alexander
    Powiązania:
    https://bibliotekanauki.pl/articles/397787.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    TFET
    tunneling probability
    WKB approximation
    heterojunction
    compact modeling
    closed-form
    double-gate
    DG
    ambipolarity
    modelowanie kompaktowe
    dwubiegunowość
    Opis:
    This paper introduces an innovative modeling approach for calculating the band-to-band (B2B) tunneling probability in tunnel-field effect transistors (TFETs). The field of application is the usage in TFET compact models. Looking at a tunneling process in TFETs, carriers try to tunnel through an energy barrier which is defined by the device band diagram. The tunneling energy barrier is approximated by an approach which assumes an area equivalent (AE) triangular shaped energy profile. The simplified energy triangle is suitable to be used in the Wentzel-Kramers-Brillouin (WKB) approximation. Referring to the area instead of the electric field at individual points is shown to be a more robust approach in terms of numerical stability. The derived AE approach is implemented in an existing compact model for double-gate (DG) TFETs. In order to verify and show the numerical stability of this approach, modeling results are compared to TCAD Sentaurus simulation data for various sets of device parameters, whereby the simulations include both ON- and AMBIPOLAR-state of the TFET. In addition to the various device dimensions, the source material is also changed to demonstrate the feasibility of simulating hetero-junctions. Comparing the modeling approach with TCAD data shows a good match. Apart the limitations demonstrated and discussed in this paper, the main advantage of the AE approach is the simplicity and a better fit to TCAD data in comparison to the quasi-2D WKB approach.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2018, 9, 2; 47-59
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advanced compact modeling of the deep submicron technologies
    Autorzy:
    Grabiński, W.
    Bucher, M.
    Sallese, J.-M.
    Krummenacher, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/309312.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra deep submicron (UDSM) technology
    compact modeling
    EKV MOS transistor model
    MOSFET
    matching
    low power
    RF applications
    Opis:
    The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 žm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model
    Źródło:
    Journal of Telecommunications and Information Technology; 2000, 3-4; 31-42
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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