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Wyświetlanie 1-4 z 4
Tytuł:
Frequency Reconfigurable Split Ring Antenna for LTE And WiMAX Applications
Autorzy:
Madhav, B. T. P.
Nadh, B.
Anilkumar, T.
Pardhasaradhi, P.
Rao, M. C.
Lakshman, P.
Powiązania:
https://bibliotekanauki.pl/articles/226800.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
PIN diode
WiMAX
LTE 2500
split ring antenna
BAR64-02V
Opis:
This paper presents frequency reconfigurable dual band antenna for WiMAX and LTE 2500 band applications using four PIN diode switches. The antenna is compact in size with dimensions of 30 x 30 x 0.8 mm3 and designed on FR-4 dielectric substrate with a partial ground plane. The fabricated antenna operates in the frequency range of LTE and WiMAX (2.5-2.69 GHz and 3.4-3.6 GHz) respectively. The frequencies can be controlled by using PIN diodes and antenna attained the gain ranging of 3.34-4.46 dBi. This designed antenna resonating at 2.52 and 3.49 GHz when the PIN diodes are in ON state and resonating at 2.68 and 3.58 GHz when PIN diodes are in OFF state. The proposed antenna has bidirectional radiation at upper frequency bands and unidirectional at lower frequency bands. The proposed split ring structured antenna has the radiation efficiency of 94.12% at 2.52 GHz and 90.34% at 3.49 GHz in ON state. Antenna providing good agreement between the measured (Antenna measurement setup with VNA) and simulated results (Ansys-HFSS).
Źródło:
International Journal of Electronics and Telecommunications; 2020, 66, 2; 255-260
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Band Notch Characteristics Reconfigurable UWB Leaf Shape Monopole Antenna
Autorzy:
Muthusamy, Pachiyaannan
Nallapaneni, Srikanta
Perumalla, Krishna Chaitanya
Punna, Bharghava
Powiązania:
https://bibliotekanauki.pl/articles/2055232.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
band notch
PIN diode
leaf shape monopole antenna
reconfigurable
UWB
Opis:
In this paper a band notch characteristics reconfigurable UWB leaf shape monopole antenna is reported. The proposed antenna size is 42×32×1.6 mm³ and simulated S11-10dB impedance bandwidth is from 2.1 to 13.0 GHz. The notch bands are embodied into the designed antenna to suppress Bluetooth and WiFi bands from 2.3-2.7 GHz and 4.6-5.3 GHz. The PIN Diode is loaded to slot on the DGS to achieve notch bands. It has 4.48dB and 1.7dB gain achieved when diode ON and OFF condition. Further, it encompasses a bio-inspired leaf shape patch having high feasibility for deployment in secret and military purposes.
Źródło:
International Journal of Electronics and Telecommunications; 2022, 68, 2; 223--228
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New approach to power semiconductor devices modeling
Autorzy:
Napieralski, A.
Napieralska, M.
Powiązania:
https://bibliotekanauki.pl/articles/308039.pdf
Data publikacji:
2004
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
power device modeling
SPICE
circuit simulation
VDMOS
PIN diode
IGBT
web-based simulation
Opis:
The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
Źródło:
Journal of Telecommunications and Information Technology; 2004, 1; 80-89
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon ions
Autorzy:
Sharma, R. K.
Hazdra, P
Popelka, S.
Powiązania:
https://bibliotekanauki.pl/articles/397767.pdf
Data publikacji:
2015
Wydawca:
Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:
4H-SiC
characterization
JBS diode
PIN diode
simulation
dioda JBS
dioda PIN
symulacje
Opis:
This paper presents the development and application of simulation models for proton and carbon irradiated 4H-SiC junction barrier Schottky (JBS) diodes. Commercial JBS diode chips were irradiated to the identical depth with different doses of hydrogen and carbon ions. The resulting defects were then identified by deep level transient spectroscopy (DLTS). Comprehensive I-V and C-V measurement performed prior to and after ion irradiation was used for calibration of simulation models. Results show that compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. For the first time, the free carrier concentration profile extracted from CV simulations for irradiated JBS diode has been compared with experimental data. The simulation of irradiated JBS diodes exhibit excellent matching with experimental data and can be very useful for the optimization of SiC power devices. Furthermore, it is shown that the developed model can be used for prediction of the effect of ion irradiation on both the static and dynamic characteristic of PiN diode.
Źródło:
International Journal of Microelectronics and Computer Science; 2015, 6, 2; 59-63
2080-8755
2353-9607
Pojawia się w:
International Journal of Microelectronics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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