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Wyszukujesz frazę "capacitance-voltage" wg kryterium: Temat


Wyświetlanie 1-5 z 5
Tytuł:
Dynamic Charge Carrier Transport Behaviors in Zirconium Oxide for Nuclear Cladding Materials
Autorzy:
Park, Il-Kyu
Lee, Sang-Seok
Mok, Yong Kyoon
Jeon, Chan-Woo
Kim, Hyun-Gil
Powiązania:
https://bibliotekanauki.pl/articles/351043.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
zirconium
nuclear cladding
Zr oxide
capacitance-voltage
current-voltage
Opis:
Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360°C. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamiccharge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.
Źródło:
Archives of Metallurgy and Materials; 2020, 65, 3; 1063-1067
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
Autorzy:
Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:
https://bibliotekanauki.pl/articles/308057.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
radio frequency reactive ion etching
Opis:
This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 20-24
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
Autorzy:
Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:
https://bibliotekanauki.pl/articles/308059.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
high temperature annealing process
radio frequency reactive ion etching
Opis:
This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 25-28
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation between electric parameters of carbon layers and their capacity for field emission
Autorzy:
Gronau, R.
Powiązania:
https://bibliotekanauki.pl/articles/308655.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
carbon layers
diamond-like carbon (DLC)
field emission
RF PACVD
AFM
capacitance-voltage (C-V)
current-voltage (I-V)
Opis:
The aim of this work is to study a possibility of field electron emission from carbon layers produced by radio frequency plasma chemical vapor deposition (RF PCVD) method. A correlation between electric parameters of the layers and the ability to produce electron emission is also studied through material (AFM) and electrical (C-V, I-V) characterization of the obtained layers. It is demonstrated that the layers deposited with the highest self-bias exhibit the highest capacity for electron emission.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 37-38
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of operation of class E ZVS resonant inverter
Autorzy:
Szychta, E.
Powiązania:
https://bibliotekanauki.pl/articles/262645.pdf
Data publikacji:
2005
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
Tematy:
class E ZVS resonant
inverter
output capacitance
MOSFET transistor
zero voltage switching
Opis:
The article discusses class E zero-voltage-switching resonant inverter (ZVS). The resonant circuit of the inverter is subject to mathematical analysis using the method of state variables with the aid of MATLAB software. Results of simulation testing, based on Simplorer software, of an inverter at the operating frequency of 100kHz are presented.
Źródło:
Electrical Power Quality and Utilisation. Journal; 2005, 11, 1; 57-67
1896-4672
Pojawia się w:
Electrical Power Quality and Utilisation. Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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