Temat: SiGe - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: SiGe field effect transistors - performance and applications
Autorzy:: Whall, T.E.
Parker, E.H.C.
Powiązania:: https://bibliotekanauki.pl/articles/307664.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
FETs
epitaxy
circuits
Opis:: Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 3-11
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Silicon-germanium for ULSI
Autorzy:: Hall, S.
Eccleston, B.
Powiązania:: https://bibliotekanauki.pl/articles/309304.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon-germanium
HBT
SiGe-CMOS
Opis:: The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 3-9
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Silicon microelectronics: where we have come from and where we are heading
Autorzy:: Łukasiak, L.
Jakubowski, A.
Pióro, Z.
Powiązania:: https://bibliotekanauki.pl/articles/308029.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOSFET
scaling
SiGe
SOI
Opis:: The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 7-14
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: CVD growth of high speed SiGe HBTs using SiH4
Autorzy:: Radamson, H.H.
Grahn, J.
Landgren, G.
Powiązania:: https://bibliotekanauki.pl/articles/309308.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
epitaxy
HBT
silane
Opis:: The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 10-14
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Nanohills in SiGe/Si structure formed by laser radiation
Autorzy:: Medvid', A.
Onufrijev, P.
Lyutovich, K.
Oehme, M.
Kasper, E.
Dmitruk, I.
Pundyk, I.
Manak, I.
Grabovskis, D.
Powiązania:: https://bibliotekanauki.pl/articles/384291.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: nanohills
SiGe
laser
hetero-epitaxial structure
Opis:: Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2. The giant "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm-1 Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 62-64
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
Autorzy:: Zaręba, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308625.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: heterojunction bipolar transistor
SiGe
base width modulation
Opis:: A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 88-92
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: SiGe HBT wideband amplifier for millimeter wave applications
Autorzy:: Krcmar, M.
Noether, N.
Boeck, G.
Powiązania:: https://bibliotekanauki.pl/articles/307582.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: wideband amplifier
HBT
SiGe
millimeter wave
bipolar integrated circuits
Opis:: A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 1; 8-12
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator
Autorzy:: Linkowski, A.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308023.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: base transit time
cut-off frequency
HBT
SiGe-base
Opis:: The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 36-38
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Critical modeling issues of SiGe semiconductor devices
Autorzy:: Palankovski, V.
Selberherr, S.
Powiązania:: https://bibliotekanauki.pl/articles/308035.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe HBT
numerical simulation
band gap
mobility
small-signal simulation
S-parameters
Opis:: We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 15-25
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:: Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:: https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:: Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 11.

Tytuł:: Process and device requirements for mixed-signal integrated circuits in broadband networking
Autorzy:: Iniewski, K.
Syrzycki, M.
Voinigescu, S.P.
Powiązania:: https://bibliotekanauki.pl/articles/308043.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: CMOS
SiGe
InP
networking
WAN
MAN
SAN
LAN
OEO conversion
cut-off frequency
manufacturability
Opis:: The paper describes the present status of the broadband wireline infrastructure consisting of the backbone core, metre rings, access network, local and storage area networks. Examples of various mixed-signal integrated circuits are described. Based on these considerations required process and device performance is extrapolated.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 90-98
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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