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    Wyświetlanie 1-7 z 7
    Tytuł:
    Effect of molarity on the structural and optical properties of ZnO thin films deposit by CSP
    Autorzy:
    Habubi, Nadir F.
    Abood, Ziad M.
    Algamel, Ahmed N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193915.pdf
    Data publikacji:
    2015
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Urbach energy
    ZnO
    ZnO thin films
    optical properties
    structural properties
    Opis:
    ZnO thin films have been prepared by chemical spray pyrolysis technique CSP). XRD pattern reveals that the preferred orientation was varied with concentration, topography analysis was done by AFM micrograph which confirm the existence of nonstructural films. The optical properties was done by recorded the transmittane and absorbance which were affected by an increase in concentration. The values of optical energy gap obtained from Tauc relation were 3.17, 3.18 and 3.19 eV for 0.05, 0.1 and 0.5 M respectively. Urbach energy confirms the decrease in band tail as the concentration increase.
    Źródło:
    World Scientific News; 2015, 22; 55-69
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films
    Autorzy:
    Najim, J. A.
    Rozaiq, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/412167.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    ZnO thin films
    semiconductor doping
    optical properties
    structure properties
    Opis:
    ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 μm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 10, 2; 137-150
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
    Autorzy:
    Sypniewska, Małgorzata
    Szczesny, Robert
    Popielarski, Paweł
    Strzałkowski, Karol
    Derkowska-Zielinska, Beata
    Powiązania:
    https://bibliotekanauki.pl/articles/1818231.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    FTIR and Raman spectroscopies
    photoluminescence
    SEM
    XRD
    ZnO thin films
    Opis:
    ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
    Źródło:
    Opto-Electronics Review; 2020, 28, 4; 182--190
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
    Autorzy:
    Sypniewska, Małgorzata
    Szczesny, Robert
    Popielarski, Paweł
    Strzalkowski, Karol
    Derkowska-Zielinska, Beata
    Powiązania:
    https://bibliotekanauki.pl/articles/1818237.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    FTIR and Raman spectroscopies
    photoluminescence
    SEM
    XRD
    ZnO thin films
    Opis:
    ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
    Źródło:
    Opto-Electronics Review; 2020, 28, 4; 182--190
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering
    Autorzy:
    Baseer Haider, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032562.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    thin films
    wide bandgap semiconductors
    ZnO
    magnetron sputtering
    Opis:
    ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work in harsh environment. We have grown ZnO thin films at different temperatures ranging from 100°C to 500°C. We have observed that surface roughness is first decreased with the increase in the growth temperature but then by further increasing the growth temperature beyond 300°C, results in increased surface roughness of the grown samples, whereas grain size of the samples increases with the increase in the growth temperature. Crystalline quality of the films is also improved with the increase in the growth temperature but then degrades by further increase beyond 200°C. We achieved the highest Hall mobility for the ZnO sample grown at 200°C. The optimum growth condition of ZnO thin films on sapphire (0001) in our RF/DC magnetron-sputtering unit were achieved for the films grown at 200°C. Subsequently, we performed pre-growth treatment to the sapphire substrate then grew ZnO films at 200°C. Pre-growth treatment involved heating the substrate at 500°C for about half an hour and then etching the sapphire surface with nitrogen plasma. We have observed that pre-growth heating and nitridation of the sapphire substrate results in bigger grain size whereas no improvement was observed in the crystallinity of the film.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1325-1328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structured Analysis of Nanostructured Zinc Oxide (ZnO) Thin Films Deposited by Sol-Gel
    Autorzy:
    Hussin, Rosniza
    Hanafi, F.
    Rashid, R. A.
    Harun, Z.
    Kamdi, Z.
    Ibrahim, S. A.
    Ainuddin, A. R.
    Rahman, W.
    Leman, A. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2134100.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    sol-gel
    zinc oxide
    ZnO
    thin films
    nanostructured
    Opis:
    In this work, zinc oxide (ZnO) thin films are deposited on glass substrate using the sol-gel spin coating technique. The effect of annealing temperature on structural properties was investigated. The ZnO sol-gel was produced from zinc acetate dehydrate as the starting material with iso-propanol alcohol as the stabilizer. The ratio was controlled, distilled water and diethanolamine as the solvent mixing on a magnetic stirrer for an hour under constant heat of 60°C. The ZnO thin film was deposited using the spin coating technique with the speed of 3000 rpm for 30 minutes before the sample undergoes pre-heat in the oven at the temperature of 100°C for 10 minutes. The sample was annealing in the furnace for an hour at 200°C, 350°C, and 500°C. The X-ray diffraction (XRD) analysis confirms that hexagonal wurtzite structure with zincite and zinc acetate hydroxide hydrate composition. The thin films surface roughness was analyzed using an atomic force microscope (AFM) and scanning electron microscope (SEM) for surface morphology observation.
    Źródło:
    Archives of Metallurgy and Materials; 2022, 67, 3; 1055--1060
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The effect of Co and Cu co-doping ZnO thin films on structural and optical properties
    Autorzy:
    Saoud, Tayeb
    Benramache, Said
    Diha, Abdallah
    Powiązania:
    https://bibliotekanauki.pl/articles/31342694.pdf
    Data publikacji:
    2023
    Wydawca:
    Towarzystwo Chemii i Inżynierii Ekologicznej
    Tematy:
    ZnO
    thin films
    Co
    Cu
    co-doping
    TCO
    spray pneumatic method
    cienkie warstwy
    współdomieszkowanie
    Opis:
    Using a spray pneumatic technique, cobalt (Co) and copper (Cu) co-doped zinc oxide thin films were effectively deposited on a glass substrate. The goal of this work was to create a semiconductor with good optical and electrical properties by co-doping ZnO thin films with Cu and Co. The ZnO thin films obtained from the Co and Cu co-doping exhibit patterns of x-ray diffraction spectra that suggest they are hexagonal ZnO (wurtzite, JCPDS 36-1451). The thin film elaborated with 2 % Co and 7 % Cu has the lowest value of crystallite size (D = 14.67 nm). The transmission spectra demonstrate that all films have good optical transparency in the visible spectrum, with 7 % Cu achieving the highest transmission. Increasing Cu contents raised the band gap energy. The value at the minimum was 3.31 eV. The optical band gap’s broadening is a significant characteristic of advanced materials and may be useful in applications involving metal oxide nanostructures for visible light gas sensing.
    Źródło:
    Chemistry-Didactics-Ecology-Metrology; 2023, 28, 1-2; 171-178
    2084-4506
    Pojawia się w:
    Chemistry-Didactics-Ecology-Metrology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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