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    Wyświetlanie 1-3 z 3
    Tytuł:
    Effect of Glass-Coated Al Paste on Back-Surface Field Formation in Si Solar Cells
    Autorzy:
    Jeong, Hyeondeok
    Ryu, Sung-Soo
    Powiązania:
    https://bibliotekanauki.pl/articles/354208.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Si solar cell
    Al paste
    glass coating
    Al back contact
    back surface field
    Opis:
    In this study, glass frit was coated uniformly on the surface of Al particles instead of adding glass frit to Al powder by simple mixing to form a nano-layer. The influence of the glass-frit coating on the formation of the back-surface field and electrical characteristics of the resulting Al electrode were investigated. Microstructural observations indicated that the glass components were uniformly distributed and the back-surface field layer thickness was more uniform compared to the simply mixed sample. Inaddition, the sheet resistance was ˂10 mΩ/□, much lower than the 23 mΩ/□ of the simply mixed Al electrode.
    Źródło:
    Archives of Metallurgy and Materials; 2020, 65, 3; 989-992
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of ZnO/p-Si Heterojunction Solar Cell
    Autorzy:
    Habubi, Nadir F.
    Mousa, Abdulazeez O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193961.pdf
    Data publikacji:
    2015
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    chemical spray pyrolysis
    heterojunction solar cell
    n-ZnO/p-Si
    Opis:
    Zinc oxide thin films was deposited by chemical spray pyrolysis (CSP) at 400 °C substrate temperature and different thickness (60, 80, and 100) nm on the texturized p-Si wafer to fabricate ZnO/p-Si heterojunction solar cell. Structural, optical, electrical and photovoltaic properties are investigated for the samples. XRD analysis reveals that all the as deposited ZnO films show polycrystalline structure, without any change due to increase of thickness. Average diameter calculated from AFM images shows an increase in its value with increasing thickness, ranging from 59.82-95.7 nm. The optical reflections for samples are measured using UV-Vis spectrophotometer. Photoluminescence (PL) spectra of (CSP) grown ZnO/p-Si with different thickness were used to study the energy gap. The electrical properties of heterojunction were obtained by I-V (dark and illuminated) and C-V measurement. I-V characteristic of the ZnO/p-Si heterojunction shows good rectifying behavior under dark condition. The ideality factor and the saturation current density was calculated. Under illuminated the photovoltaic measurements (open-circuit voltage (Voc), short-circuit current density (JSC), fill factor (FF), and quantum efficiencies are calculated for all samples. The built- in potential (Vbi), carrier concentration and depletion width are determined under different thickness from C-V measurement.
    Źródło:
    World Scientific News; 2015, 18; 78-92
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Higher Solar Cell Efficiency Achieved with ZnO/Si heterojuction
    Autorzy:
    Ayad, jumaah kadhim
    Muneer, H. Jaduaa Alzubaidy
    Abd, Ahmed N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1161880.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AFM
    XRD
    ZnO/Si
    chemical method
    conversation efficiency
    solar cell
    Opis:
    In this work, the zinc oxide nanoparticles were prepared chemically and deposited by casting style on glass bases and treated thermally at a temperature of 600 °C. The study focused on Optical and structural properties of thin films. An optical advantages of Zinc Oxide (ZnO) were characterized by using ultraviolet visible Spectroscopy. And the structure by using X-Ray Diffraction and (AFM). The optical advantages of thin films were studied by recording the transmittance spectra of wavelengths range (300-900 nm). The energy gap was calculated using tauc equation and is found (3 eV). I-V properties of the solar cell under light at 40 mW/cm2 flounce was investigated. The open circuit Voltage (Voc) was 33 and Short-circuit density (Isc) was 0.017 mA. This measurements show that the fill factor (F.F) and conversation efficiency (η), were 55% and 9.9% respectively.
    Źródło:
    World Scientific News; 2018, 112; 226-234
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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