- Tytuł:
- Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
- Autorzy:
-
Zaręba, A.
Łukasiak, L.
Jakubowski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/308625.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
heterojunction bipolar transistor
SiGe
base width modulation - Opis:
- A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 88-92
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł