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Tytuł:
Propozycje zmian bodźców podatkowych wspierających działalność B+R polskich przedsiębiorstw
Proposals for Changes in Tax Incentives to Support R&D in Poland’s Business Sector
Autorzy:
Adamczyk, Adam
Powiązania:
https://bibliotekanauki.pl/articles/574566.pdf
Data publikacji:
2010-12-31
Wydawca:
Szkoła Główna Handlowa w Warszawie. Kolegium Analiz Ekonomicznych
Tematy:
tax system
tax incentives
research and development (R&D)
investment
OECD B-index
Opis:
Sustainable economic growth in Poland requires a high level of innovation. At the moment, innovation in the Polish economy is low due to factors such as insufficient research and development (R&D) expenditure in the corporate sector. In 2006, tax incentives were introduced to stimulate R&D in enterprises. However, they failed to produce the expected results. The incentives enjoyed little interest among businesspeople, and in consequence failed to contribute to increased spending on R&D in the corporate sector. The paper aims to evaluate these tax incentives by using international comparisons and putting forward proposals for changes in the tax break system. The existing system was examined with the use of the B-index (“before-tax income needed to break even on one dollar of R&D spending”), a popular measure of the tax system’s influence on investment in R&D applied by the Organization for Economic Cooperation and Development (OECD). The B-index is based on the idea of a marginal effective tax rate. It measures the relative profitability of R&D expenditure in a given tax system. The analyses made by the author show that the Polish tax system has a negative impact on R&D in the corporate sector-more detrimental than suggested by the B-indexes calculated by the OECD. The results obtained lead the author to conclude that the tax regulations currently in force in Poland are among the least favorable among OECD countries in terms of their influence on R&D in the corporate sector. According to Adamczyk, the main reason behind the unfavorable influence of the Polish tax system on the profitability of R&D in the corporate sector is that the existing tax breaks apply to a limited number of taxpayers. Other causes include inadequate income tax rates and tax amortization regulations used in the country. Poland’s current tax instruments designed to support R&D, due to their highly selective nature, contradict the idea of direct fiscal incentives, Adamczyk says. He adds that the effectiveness of tax breaks may also depend on factors not covered by the B-index, such as the transparency and stability of tax regulations.
Źródło:
Gospodarka Narodowa. The Polish Journal of Economics; 2010, 244, 11-12; 41-60
2300-5238
Pojawia się w:
Gospodarka Narodowa. The Polish Journal of Economics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Sufficient optimality criteria and duality for multiobjective variational control problems with B-(p,r)-invex function
Autorzy:
Antczak, T.
Jimenez, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/255711.pdf
Data publikacji:
2014
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
multiobjective variational control problems
efficient solution
B-(p, r)-invex functions
optimality conditions
duality
Opis:
In this paper, we generalize the notion of B-(p, r)-invexity introduced by Antczak in [A class of B-(p; r)-invex functions and mathematical programming, J. Math. Anal. Appl. 286 (2003), 187–206] for scalar optimization problems to the case of a multiobjective variational programming control problem. For such nonconvex vector optimization problems, we prove sufficient optimality conditions under the assumptions that the functions constituting them are B-(p, r)-invex. Further, for the considered multiobjective variational control problem, its dual multiobjective variational control problem in the sense of Mond-Weir is given and several duality results are established under B-(p, r)-invexity.
Źródło:
Opuscula Mathematica; 2014, 34, 4; 665-682
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calculation of Population Densities of Excited CI and CII Levels in Helium and Argon Plasmas Containing Small Admixtures of $\text{CO}_{2}$ - Importance to Analysis of Radiation Emitted from Plasmas of Axial Symmetry
Autorzy:
Bacławski, A.
Musielok, J.
Powiązania:
https://bibliotekanauki.pl/articles/1963254.pdf
Data publikacji:
1997-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.30.-r
52.25.-b
52.25.Rv
Opis:
Population densities of excited CI and CII levels are calculated in helium and argon plasmas containing small admixtures of $\text{CO}_{2}$. Calculations are performed for a total pressure of 1 atmosphere, in a temperature interval from 8000 K to 40000 K, assuming local thermal equilibrium (LTE) and partial local thermal equilibrium (pLTE) conditions. Normal temperatures are obtained for selected excited CI and CII levels. The results are applied to a helium plasma with traces of $\text{CO}_{2}$, of cylindrical symmetry with presumed radial temperature distribution. Effective intensities of CI and CII spectral lines, corresponding to side-on radiance measurements along the cylinder diameter are evaluated. On hand of these effective line intensities and applying the Boltzmann plot method effective temperatures are evaluated and compared with the presumed temperature distribution.
Źródło:
Acta Physica Polonica A; 1997, 91, 3; 519-529
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Semiconductor Devices
Autorzy:
Balestra, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811906.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.20.-r
73.21.-b
73.23.-b
73.30.+y
73.40.-c
73.50.-h
73.63.-b
Opis:
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 945-974
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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