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Wyszukujesz frazę "RF CMOS" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Evolution and recent advances in RF/microwave transistors
Autorzy:
Liou, J.J.
Schwierz, F.
Powiązania:
https://bibliotekanauki.pl/articles/308200.pdf
Data publikacji:
2004
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
microwave devices
RF devices
heterostructures
HEMT
HBT
frequency limits
RF CMOS
Opis:
Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Źródło:
Journal of Telecommunications and Information Technology; 2004, 1; 99-105
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An accurate prediction of high-frequency circuit behaviour
Autorzy:
Yoshitomi, S.
Kimijima, H.
Kojima, K.
Kokatsu, H.
Powiązania:
https://bibliotekanauki.pl/articles/308807.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
electro-magnetic simulation
SPICE
circuit test structure
RF CMOS
EKV2.6-MOS model
spiral inductor
CMOS VCO
Opis:
An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 47-62
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Co-design of a low-power RF receiver and piezoelectric energy harvesting power supply for a Wireless Sensor Node
Autorzy:
Mancelos, N
Correia, J
Oliveira, J. P.
Oliveira, L. B.
Powiązania:
https://bibliotekanauki.pl/articles/398018.pdf
Data publikacji:
2014
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
CMOS RF analog front-end
low-voltage wideband balun LNA
passive mixer
piezoelectric energy harvesting
active full bridge rectifier
LDO regulator
układ analogowy CMOS
balun szerokopasmowy
mikser pasywny
energia piezoelektryczna
prostownik aktywny
prostownik mostkowy
regulator LDO
Opis:
A low-voltage RF CMOS receiver front-end and an energy harvesting power circuit for a piezoelectric source are presented as a co-designed solution for a Wireless Sensor Node. A MOSFET-only Wideband balun LNA with noise cancelling and a 0.6 V supply voltage is designed in conjunction with a passive mixer. The passive mixer operates in current mode, allowing a minimal introduction of voltage noise and a good linearity. The receiver front-end reaches a total voltage conversion gain of 31 dB, a 0.1-5.2 GHZ bandwidth, an IIP3 value of -1.35 dBm, and a noise figure inferior to 9 dB. The total power consumption is 1.95 mW. The energy harvesting power circuit consists of an active full bridge cross-coupled rectifier followed by a low-dropout (LDO) regulator, and it is able to guarantee a power output of 6 mW with a regulated output voltage of 0.6 V, for typical vibration patterns.
Źródło:
International Journal of Microelectronics and Computer Science; 2014, 5, 4; 136-143
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fully Analytical Characterization of the Series Inductance of Tapered Integrated Inductors
Autorzy:
Passos, F.
Fino, M. H.
Moreno, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/226450.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
inductor design
variable width integrated spiral inductor
integrated spiral inductor
CMOS analog circuits
IC designing
RF IC design
Opis:
In this paper a general method for the determination of the series inductance of polygonal tapered inductor s is presented. The value obtained can be integrated into any integrated inductor lumped element model, thus granting the overall characterization of the device and the evaluation of performance parameters such as the quality factor or the resonance frequency. In this work, the inductor is divided into several segments and the corresponding self and mutual inductances are calculated. In the end, results obtained for several working examples are compared against electromagnetic (EM) simulations are performed in order to check the validity of the model for square, hexagonal, octagonal and tapered inductors. The proposed method depends exclusively on the geometric characteristics of the inductor as well as the technological parameters. This allows its straight forward application to any inductor shape or technology.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 1; 73-77
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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