Temat: SiGe HBT - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Critical modeling issues of SiGe semiconductor devices
Autorzy:: Palankovski, V.
Selberherr, S.
Powiązania:: https://bibliotekanauki.pl/articles/308035.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe HBT
numerical simulation
band gap
mobility
small-signal simulation
S-parameters
Opis:: We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 15-25
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: CVD growth of high speed SiGe HBTs using SiH4
Autorzy:: Radamson, H.H.
Grahn, J.
Landgren, G.
Powiązania:: https://bibliotekanauki.pl/articles/309308.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
epitaxy
HBT
silane
Opis:: The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 10-14
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Silicon-germanium for ULSI
Autorzy:: Hall, S.
Eccleston, B.
Powiązania:: https://bibliotekanauki.pl/articles/309304.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon-germanium
HBT
SiGe-CMOS
Opis:: The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 3-9
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: SiGe HBT wideband amplifier for millimeter wave applications
Autorzy:: Krcmar, M.
Noether, N.
Boeck, G.
Powiązania:: https://bibliotekanauki.pl/articles/307582.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: wideband amplifier
HBT
SiGe
millimeter wave
bipolar integrated circuits
Opis:: A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 1; 8-12
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator
Autorzy:: Linkowski, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308023.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: base transit time
cut-off frequency
HBT
SiGe-base
Opis:: The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 36-38
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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