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Tytuł:
Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion
Autorzy:
Qin, C
Shen, W
Zhao, J.
Yu, H.
Xu, E
Powiązania:
https://bibliotekanauki.pl/articles/173469.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
semiconductor optical amplifiers
polarization
patterning effect
Opis:
In this paper, polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion is experimentally and theoretically investigated. The carrier and photon density rate equations are numerically solved by using the time-domain traveling wave model. The material gain calculation, including the strain effect in the active layer, is based on the k·p method. By comparing experimental and computational results, it is demonstrated that the polarization of the injection signal has a significant influence on the gain recovery time of quantum well semiconductor optical amplifier. Under the cross-polarized signals injection, the output signals suffer the weakest and strongest patterning effects both for unstrained and tensile strained quantum well semiconductor optical amplifiers.
Źródło:
Optica Applicata; 2015, 45, 2; 163-172
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nowe układy izolatorów galwanicznych sygnałów dolnopasmowych
The New Constructions of Insulation Amplifiers for Low-pass Signals
Autorzy:
Bień, A.
Boroń, A.
Szyper, M.
Wetula, A.
Żegleń, T.
Powiązania:
https://bibliotekanauki.pl/articles/151270.pdf
Data publikacji:
2009
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
izolatory galwaniczne
tłumienie zakłóceń wspólnych
insulation amplifiers
common disturbance suppression
Opis:
Artykuł przedstawia właściwości metrologiczne nowych rozwiązań układowych izolatorów galwanicznych dwu rodzajów: z barierą pojemnościową oraz światłowodową. Uzyskano układy odporne na wysokie napięcia wspólne, o szerokim paśmie przenoszenia oraz innych właściwościach, które porównano z parametrami znanych układów. Przeprowadzone wstępne badania aplikacyjne opracowanych urządzeń wskazują na możliwe zastosowania, m. in. w pomiarach elektroenergetycznych.
The article describes a construction and metrological properties of two new insulation amplifier designs. The first amplifier features a capacitive insulation barrier, while the other uses an optical barrier and power transmission. Conducted experiments include estimation of static and frequency responses and nonlinearities, as well as breakdown tests for the capacitive amplifier. Obtained parameters were compared against popular commercial insulation amplifiers' parameters. Comparison shows that presented amplifiers feature the highest breakdown voltage in class, and very high common mode rejection ratio. Besides parameters estimation, preliminary application experiments were conducted for a capacitive amplifier. These experiments consisted acquisition and spectral analysis of an IGBT converter voltage using a resistive divider and the described amplifier. Presented results of these experiments suggest possible application areas, such as electrical power measurements and power electronic converter voltage analysis.
Źródło:
Pomiary Automatyka Kontrola; 2009, R. 55, nr 12, 12; 1008-1011
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photonic generation of broadly tunable radio-frequency signal using a reflective semiconductor optical amplifier
Autorzy:
Lu, Youxi
Wang, Fei
Gu, Jun
Shi, Lun
Peng, Mengmeng
Huang, Jingxin
Kang, Wen
Powiązania:
https://bibliotekanauki.pl/articles/173479.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
radio frequency signal generation
semiconductor optical amplifiers
four-wave mixing
Opis:
A novel scheme for photonic generation of broadly tunable radio frequency signal using a reflective semiconductor optical amplifier (RSOA) is demonstrated. A continuous wave emitted from the laser diode is modulated by a Mach–Zehnder modulator, then the modulated optical carrier is injected into the RSOA. Due to the four-wave mixing effect in the RSOA, the limited frequency components of the modulated signal are expanded, which directly lead to the generation of a wide frequency comb. Two optical tunable bandpass filters are parallelly connected to select the desired sidebands, which are launched into a photodetector or photomixer to generate radio frequency signal by beating. Using the proposed method, the bandwidth of generated radio frequency signal can range from 20 to 300 GHz.
Źródło:
Optica Applicata; 2019, 49, 1; 27-36
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatial power combiner using a planar active transmitarray of stacked patches
Autorzy:
Tai, F.-C. E.
Białkowski, M. E.
Powiązania:
https://bibliotekanauki.pl/articles/307767.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
active antennas
amplifiers
microstrip antennas
planar arrays
power combiners
Opis:
An X-band spatial power combiner, which uses a planar transmitarray (TXA) of orthogonally polarized stacked microstrip patches integrated with input and output ports of transistor amplifiers is described. In order to obtain an increased operational bandwidth, the unit cell of the combiner with various stacked patch (SP) configurations is investigated. The configuration showing the smallest insertion losses is chosen for developing a TXA. The constructed spatial combiner includes a 4×4 cell TXA placed between two hard horn antennas. Its performance is assessed experimentally in terms of amplification gain and combining efficiency.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 2; 45-49
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pomiar wzmocnienia napięciowego scalonych wzmacniaczy operacyjnych CMOS w zakresie temperatur od 4,2 K do 300 K
Open loop gain measurement of CMOS Operational Amplifiers of range from 4,2 K to 300 K
Autorzy:
Pająkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/152165.pdf
Data publikacji:
2008
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
wzmacniacze operacyjne
niskie temperatury
CMOS
operational amplifiers
low temperatures
Opis:
W artykule opisane jest badanie wzmacniaczy operacyjnych CMOS w zakresie temperatur od 4,2 K do 300 K. Charakterystyczną cechą wzmacniaczy operacyjnych CMOS jest histereza wejściowego napięcia niezrównoważenia dla pracy wzmacniacza przy otwartej pętli sprzężenia zwrotnego. W artykule opisany jest sposób, który pomimo istnienia histerezy wejściowego napięcia niezrównoważenia, pozwala na wykonanie pomiarów wzmocnienia napięciowego wzmacniaczy operacyjnych CMOS.
The article describes study of the CMOS operational amplifiers within the temperatures ranging from 4,2 K to 300 K. The characteristic feature of CMOS operational amplifiers is hysteresis of input offset voltage for performance of amplifiers with open loop feedback. The method presented allows conducting measurements of voltage gain of CMOS operational amplifiers despite this hysteresis.
Źródło:
Pomiary Automatyka Kontrola; 2008, R. 54, nr 6, 6; 371-373
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC/DC power amplifier dedicated for immunity testing
Autorzy:
Gonscz, D.
Powiązania:
https://bibliotekanauki.pl/articles/114656.pdf
Data publikacji:
2016
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
laboratory power amplifiers
immunity tests against conducted disturbances
signal processing
Opis:
The paper deals with theoretical and technical aspects of construction of laboratory AC/DC amplifier. The work includes project, theoretical analysis, computer simulations and testing of prototype power amplifier. The block diagram of prototype device is shown in Fig. 3. The amplifier converts the DC component with value 12 V or 24 V and AC component (voltage disturbing signal). The amplifier consists of two sections and each section contains two component amplifier units working in the parallel structure. Developed device will be used in the laboratory stand for immunity testing of vehicle on-board electronic devices against selected conducted disturbances. The results of theoretical analysis are discussed in the chapter 3. The amplifier is characterized by good metrology parameters and has wide frequency range (Fig. 11 and Fig. 12). The test results of prototype amplifier are presented in the chapter 5.
Źródło:
Measurement Automation Monitoring; 2016, 62, 10; 348-351
2450-2855
Pojawia się w:
Measurement Automation Monitoring
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Modelling AM/AM and AM/PM Conversions via Volterra Series
Autorzy:
Borys, A.
Sieńko, W.
Powiązania:
https://bibliotekanauki.pl/articles/226724.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
AM/AM conversions
AM/PM conversions
nonlinear distortion
power amplifiers
Volterra series
Opis:
In this paper, we present the expressions, not published up to now, that describe the AM/AM and AM/PM conversions of communication power amplifiers (PAs) via the Volterra series based nonlinear transfer functions. Furthermore, we present a necessary and sufficient condition of occurrence of the nonzero values of AM/PM conversion in PAs. Moreover, it has been shown that Saleh’s approach and related ones, which foresee nonzero level of AM/PM conversion, are not models without memory. It has been also shown that using a polynomial description of a PA does not lead to a nonzero AM/PM conversion. Moreover, a necessary condition of occurrence of an AM/AM conversion in this kind of modelling is existence of at least one nonzero polynomial coefficient associated with its odd terms of degree greater than one.
Źródło:
International Journal of Electronics and Telecommunications; 2016, 62, 3; 267-272
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On In-Network and Other Types of Amplifier Descriptions for Nonlinear Distortion Analysis
Autorzy:
Borys, A.
Powiązania:
https://bibliotekanauki.pl/articles/226946.pdf
Data publikacji:
2010
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
weakly nonlinear amplifiers
nonlinear distortion analysis
harmonic distortion
constitutive relations
Volterra series
Opis:
Basics of modelling analog weakly nonlinear amplifiers at higher frequencies for the purpose of nonlinear distortion analysis are addressed in this paper. First, the constitutive relation for this class of amplifiers, with the use of a Volterra series, is formulated. It is the basis for formulation and derivation of the so-called in-network and input-output type descriptions of an amplifier in the time domain, which are then transferred into the multi-frequency domains. Usefulness of the general models achieved, which were not published up to now in the literature, lies in the fact that they can be used for any topology in which the amplifier is incorporated and for any nonlinear distortion measure assumed. Some examples of calculations are given at the end of the paper for cascade and feedback topologies, and for harmonic distortion measure.
Źródło:
International Journal of Electronics and Telecommunications; 2010, 56, 2; 177-184
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A review of the configuration and performance limitation parameters in optical amplifiers
Autorzy:
Ab-Rahman, M. S.
Powiązania:
https://bibliotekanauki.pl/articles/173365.pdf
Data publikacji:
2014
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
semiconductor optical amplifiers (SOA)
erbium-doped fibre amplifier (EDFA)
Raman
amplifier
Opis:
Optical amplifiers are realised in a wide range of applications, such as metro – dense wavelength division multiplexing and cable television networks. These applications require the amplifier to provide a maximum output power level by accepting an input power near the saturation level. To obtain an ideal amplifier according to several parameters, the erbium concentration in the composite core glass, the optimum length of the fibre, the pump saturation and the input signal signaltonoise ratio must be critically studied and addressed. In this paper, we will review the types of optical amplifiers used in communication systems today as well as the parameters that limit the performance of optical amplifiers in the network, such as the noise figure, the gain saturation, the polarisation dependence gain and inhomogeneous broadening effects. Based on the performance limitation factor, we model the amplifier gain profile and the effect of the gain value on the network performance. Finally, we propose various configurations of an optical amplifier, and the advantages of each amplification technique are highlighted.
Źródło:
Optica Applicata; 2014, 44, 2; 251-266
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
When Can a Narrowband Power Amplifier Be Considered to Be Memoryless and when Not?
Autorzy:
Borys, A.
Powiązania:
https://bibliotekanauki.pl/articles/226790.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
narrowband power amplifiers (PAs)
modelling memory in PAs
conditions for PA to be memoryless
Opis:
This paper tries to get a response to the following question: When can a narrowband power amplifier (PA) be considered to be memoryless and when can it not be considered memoryless? To this end, a thorough and consistent analysis of the notions and definitions related with the above topic is carried out. In the considerations presented, two models of the narrowband PA are exploited interchangeably: the black box model widely used in the literature and a model developed here, which is based on the Volterra series. These two models complement each other. In this paper, the conditions for a linear or nonlinear narrowband PA to be memoryless or approximately memoryless or possessing memory are derived and illustrated. They are formulated in terms of the signal delay as well as in terms of the amplitude-to-phase (AM/PM) conversion of the amplifier. Furthermore, the two possible interpretations of the amplitude-to-amplitude (AM/AM) and AM/PM conversions are given a mathematical framework. That is these conversions are presented through some operations. One set of these operations allows to treat the AM/AM and AM/PM conversions as distortions of the modulating signals. Or equivalently as distortions of a given signal constellation when it passes through the PA. Finally, it is proved that the Saleh’s and Ghorbani’s models of the AM/AM and AM/PM conversions occurring in the PAs, which were published in the literature, are not memoryless ones.
Źródło:
International Journal of Electronics and Telecommunications; 2018, 64, 2; 229-242
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Picosecond mode-locked tm-doped fibre laser and amplifier system providing over 20 W of average output power at 1994 nm
Autorzy:
Grześ, P.
Michalska, M.
Świderski, J.
Powiązania:
https://bibliotekanauki.pl/articles/220559.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
pulsed fibre lasers and amplifiers
mid-infrared
mode-locked lasers
thulium-doped fibres
Opis:
A mode-locked Tm3+-doped fibre laser and amplifier operating at a central wavelength of 1994.3 nm is demonstrated. A thulium oscillator is passively mode-locked by a semiconductor saturable absorber mirror to generate an average power of 17 mW at a fundamental repetition rate of 81 MHz in a short linear cavity. This 2-μm laser train is amplified to an average power to 20.26 W by two double-clad thulium-doped all-fibre amplifiers. The pulse energy, duration and peak power is 250 nJ, 23 ps and 9.57 kW, respectively. This represents one of the highest values of average power at ~2-μm-wavelength for picosecond thulium-doped fibre lasers and amplifiers. The performance of the laser system is described in details.
Źródło:
Metrology and Measurement Systems; 2018, 25, 4; 649-658
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Układ do pomiaru zespolonego tłumienia napięcia współbieżnego (CMRR) wzmacniaczy operacyjnych
A circuit for measuring the complex common mode rejection ratio (CMRR) of operational amplifiers
Autorzy:
Wiśniewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/152332.pdf
Data publikacji:
2013
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
miernictwo układów scalonych
układy scalone
wzmacniacze operacyjne
integrated circuits
measurements of integrated circuits
operational amplifiers
Opis:
W pracy rozważono zagadnienie precyzyjnego pomiaru, przy prądzie przemiennym i zamkniętej pętli sprzężenia zwrotnego, współczynnika tłumienia napięcia współbieżnego CMRR (z ang.: Common Mode Rejection Ratio) o dużej wartości rzędu 1∙104 ÷ 1∙108 (tj. (80 ÷ 160)dB) scalonych wzmacniaczy operacyjnych. W wyniku dokonanej analizy teoretycznej właściwości metrologicznych układu pomiarowego ustalono związek między mierzonym w układzie stosunkiem napięć zależnym od współczynnika CMRR a innymi parametrami badanego wzmacniacza, w tym zwłaszcza wzmocnieniem napięcia różnicowego, stanowiący podstawę ilościowej oceny błędu metody pomiarowej. Bazując na tych wynikach, zaproponowano całkowicie nowe techniczne rozwiązanie układu pomiarowego wyposażonego w specjalny transformator pomiarowy napięcia przemiennego z wtórnymi uzwojeniami o nawoju trifilarnym, co przyczyniło się do wyeliminowania wpływu skończonej wartości wzmocnienia różnicowego badanego wzmacniacza operacyjnego na mierzoną wartość współczynnika CMRR. Zastosowana metoda synchronicznej (fazoczułej, homodynowej) detekcji napięcia przemiennego pozwala na pomiar zarówno stałoprądowej wartości tego współczynnika (CMRR0), jak i trzydecybelowej częstotliwości załamania jego modułu (ƒ0,CMRR). Ponadto przyczynia się do wyeliminowania wpływu zarówno temperaturowych, jak i czasowych, dryftów stałoprądowych parametrów (napięcie offsetu, prądy polaryzacji, prąd offsetu) badanego wzmacniacza oraz jego własnych szumów (termicznych i strukturalnych), a także zakłóceń zewnętrznych na mierzoną wartość współczynnika CMRR.
This paper deals with the problem of a precise measurement of the common mode rejection ratio (CMRR) coefficient of high value from the range 1∙104 ÷ 1∙108 (i.e. 80dB to 160dB) of integrated operational amplifiers at alternating current and closed-loop feedback There was performed the theoretical analysis of metrological parameters of a measuring circuit. As a result there was established the relationship between the voltage ratio (measured in the system) dependent on the CMRR coefficient and the other parameters of the tested amplifier, in particular the differential voltage gain (Kr) (Eq. (13)). This relationship is the basis of quantitative evaluation of the measurement method error. Based on these results, a completely new technical solution of the measurement circuit equipped with a special measuring voltage transformer (Tr) with the secondary trifilar windings was proposed (Figs. 4 and 5). It caused elimination of the effect of the differential open-loop voltage gain (Kr) finite value of the tested operational amplifier on the measured value of the CMRR coefficient (Fig. 3). The applied method of synchronous (phase sensitive, homodyne) detection of the alternating output voltage Uwy (Figs. 4 and 5) allows measurement of both the direct current (DC) value of this coefficient (CMRR0) and the three-decibel break-down frequency (ƒ0,CMRR) of the absolute value CMRR. Moreover, it contributes to elimination of the influence of temperature and time dependent drift DC parameters (offset voltage, input bias currents, input offset current) of the tested amplifier as well as its own intrinsic noise (thermal and structural) and external disturbances on the measured value of CMRR. There were made measurements of randomly selected amplifiers of the same type LM741 but from different producers in the number of 100 units. As a result a large scattering value of this factor of up to 10000:1 (from 75dB to 155dB) was found. Three-decibel break-down frequency ƒ0,CMRR of the absolute value CMRR took the values from the range: 10Hz ÷ 3kHz. The measurement results confirmed the hypothesis posed by the author in the second section of the work that the CMRR coefficient has an indefinite sign. The advantage of the proposed by the author measurement circuit is its technical simplicity, easy reproducibility and low price. For these reasons, it may have wide practical application.
Źródło:
Pomiary Automatyka Kontrola; 2013, R. 59, nr 1, 1; 9-15
0032-4140
Pojawia się w:
Pomiary Automatyka Kontrola
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quadrature Mapping, Saleh’s Representation, and Memory Models
Autorzy:
Borys, A.
Powiązania:
https://bibliotekanauki.pl/articles/226495.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
AM/AM conversions
AM/PM conversions
quadrature model
Saleh's representation
power amplifiers
Volterra series
memory effect
Opis:
In the literature, Saleh’s description of the AM/AM and AM/PM conversions occurring in communication power amplifiers (PAs) is classified as a representation without memory. We show here that this view must be revised. The need for such revision follows from the fact that the Saleh’s representation is based on the quadrature mapping which, as we show here, can be expanded in a Volterra series different from an usual Taylor series. That is the resulting Volterra series possesses the nonlinear impulse responses in form of sums of ordinary functions and multidimensional Dirac impulses multiplied by coefficients being real numbers. This property can be also expressed, equivalently, by saying that the nonlinear transfer functions associated with the aforementioned Volterra series are complex-valued functions. In conclusion, the above means that the Saleh’s representation incorporates memory effects.
Źródło:
International Journal of Electronics and Telecommunications; 2016, 62, 4; 389-394
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RoFnet - Reconfigurable Radio over Fiber Network Architecture Overview
Autorzy:
Medeiros, M.
Avó, R.
Laurencio, P.
Correia, N.
Barradas, A.
Powiązania:
https://bibliotekanauki.pl/articles/308954.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
optical access networks
optical single sideband
radio over fiber
reflective semiconductor optical amplifiers
wavelength division multiplexing
Opis:
This paper introduces the basic operational concepts of the RoFnet - reconfigurable radio over fiber network, which is a project supported by the Portuguese Foundation forScience and Technology. This project proposes an innovative radio over fiber optical access network architecture, which combines a low cost base station (BS) design, incorporating reflective semiconductor optical amplifiers, with fiber dispersion mitigation provided by optical single sideband modulation techniques. Optical wavelength division multiplexing (WDM) techniques are used to simplify the access network architecture allowing for different BSs to be fed by a common fiber. Different wavelength channels can be allocated to different BSs depending on user requirements. Additionally, in order to improve radio coverage within a cell, it is considered a sectorized antenna interface. The combination of subcarrier multiplexing with WDM, further simplifies the network architecture, by using a specific wavelength channel to feed an individual BS and different subcarriers to drive the individual antenna sectors within the BS.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 1; 38-43
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Generalization of Linear Rosenstark Method of Feedback Amplifier Analysis to Nonlinear One
Autorzy:
Borys, A.
Zakrzewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/226780.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
weakly nonlinear amplifiers
nonlinear Rosenstark model
nonlinear distortion analysis
harmonic distortion
constitutive equations
Volterra series
Opis:
Generalization of Linear Rosenstark Method of Feedback Amplifier Analysis to Nonlinear One This paper deals with an extension of the Rosenstark’s linear model of an amplifier to a nonlinear one for the purpose of performing nonlinear distortion analysis. Contrary to an approach using phasors, our method uses the Volterra series. Relying upon the linear model mentioned above, we define first a set of the so-called amplifier’s constitutive equations in an operator form. Then, we expand operators using the Volterra series truncated to the first three components. This leads to getting two representations in the time domain, called in-network and input-output type descriptions of an amplifier. Afterwards, both of these representations are transferred into the multi-frequency domains. Their usefulness in calculations of any nonlinear distortion measure as, for example, harmonic, intermodulation, and/or cross-modulation distortion is demonstrated. Moreover, we show that they allow a simple calculation of the so-called nonlinear transfer functions in any topology as, for example, of cascade and feedback structures and their combinations occurring in single-, two-, nd three-stage amplifiers. Examples of such calculations are given. Finally in this paper, we comment on usage of such notions as nonlinear signals, intermodulation nonlinearity, and on identification of transfer function poles and zeros lying on the frequency axis with related real-valued frequencies.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 1; 48-60
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
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