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Wyszukujesz frazę "RF devices" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Qucs equation-defined and Verilog-A higher order behavioral device models for harmonic balance circuit simulation
Autorzy:
Brinson, M.
Kuznetsov, V.
Powiązania:
https://bibliotekanauki.pl/articles/397905.pdf
Data publikacji:
2015
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
Qucs
Xyce
Harmonic Balance RF simulation
compact semiconductor device modelling
equation-defined devices
macromodel
modelowanie urządzeń elektronicznych
makromodele
Opis:
This paper is concerned with the development and evaluation of a number of modeling techniques which improve Qucs Harmonic Balance simulation performance of RF compact device models. Although Qucs supports conventional SPICE semiconductor device models, whose static current/voltage and dynamic charge characteristics exhibit second and higher order derivatives may not be continuous, there is no guarantee that these will function without Harmonic Balance simulation convergence problems. The same comment also applies to a number of legacy compact semiconductor device models. The modeling of semiconductor devices centered on non-linear Equation-Defined Devices and blocks of Verilog-A code, combined with linear components, is introduced. These form a class of compact macromodel that has improved Harmonic Balance simulation performance. To illustrate the presented modeling techniques RF diode, BJT and MESFET macromodels are described and their Harmonic Balance performance simulated with Qucs and Xyce©.
Źródło:
International Journal of Microelectronics and Computer Science; 2015, 6, 2; 49-58
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implant Safety Tool Application to Assist the Assessment of Radio-Frequency Radiation Exposure
Autorzy:
Gas, Piotr
Miaskowski, Arkadiusz
Powiązania:
https://bibliotekanauki.pl/articles/124187.pdf
Data publikacji:
2019
Wydawca:
Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:
Implant Safety Tool
pectus excavatum
metal implants
Nuss procedure
MRI devices
plane wave
FDTD method
RF exposure standards
Opis:
This paper discusses a new Implant Safety Tool, used to assess the safety of patients with metal implants exposed to radio-frequency (RF) fields. This specialist tool is discussed on the example of pectus patients with titanium bar-implant inserted during the minimally invasive Nuss procedure. The authors created a 3D realistic model of a 34-year-old male patient with a Nuss bar-implant. A numerical analysis based on the finite-difference time-domain (FDTD) method was performed for a far field source in the form of a plane wave with the frequency of 64 MHz, which corresponds to the RF exposure generated by MRI devices at 1.5 T. The obtained results allow concluding that the concave Nuss bar-implant poses no risk during environmental and occupational RF field exposures.
Źródło:
Journal of Ecological Engineering; 2019, 20, 10; 24-33
2299-8993
Pojawia się w:
Journal of Ecological Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution and recent advances in RF/microwave transistors
Autorzy:
Liou, J.J.
Schwierz, F.
Powiązania:
https://bibliotekanauki.pl/articles/308200.pdf
Data publikacji:
2004
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
microwave devices
RF devices
heterostructures
HEMT
HBT
frequency limits
RF CMOS
Opis:
Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Źródło:
Journal of Telecommunications and Information Technology; 2004, 1; 99-105
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
27 dBm Microwave Amplifiers with Adaptive Matching Networks
Autorzy:
Rosolowski, D.
Wojtasiak, W.
Gryglewski, D.
Powiązania:
https://bibliotekanauki.pl/articles/226524.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Adaptive Power Amplifiers (APAs)
components for Software Defined Radio
multi-band devices
multi-mode devices
RF
adaptivity
tunable matching networks
Opis:
The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
Źródło:
International Journal of Electronics and Telecommunications; 2011, 57, 1; 103-108
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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