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Wyszukujesz frazę "chemical etching" wg kryterium: Temat


Wyświetlanie 1-8 z 8
Tytuł:
Chemical etching of Nitinol stents
Autorzy:
Katona, B.
Bognar, E.
Berta, B.
Nagy, P.
Hirschberg, K.
Powiązania:
https://bibliotekanauki.pl/articles/307073.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
stent
nitinol
chemical etching
metallic surface area
Opis:
At present the main cause of death originates from cardiovascular diseases. Primarily the most frequent cause is vessel closing thus resulting in tissue damage. The stent can help to avoid this. It expands the narrowed vessel section and allows free blood flow. The good surface quality of stents is important. It also must have adequate mechanical characteristics or else it can be damaged which can easily lead to the fracture of the implant. Thus, we have to consider the importance of the surface treatment of these implants. In our experiments the appropriate design was cut from a 1.041 mm inner diameter and 0.100 mm wall thickness nitinol tube by using Nd:YAG laser device. Then, the stent was subjected to chemical etching. By doing so, the burr created during the laser cutting process can be removed and the surface quality refined. In our research, we changed the time of chemical etching and monitored the effects of this parameter. The differently etched stents were subjected to microscopic analysis, mass measurement and in vivo environment tests. The etching times that gave suitable surface and mechanical features were identified.
Źródło:
Acta of Bioengineering and Biomechanics; 2013, 15, 4; 3-8
1509-409X
2450-6303
Pojawia się w:
Acta of Bioengineering and Biomechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gate dielectrics: process integration issues and electrical properties
Autorzy:
Schwalke, U.
Powiązania:
https://bibliotekanauki.pl/articles/308978.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
high-k dielectrics
CMOS
Pr2O3
process integration
resist removal
wet chemical cleaning
wet chemical etching
RIE
Opis:
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 7-10
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of the Method of Separating Graphene from the Growth Substrate on the Quality of the 2D Material Obtained
Autorzy:
Dybowski, K.
Romaniak, G.
Kula, P.
Jeziorna, A.
Kowalczyk, P.
Atraszkiewicz, R.
Kołodziejczyk, Ł.
Nowak, D.
Zawadzki, P.
Kucińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/351974.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
graphene
polycrystalline graphene
electrochemical delamination
chemical etching
graphene transfer
Opis:
This article presents the research results on impact of the method of polycrystalline graphene layers separation from the growth substrate on the obtained carbon material quality. The studies were carried out on graphene sheets obtained by metallurgical method on a liquid metal substrate (HSMG® graphene). The graphene was separated using chemical etching method or the electrochemical delamination method, by separating by means of electrolysis. During electrolysis, hydrogen is emitted on a graphene-covered of cathode (metal growth substrate) as a result of the voltage applied. The graphene layer breaks away from metallic substrate by gas accumulation between them. The results from these separation processes were evaluated by means of different tools, such as SEM, TEM and AFM microscopy as well as Raman Spectroscopy. In summary, the majority of analyses indicate that the graphene obtained as a result of hydrogen delamination possesses higher purity, smaller size and number of defects, its surface is smooth and less developed after the transfer process to the target substrate.
Źródło:
Archives of Metallurgy and Materials; 2019, 64, 4; 1321-1326
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of powerful laser radiation on formation of pores in Si by electrochemical etching
Autorzy:
Medvid, A.
Onufrijevs, P.
Fedorenko, L.
Yusupov, M.
Dauksta, E.
Powiązania:
https://bibliotekanauki.pl/articles/385265.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
porous Si
laser
optical storage
chemical etching
Opis:
The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 166-168
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation on polycarbonate nanomembrane production based on alpha particles irradiation
Autorzy:
Ziaie, F.
Shadman, M.
Yeganegi, S.
Mollaie, A.
Majdabadi, A.
Powiązania:
https://bibliotekanauki.pl/articles/148096.pdf
Data publikacji:
2009
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
track-etched membrane
micro/nanofilter
alpha particles
chemical etching
polycarbonate
Opis:
Track-etched membranes were prepared in the Dosimetry Laboratory of Agricultural, Medical and Industrial Research School by exposing polycarbonate (PC) films with a thickness of about 20 μm to alpha particles emitted from 241Am followed by chemical etching in sodium hydroxide (NaOH) at different temperatures and solution concentrations. The PC films were prepared using the method of chemical solving, forming and drying in a vacuum oven. The etching rate of PC was related to the concentration of etching solution, etching temperature and time. Therefore, a series of track-etched membranes were produced using different etching parameters. The relation between the etching rate and the etching parameters were established from experimental data and can be used to control the average pore sizes of the PC track-etched membrane. The pore sizes and their structures were studied by an optical microscope (OM) and a scanning electron microscope (SEM) and the obtained results indicated that the pores across the PC films are cylindrically shaped.
Źródło:
Nukleonika; 2009, 54, 3; 157-161
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Justification of the most rational method for the nanostructures synthesis on the semiconductors surface
Autorzy:
Suchikova, Y.
Vambol, S.
Vambol, V.
Mozaffari, N.
Powiązania:
https://bibliotekanauki.pl/articles/368501.pdf
Data publikacji:
2019
Wydawca:
Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
Tematy:
hierarchies’ analysis method
chemical etching
electrochemical etching
lithographic etching
nanostructures synthesis
metoda hierarchii analitycznej
trawienie chemiczne
wytrawianie elektrochemiczne
litografia
synteza nanostruktur
Opis:
Purpose: of this paper is to justification the most rational method for the nanostructures synthesis on the semiconductors surface, which is capable of providing high quality synthesized nanostructures at low cost and ease of the process. Design/methodology/approach: The choice of the optimal method of synthesis was carried out using the hierarchy analysis method, which is implemented by decomposing the problem into more simple parts and further processing judgments at each hierarchical level using pair comparisons. Findings: The article describes the main methods of synthesis of nanostructures, presents their advantages and disadvantages. The methods were evaluated by such criteria as: environmental friendliness, efficiency, stages number of the technological process, complexity, resources expenditure and time and effectiveness. Using the hierarchy analysis method, has been established that electrochemical etching is the most important alternative, and when choosing a nanostructures synthesis method on the semiconductors surface, this method should be preferred. Such studies are necessary for industrial serial production of nanostructures and allow reducing expenses at the realization of the problem of synthesis of qualitative samples. Research limitations/implications: In this research, the hierarchy analysis method was used only to select a rational method for synthesizing nanostructures on the semiconductors surface. However, this research needs to be developed with respect to establishing a correlation between the synthesis conditions and the nanostructures acquired properties. Practical implications: First, was been established that the optimal method for the nanostructures synthesis on the semiconductors surface is electrochemical etching, and not lithographic or chemical method. This allowed the theoretical and empirical point of view to justify the choice of the nanostructures synthesis method in the industrial production conditions. Secondly, the presented method can be applied to the synthesis method choice of other nanostructures types, which is necessary in conditions of resources exhaustion and high raw materials cost. Originality/value: In the article, for the first time, the choice of the nanostructures synthesis method on the semiconductors surface is presented using of paired comparisons of criteria and available alternatives. The article will be useful to engineers involved in the nanostructures synthesis, researchers and scientists, as well as students studying in the field of "nanotechnology".
Źródło:
Journal of Achievements in Materials and Manufacturing Engineering; 2019, 92, 1-2; 19-28
1734-8412
Pojawia się w:
Journal of Achievements in Materials and Manufacturing Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical properties of Pittsburgh glass subjected to mechanical and chemical treating
Autorzy:
Jaglarz, J.
Powiązania:
https://bibliotekanauki.pl/articles/173426.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
chemical etching and sanding of glass surface
antireflective properties
Opis:
An optical study of satinated Pittsburgh glass wafers was conducted and special attention was paid to their applications in greenhouse industry. They included: specular reflectance spectra in the range 300–1100 nm, using a reflection probe, resolve angle scattering, diffuse reflectance by means of an integrating sphere, X–Y optical profile measurements and ellipsometric investigation by means of a spectroscopic ellipsometer. Additionally, a surface topography study of investigated samples was carried out by means of atomic force microscopy (AFM) measurements. The obtained results allowed us to describe surface topography of chemically and mechanically modified surfaces.
Źródło:
Optica Applicata; 2013, 43, 3; 453-461
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zastosowanie selektywnego trawienia chemicznego do określenia położenia ścięć bazowych na monokrystalicznych płytkach o orientacji (100) związków półprzewodnikowych typu AIIIBV
Application of selective chemical etching to producing on the orientation flats on the wafers III-V semiconducting compounds
Autorzy:
Pawłowska, J.
Bańkowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/192407.pdf
Data publikacji:
2008
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
ścięcie bazowe
trawienie chemiczne AIIIBV
flats
chemical etching AIIIBV materials
Opis:
W pracy omówiono metody identyfikacji kierunków krystalograficznych w celu wyznaczania ścięć bazowych na płytkach monokryształów grupy materiałowej AIIIBV. Przedstawiono porównawcze wyniki otrzymane z wykorzystaniem różnych metod selektywnego trawienia. Określono przydatność poszczególnych metod do wyznaczania ścięć bazowych na płytkach monokryształów bezdyslokacyjnych. Dla monokrystalicznych płytek InAs opracowano technikę określania kierunków krystalograficznych z zastosowaniem masek tlenkowych.
The methods used for determination of the crystallographic orientation in order to make flats on wafers of III-V compounds are presented. The results of selective etching obtained by using various chemical solutions are compared. For dislocation - free InAs wafers, the technique based on using oxide masks have been implemented.
Źródło:
Materiały Elektroniczne; 2008, T. 36, nr 3, 3; 63-75
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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