Temat: WDM systems - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Power penalty caused by Stimulated Raman Scattering in WDM Systems
Autorzy:: Pietrzyk, S.
Szczęsny, W.
Marciniak, M.
Powiązania:: https://bibliotekanauki.pl/articles/308751.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: optical communications
WDM systems
Stimulated Raman Scattering
Opis:: In this paper we present results of an investigation into the power penalty introduced by Stimulated Raman Scattering (SRS) in WDM systems with concentration on application of dispersion-shifted single-mode optical fibres (G.653) and unequal channel allocation schemes. System parameters based on ITU-T Recommendation G.692 and analytic formulas were used in calculations. It is shown that SRS does present a practical limitation to the multichannel systems. We also indicate limitations of the G.692 Recommendation and we point at directions of study in the area of nonlinear phenomena and multichannel systems.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 1-2; 52-58
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Impact of nonlinear optical phenomena on dense wavelength division multiplexed transmission in fibre telecommunication systems
Autorzy:: Szczęsny, W.
Marciniak, M.
Powiązania:: https://bibliotekanauki.pl/articles/308745.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: optical communications
WDM systems
nonlinear transmission
Opis:: In the paper results of analysis of nonlinear phenomena in optical fibres: Self-Phase Modulation, Cross-Phase Modulation, Four-Wave Mixing and Stimulated Raman Scattering and their influence on Dense-Wavelength Division Multiplexed system performance are reported. Different nonuniform optical channel allocation schemes based on ITU Recommendation G.692 100 GHz frequency grid are compared with uniform channel distribution. The level of nonlinear cross-talk is determined for different levels of the total optical power. As an example a 10 Gbit/s D-WDM dispersion-shifted single mode fibre link with dispersion-compensating fibres is envisaged. The directions for optimization of the system design in view of actual international standardization trends are pointed out.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 1-2; 61-65
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Compact Transverse Electric Silicon-on-Insulator Mode Converter for Mode-Division Multiplexer
Autorzy:: Sharaf, Mohamed H.
El-Mashade, Mohamed B.
Emran, Ahmed A.
Powiązania:: https://bibliotekanauki.pl/articles/2055263.pdf
Data publikacji:: 2022
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: integrated optics
silicon-on-insulator waveguide
WDM & MDM systems
perturbation theory
integrated optical
devices
hybrid modes
guided waves
Opis:: On-chip optical-interconnect technology emerges as an attractive approach due to its ultra-large bandwidth and ultra-low power consumption. Silicon-on-insulator (SOI) wire waveguides, on the other hand, have been identified to potentially replace copper wires for intra-chip communication. To take advantage of the wide bandwidth of SOI waveguides, wavelengthdivision multiplexing (WDM) has been implemented. However, WDM have inherent drawbacks. Mode-division multiplexing (MDM) is a viable alternative to WDM in MIMO photonic circuits on SOI as it requires only one carrier wavelength to operate. In this vein, mode converters are key components in on-chip MDM systems. The goal of this paper is to introduce a transverse electric mode converter. The suggested device can convert fundamental transverse electric modes to first-order transverse electric ones and vice versa. It is based on small material perturbation which introduces gradual coupling between different modes. This device is very simple and highly compact; the size of which is 3 μm². Mathematical expressions for both the insertion loss and crosstalk are derived and optimized for best performance. In addition, three-dimensional finite-difference time-domain (3D-FDTD) simulations are performed in order to verify the mathematical model of the device. Our numerical results reveal that the proposed device has an insertion loss of 1.2 dB and a crosstalk of 10.1 dB. The device’s insertion loss can be decreased to 0.95 dB by adding tapers to its material perturbation.
Źródło:: International Journal of Electronics and Telecommunications; 2022, 68, 2; 275--280
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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