- Tytuł:
- Gate dielectrics: process integration issues and electrical properties
- Autorzy:
- Schwalke, U.
- Powiązania:
- https://bibliotekanauki.pl/articles/308978.pdf
- Data publikacji:
- 2005
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
high-k dielectrics
CMOS
Pr2O3
process integration
resist removal
wet chemical cleaning
wet chemical etching
RIE - Opis:
- In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2005, 1; 7-10
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł