Temat: ZMR - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High-temperature instability processes in SOI structures and MOSFETs
Autorzy:: Nazarov, A.N.
Kilchytska, V.I.
Vovk, Ja.N.
Colinge, J.P.
Powiązania:: https://bibliotekanauki.pl/articles/307654.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
MOSFET
high-temperature
instability
ZMR
SIMOX
Opis:: The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 18-26
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors
Autorzy:: Druzhinin, A.
Lavitska, E.
Maryamova, I.
Kogut, I.
Khoverko, Y.
Powiązania:: https://bibliotekanauki.pl/articles/307642.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
mechanical sensors
poly-Si piezoresistor
ZMR
Opis:: The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 40-45
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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