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Wyszukujesz frazę "ZnO/Si" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics
Autorzy:
Bogaczewicz, Rafał Antoni
Popko, Ewa
Gwóźdź, Katarzyna Renata
Powiązania:
https://bibliotekanauki.pl/articles/1835761.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
simulation
semiconductor
heterojunction
band diagram
n-ZnO/p-Si
Opis:
Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.
Źródło:
Optica Applicata; 2021, 51, 1; 135-145
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Higher Solar Cell Efficiency Achieved with ZnO/Si heterojuction
Autorzy:
Ayad, jumaah kadhim
Muneer, H. Jaduaa Alzubaidy
Abd, Ahmed N.
Powiązania:
https://bibliotekanauki.pl/articles/1161880.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
AFM
XRD
ZnO/Si
chemical method
conversation efficiency
solar cell
Opis:
In this work, the zinc oxide nanoparticles were prepared chemically and deposited by casting style on glass bases and treated thermally at a temperature of 600 °C. The study focused on Optical and structural properties of thin films. An optical advantages of Zinc Oxide (ZnO) were characterized by using ultraviolet visible Spectroscopy. And the structure by using X-Ray Diffraction and (AFM). The optical advantages of thin films were studied by recording the transmittance spectra of wavelengths range (300-900 nm). The energy gap was calculated using tauc equation and is found (3 eV). I-V properties of the solar cell under light at 40 mW/cm2 flounce was investigated. The open circuit Voltage (Voc) was 33 and Short-circuit density (Isc) was 0.017 mA. This measurements show that the fill factor (F.F) and conversation efficiency (η), were 55% and 9.9% respectively.
Źródło:
World Scientific News; 2018, 112; 226-234
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications
Autorzy:
Gwóźdź, K.
Płaczek-Popko, E.
Gumienny, Z.
Zielony, E.
Pietruszka, R.
Witkowski, B. S.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Chang, L. B.
Powiązania:
https://bibliotekanauki.pl/articles/201432.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
solar cells
ZnO
Si
heterojunction
nanorods
nanoparticles
ogniwa słoneczne
nanopręty
nanocząstki
Opis:
Our studies focus on test structures for photovoltaic applications based on zinc oxide nanorods grown using a low-temperature hydrothermal method on a p-type silicon substrate. The nanorods were covered with silver nanoparticles of two diameters – 20–30 nm and 50–60 nm – using a sputtering method. Scanning electron microscopy (SEM) micrographs showed that the deposited nanoparticles had the same diameters. The densities of the nanorods were obtained by means of atomic force microscope (AFM) images. SEM images and Raman spectroscopy confirmed the hexagonal wurtzite structure of the nanorods. Photoluminescence measurements proved the good quality of the samples. Afterwards an atomic layer deposition (ALD) method was used to grow ZnO:Al (AZO) layer on top of the nanorods as a transparent electrode and ohmic Au contacts were deposited onto the silicon substrate. For the solar cells prepared in that manner the current-voltage (I-V) characteristics before and after the illumination were measured and their basic performance parameters were determined. It was found that the spectral characteristics of a quantum efficiency exhibit an increase for short wavelengths and this behavior has been linked with the plasmonic effect.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 529-533
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of ZnO/p-Si Heterojunction Solar Cell
Autorzy:
Habubi, Nadir F.
Mousa, Abdulazeez O.
Powiązania:
https://bibliotekanauki.pl/articles/1193961.pdf
Data publikacji:
2015
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
chemical spray pyrolysis
heterojunction solar cell
n-ZnO/p-Si
Opis:
Zinc oxide thin films was deposited by chemical spray pyrolysis (CSP) at 400 °C substrate temperature and different thickness (60, 80, and 100) nm on the texturized p-Si wafer to fabricate ZnO/p-Si heterojunction solar cell. Structural, optical, electrical and photovoltaic properties are investigated for the samples. XRD analysis reveals that all the as deposited ZnO films show polycrystalline structure, without any change due to increase of thickness. Average diameter calculated from AFM images shows an increase in its value with increasing thickness, ranging from 59.82-95.7 nm. The optical reflections for samples are measured using UV-Vis spectrophotometer. Photoluminescence (PL) spectra of (CSP) grown ZnO/p-Si with different thickness were used to study the energy gap. The electrical properties of heterojunction were obtained by I-V (dark and illuminated) and C-V measurement. I-V characteristic of the ZnO/p-Si heterojunction shows good rectifying behavior under dark condition. The ideality factor and the saturation current density was calculated. Under illuminated the photovoltaic measurements (open-circuit voltage (Voc), short-circuit current density (JSC), fill factor (FF), and quantum efficiencies are calculated for all samples. The built- in potential (Vbi), carrier concentration and depletion width are determined under different thickness from C-V measurement.
Źródło:
World Scientific News; 2015, 18; 78-92
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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