Temat: RF model - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Automated parameter extraction of geometry dependent RF planar inductor model
Autorzy:: Durev, V. P.
Gadjeva, E. D.
Hristov, M. H.
Powiązania:: https://bibliotekanauki.pl/articles/397835.pdf
Data publikacji:: 2010
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: spiralne płaskie induktory
model RF
parametr ekstrakcji
S-parametry
genetyczny algorytm
planar spiral inductors
RF model
parameter extraction
S-parameters
genetic algorithm
Opis:: An approach is proposed in the present paper to parameter extraction of geometry dependent RF planar spiral inductor model. A direct extraction procedure is developed and realized in the Cadence PSpice and Cadence Probe environment based on the measured two-port S-parameters. To minimize the error for the full range of operation a Genetic Algorithm (GA) optimization procedure is applied in MATLAB environment. The approach is useful in RF model design, as the S-parameters can be easily measured for a given microelectronic technology. The proposed model extraction approach is characterized by a very good accuracy.
Źródło:: International Journal of Microelectronics and Computer Science; 2010, 1, 3; 257-262
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Advanced compact modeling of the deep submicron technologies
Autorzy:: Grabiński, W.
Bucher, M.
Sallese, J.-M.
Krummenacher, F.
Powiązania:: https://bibliotekanauki.pl/articles/309312.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultra deep submicron (UDSM) technology
compact modeling
EKV MOS transistor model
MOSFET
matching
low power
RF applications
Opis:: The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 žm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 31-42
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Influence of multi-tine electrode configuration in realistic hepatic RF ablative heating
Autorzy:: Gas, Piotr
Wyszkowska, Joanna
Powiązania:: https://bibliotekanauki.pl/articles/141022.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: percutaneous RF ablation
multi-tine electrode
tumor heating techniques
Arrhenius thermal damaged model
hepatocellular carcinoma
finite element method
Opis:: Percutaneous RF ablation is one of alternative treatment for non-surgical liver tumors. Ablative changes in hepatic tissue can be successfully estimated using the finite element method. The authors created a 3D model of a multi-tine applicator immersed in liver tissue, and then determined the optimal values of voltage applied to such an RF electrode, which do not exceed the therapeutic temperature range valid during thermal ablation procedure. Importantly, the simulations were carried out for the RF electric probes with 2 to 5 evenly spaced arms. Additionally, the thermal damage of hepatic tissue for multi-armed applicators working at pre-defined limit values of voltages was established based on the Arrhenius model.
Źródło:: Archives of Electrical Engineering; 2019, 68, 3; 521-533
1427-4221
2300-2506
Pojawia się w:: Archives of Electrical Engineering
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: An accurate prediction of high-frequency circuit behaviour
Autorzy:: Yoshitomi, S.
Kimijima, H.
Kojima, K.
Kokatsu, H.
Powiązania:: https://bibliotekanauki.pl/articles/308807.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electro-magnetic simulation
SPICE
circuit test structure
RF CMOS
EKV2.6-MOS model
spiral inductor
CMOS VCO
Opis:: An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 47-62
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "RF model" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język